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To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.solener.2005.02.007 Byline: Zuopeng He, Zhenguo Ji, Shichao Zhao, Chao Wang, Kun Liu, Zhizhen Ye Keywords: Cu.sub.x Ni.sub.1-x O films; Electrochromic; Sol-gel; Dip-coating Abstract: Cu.sub.x Ni.sub.1-x O electrochromic thin films were prepared by sol-gel dip coating and characterized by XRD, UV-vis absorption and electrochromic test. XRD results show that the structure of the Cu.sub.x Ni.sub.1-x O thin films is still in cubic NiO structure. UV-vis absorption spectra show that the absorption edges of the Cu.sub.x Ni.sub.1-x O films can be tuned from 335nm (x =0) to 550nm (x =0.3), and the transmittance of the colored films decrease as the content of Cu increases. Cu.sub.x Ni.sub.1-x O films show good electrochromic behavior, both the coloring and bleaching time for a Cu.sub.0.2Ni.sub.0.8O film were less than 1s, with a variation of transmittance up to 75% at the wavelength of 632.8nm. Author Affiliation: State Key Laboratory for Silicon Materials, Zhejiang University, Hangzhou 310027, China Article History: Received 9 July 2004; Revised 20 December 2004; Accepted 8 February 2005 Article Note: (miscellaneous) Communicated by: Associate Editor Volker Wittwer

[Cu.sub.x][Ni.sub.1-x]O electrochromic thin films were prepared by sol-gel dip coating and characterized by XRD, UV-vis absorption and electrochromic test. XRD results show that the structure of the [Cu.sub.x][Ni.sub.1-x]O thin films is still in cubic NiO structure. UV-vis absorption spectra show that the absorption edges of the [Cu.sub.x][Ni.sub.1-x]O films can be tuned from 335 nm (x = 0) to 550 nm (x = 0.3), and the transmittance of the colored films decrease as the content of Cu increases. [Cu.sub.x][Ni.sub.1-x]O films show good electrochromic behavior, both the coloring and bleaching time for a [Cu.sub.x][Ni.sub.1-x]O film were less than 1 s, with a variation of transmittance up to 75% at the wavelength of 632.8 nm. Keywords: [Cu.sub.x][Ni.sub.1-x]O films; Electrochromic; Sol gel; Dip-coating

The effects of CuO, Li2CO3 and CaTiO3 additives on the densification, microstructure and microwave dielectric properties of CaSiO3–1wt% Al2O3 ceramics for low-temperature co-fired applications were investigated. With a single addition of 1wt% Li2CO3, the CaSiO3–1wt% Al2O3 ceramic required a temperature of at least 975°C to be dense enough. Large amount addition of Li2CO3 into the CaSiO3–1wt% Al2O3 ceramics led to the visible presence of Li2Ca3Si6O16 and Li2Ca4Si4O13 second phases. Fixing the Li2CO3 content at 1wt%, a small amount of CuO addition significantly promoted the sintering process and lowered the densification temperature to 900°C whereas its addition deteriorated the microwave dielectric properties of CaSiO3–1wt% Al2O3 ceramics. Based on 10wt% CaTiO3 compensation in temperature coefficient, good microwave dielectric properties of ε r =8.92, Q×f=19,763GHz and τ f =−1.22ppm/°C could be obtained for the 0.2wt% CuO and 1.5wt% Li2CO3 doped CaSiO3–1wt% Al2O3 ceramics sintered at 900°C. The chemical compatibility of the above ceramics with silver during the cofiring process has also been investigated, and the result showed that there was no chemical reaction between silver and ceramics, indicating that the as-prepared composite ceramics were suitable for low-temperature co-fired ceramics applications. [ABSTRACT FROM AUTHOR]

Abstract: Cu x Ni1−x O electrochromic thin films were prepared by sol–gel dip coating and characterized by XRD, UV–vis absorption and electrochromic test. XRD results show that the structure of the Cu x Ni1−x O thin films is still in cubic NiO structure. UV–vis absorption spectra show that the absorption edges of the Cu x Ni1−x O films can be tuned from 335nm (x =0) to 550nm (x =0.3), and the transmittance of the colored films decrease as the content of Cu increases. Cu x Ni1−x O films show good electrochromic behavior, both the coloring and bleaching time for a Cu0.2Ni0.8O film were less than 1s, with a variation of transmittance up to 75% at the wavelength of 632.8nm. [Copyright &y& Elsevier]

Abstract: MgxNi1-xO thin films with a band-gap of 4.98eV were successfully prepared on quartz substrates by sol–gel method. XPS, XRD measurement results showed that MgxNi1-xO films with cubic NiO structure were formed at 1000°C. UV-visible absorption results showed that the absorption edges of the films varied as the amount of Mg2+ changed. The film with x=0.3 showed a band-gap of 4.98eV, which implies possible application for solar-blind UV detection. [Copyright &y& Elsevier]

Abstract: CuO-doped CaSiO3–1wt% Al2O3 ceramics were synthesized via a traditional solid-state reaction method, and their sintering behavior, microstructure and microwave dielectric properties were investigated. The results showed that appropriate CuO addition could accelerate the sintering process and assist the densification of CaSiO3–1wt% Al2O3 ceramics, which could effectively lower the densification temperature from 1250°C to 1050°C. However, the addition of CuO undermined the microwave dielectric properties. The optimal amount of CuO addition was found to be 0.8wt%, and the derived CaSiO3–Al2O3 ceramic sintered at 1100°C presented good microwave dielectric properties of ε r =7.27, Q×f=16,850GHz and τ f =−39.53ppm/°C, which is much better than those of pure CaSiO3 ceramic sintered at 1340 oC (Q×f=13,109GHz). The chemical compatibility of the above ceramic with 30 Pd/70 Ag during the cofiring process has also been investigated, and the result showed that there was no chemical reaction between palladium–silver alloys and ceramics. [Copyright &y& Elsevier]

Abstract: Tansparent p-type conducting indium-doped SnO2 thin films were successfully prepared by spray pyrolysis. The films were characterized by X-ray diffraction, Hall effect, and UV–Visible absorption spectra. The results showed that for films with In/Sn ratio less than 0.3, the films were rutile structure of SnO2, while for film with In/Sn ratio of 0.4, peaks from In2O3 were observed. Hall effect measurement showed that the conducting type was dependent on both the process temperature and In/Sn ratio. For the films with In/Sn ratio=0.1 and 0.2, and process temperatures T ≥600 °C, the films were p-type, while for T <600 °C, the films were n-type. For the films processed at the same temperature (T =700 °C), the films were n-type if In/Sn >0.2, and the films were p-type when In/Sn ≤0.2. In addition, UV–Vis absorption spectra showed no shift of the absorption edge when doped by indium for In/Sn ratio <0.4. [Copyright &y& Elsevier]