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An analysis was conducted of the subthreshold current [I.sub.D] of pocket implanted MOSFETs using extensive device simulations and experimental data. An analytical model is presented for the subthreshold current applicable for any type of FET and it is shown that the subthreshold current of nMOSFETs is determined by the internal two-dimensional hole distribution across the device.

The cut-off frequency f(sub T) and the maximum oscillation frequency f(sub max) in NMOSTs are roughly inversely proportional to the gate length revealed from the device simulation of the 180-, 90-, and 65-nm CMOS generations. It is observed that reducing the gate resistance remains a major issue in the optimization of the maximum oscillation frequency.

The switching behavior in power trench MOSFETs is analyzed by using experiments and simulations, focusing on the charge density Q[sub gd]. An analytical model for calculating the Q[sub gd] is derived that takes into account the geometry dependence.

Nelson's perturbation approach forms the basis for the measurement of electro-optic effect in cubic materials and reveals that the magnitude of the electro-optic effect depends on electric field distribution and light beam propagation direction. This dependence has implications on the understanding of signal amplitude obtained with longitudinal electro-optic sampling. The negative effects are controlled in a configuration that is ideal for null measurement.

Focuses on a study which investigated the dependence of electro-optic (e-o) effect in cubic materials on electric field distribution and light beam propagation direction. Derivation of the e-o effect in cubic materials using Nelson's approach; Methodology of the study; Results and discussion.

Defects may arise in the semiconductor substrate and at interfaces due to the processing used to fabricate transistors and circuits. The development of low-thermal-budget processes, which is advantageous in many ways, unfortunately reduces the likelihood of annealing out these electrically active defects. Electrical characterisation using simple diode structures yields valuable information; not only the absolute leakage current density value, but also carrier lifetimes, leakage activation energies, and diode ideality factor. Coupled with material analysis techniques, they can provide a detailed picture of the problems associated with process-induced defects, and supply insight that can target optimised processes. In this paper the technological relevance of electrically active defects, their impact on device performance and power supplies, as well as their electrical and material characterisation, will be discussed. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) [ABSTRACT FROM AUTHOR]