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Precision applications such as quantum computing, quantum and fiber sensing, and mmWave and RF generation, require ultra-low phase noise stabilized lasers operating at wavelengths across the visible to near-IR. These applications employ widely tunable table-scale laser systems, bulk-optic reference cavities, and optical isolation to achieve ultra-low frequency noise and high stability across wide wavelength ranges. Photonic integration promises to bring these laser systems to the chip-scale, enabling reliable, scalable and portable precision applications. Here we report record-low integrated laser linewidths with a coil-cavity stabilized 1550 nm tunable laser, that achieves 3 to 7 Hz fundamental linewidth across a 60 nm tuning range and 27 - 60 Hz integral linewidths with an Allan deviation of 1.8E-13 at 6.4 ms across 40 nm. These results represent 5 orders of magnitude noise reduction and almost 2-orders magnitude reduction in integral linewidth for widely tunable integrated lasers. The hybrid integrated silicon nitride external cavity tunable laser is stabilized to a silicon nitride 10-meter long integrated coil-resonator without the need for an optical isolator by leveraging the inherent 45 dB isolation. The laser and reference cavity are fabricated in the same 80 nm-thick ultra-low loss silicon nitride waveguide CMOS foundry compatible process, which combined with the inherent isolation, unlocks the path towards fully integrated visible to NIR frequency-stabilized lasers.

We demonstrate dual-wavelength distributed acoustic sensing over 37 km of standard single-mode fiber using $\phi$-OFDR, utilizing a scalable hybrid-integrated dual-wavelength laser chip frequency-locked to a high-Q integrated SiN coil resonator., Comment: 3 pages, 4 figures

We demonstrate an external cavity laser with intrinsic linewidth below 100 Hz around an operating wavelength of 852 nm, selected for its relevance to laser cooling and manipulation of cesium atoms. This system achieves a maximum CW output power of 24 mW, wavelength tunability over 15 nm, and a side-mode suppression ratio exceeding 50 dB. This performance level is facilitated by careful design of a low-loss integrated silicon nitride photonic circuit serving as the external cavity combined with commercially available semiconductor gain chips. This approach demonstrates the feasibility of compact integrated lasers with sub-kHz linewidth centering on the needs of emerging sensor concepts based on ultracold atoms and can be further extended to shorter wavelengths via selection of suitable semiconductor gain media.

Numerous applications in quantum and classical optics require scalable, high-speed modulators that cover visible-NIR wavelengths with low footprint, drive voltage (V) and power dissipation. A critical figure of merit for electro-optic (EO) modulators is the transmission change per voltage, dT/dV. Conventional approaches in wave-guided modulators seek to maximize dT/dV by the selection of a high EO coefficient or a longer light-material interaction, but are ultimately limited by nonlinear material properties and material losses, respectively. Optical and RF resonances can improve dT/dV, but introduce added challenges in terms of speed and spectral tuning, especially for high-Q photonic cavity resonances. Here, we introduce a cavity-based EO modulator to solve both trade-offs in a piezo-strained photonic crystal cavity. Our approach concentrates the displacement of a piezo-electric actuator of length L and a given piezoelectric coefficient into the PhCC, resulting in dT/dV proportional to L under fixed material loss. Secondly, we employ a material deformation that is programmable under a "read-write" protocol with a continuous, repeatable tuning range of 5 GHz and a maximum non-volatile excursion of 8 GHz. In telecom-band demonstrations, we measure a fundamental mode linewidth = 5.4 GHz, with voltage response 177 MHz/V corresponding to 40 GHz for voltage spanning -120 to 120 V, 3dB-modulation bandwidth of 3.2 MHz broadband DC-AC, and 142 MHz for resonant operation near 2.8 GHz operation, optical extinction down to min(log(T)) = -25 dB via Michelson-type interference, and an energy consumption down to 0.17 nW/GHz. The strain-enhancement methods presented here are applicable to study and control other strain-sensitive systems.

In this paper, we provide a system level perspective on the design of control electronics for large scale quantum systems. Quantum computing systems with high-fidelity control and readout, coherent coupling, calibrated gates, and reconfigurable circuits with low error rates are expected to have superior quantum volumes. Cryogenic CMOS plays a crucial role in the realization of scalable quantum computers, by minimizing the feature size, lowering the cost, power consumption, and implementing low latency error correction. Our approach toward achieving scalable feed-back based control systems includes the design of memory based arbitrary waveform generators (AWG's), wide band radio frequency analog to digital converters, integrated amplifier chain, and state discriminators that can be synchronized with gate sequences. Digitally assisted designs, when implemented in an advanced CMOS node such as 7 nm can reap the benefits of low power due to scaling. A qubit readout chain demands several amplification stages before the digitizer. We propose the co-integration of our in-house developed InP HEMT LNAs with CMOS LNA stages to achieve the required gain at the digitizer input with minimal area. Our approach using high impedance matching between the HEMT LNA and the cryogenic CMOS receiver can relax the design constraints of an inverter-based CMOS LNA, paving the way toward a fully integrated qubit readout chain. The qubit state discriminator consists of a digital signal processor that computes the qubit state from the digitizer output and a pre-determined threshold. The proposed system realizes feedback-based optimal control for error mitigation and reduction of the required data rate through the serial interface to room temperature electronics.

Realization of qubit gate sequences require coherent microwave control pulses with programmable amplitude, duration, spacing and phase. We propose an SRAM based arbitrary waveform generator for cryogenic control of spin qubits. We demonstrate in this work, the cryogenic operation of a fully programmable radio frequency arbitrary waveform generator in 14 nm FinFET technology. The waveform sequence from a control processor can be stored in an SRAM memory array, which can be programmed in real time. The waveform pattern is converted to microwave pulses by a source-series-terminated digital to analog converter. The chip is operational at 4 K, capable of generating an arbitrary envelope shape at the desired carrier frequency. Total power consumption of the AWG is 40-140mW at 4 K, depending upon the baud rate. A wide signal band of 1-17 GHz is measured at 4 K, while multiple qubit control can be achieved using frequency division multiplexing at an average spurious free dynamic range of 40 dB. This work paves the way to optimal qubit control and closed loop feedback control, which is necessary to achieve low latency error mitigation, Comment: 4 pages, IEEE ESSCIRC 2022 conference

Large-scale generation of quantum entanglement between individually controllable qubits is at the core of quantum computing, communications, and sensing. Modular architectures of remotely-connected quantum technologies have been proposed for a variety of physical qubits, with demonstrations reported in atomic and all-photonic systems. However, an open challenge in these architectures lies in constructing high-speed and high-fidelity reconfigurable photonic networks for optically-heralded entanglement among target qubits. Here we introduce a programmable photonic integrated circuit (PIC), realized in a piezo-actuated silicon nitride (SiN)-in-oxide CMOS-compatible process, that implements an N x N Mach-Zehnder mesh (MZM) capable of high-speed execution of linear optical transformations. The visible-spectrum photonic integrated mesh is programmed to generate optical connectivity on up to N = 8 inputs for a range of optically-heralded entanglement protocols. In particular, we experimentally demonstrated optical connections between 16 independent pairwise mode couplings through the MZM, with optical transformation fidelities averaging 0.991 +/- 0.0063. The PIC's reconfigurable optical connectivity suffices for the production of 8-qubit resource states as building blocks of larger topological cluster states for quantum computing. Our programmable PIC platform enables the fast and scalable optical switching technology necessary for network-based quantum information processors., Comment: 21 pages, 4 figures, 6 supplementary figures

Visible-wavelength very large-scale integration (VLSI) photonic circuits have potential to play important roles in quantum information and sensing technologies. The realization of scalable, high-speed, and low-loss photonic mesh circuits depends on reliable and well-engineered visible photonic components. Here we report a low-voltage optical phase shifter based on piezo-actuated mechanical cantilevers, fabricated on a CMOS compatible, 200 mm wafer-based visible photonics platform. We show linear phase and amplitude modulation with 6 V$_{\pi}$-cm in differential operation, -1.5 dB to -2 dB insertion loss, and up to 40 dB contrast in the 700 nm - 780 nm range. By adjusting selected cantilever parameters, we demonstrate a low-displacement and a high-displacement device, both exhibiting a nearly flat frequency response from DC to a peak mechanical resonance at 23 MHz and 6.8 MHz respectively, which through resonant enhancement of Q~40, further decreases the operating voltage down to 0.15 V$_{\pi}$-cm., Comment: 13 pages, 6 figures, 3 supplementary figures

Recent advances in photonic integrated circuits (PICs) have enabled a new generation of "programmable many-mode interferometers" (PMMIs) realized by cascaded Mach Zehnder Interferometers (MZIs) capable of universal linear-optical transformations on N input-output optical modes. PMMIs serve critical functions in photonic quantum information processing, quantum-enhanced sensor networks, machine learning and other applications. However, PMMI implementations reported to date rely on thermo-optic phase shifters, which limit applications due to slow response times and high power consumption. Here, we introduce a large-scale PMMI platform, based on a 200 mm CMOS process, that uses aluminum nitride (AlN) piezo-optomechanical actuators coupled to silicon nitride (SiN) waveguides, enabling low-loss propagation with phase modulation at greater than 100 MHz in the visible to near-infrared wavelengths. Moreover, the vanishingly low holding-power consumption of the piezo-actuators enables these PICs to operate at cryogenic temperatures, paving the way for a fully integrated device architecture for a range of quantum applications., Comment: 18 pages, 5 figures, 7 supplementary figures