94 results on '"Herrmann, Tom"'
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2. Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application
3. Chemical Conversion of Fischer–Tropsch Waxes and Plastic Waste Pyrolysis Condensate to Lubricating Oil and Potential Steam Cracker Feedstocks
4. Novel Hybrid SiGe-Silicon 5V pLDMOS on 28nm HKMG technology
5. New direction on OIG program exclusions: new guidance will help health care entities and practitioners facing potential legal exposure
6. SiGe channels for higher mobility CMOS devices
7. Numerical simulation of small silicon partially insulated MOSFETs
8. TCAD Modeling and Optimization of 28nm HKMG ESF3 Flash Memory
9. Design Optimization of MV-NMOS for ESD Self-protection in 28nm CMOS technology
10. 22FDX® fMAX Optimization through Parasitics Reduction and GM Boost
11. RF performance improvement on 22FDX® platform and beyond
12. The new OIG 'responsible corporate officer doctrine': compliance officers need to ensure executive leaders are briefed on the significance of the new doctrine
13. Investigation of advanced FDSOI CMOS devices for analog/mixed signal applications
14. Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application
15. Biophysical Aspects of Ca2+ - Transport Sites in Skeletal and Cardiac Sarcoplasmic Reticulum (Ca2+ + Mg2+)-ATPase
16. Isolation and Use of lonophores for Studying Ion Transport across Natural Membranes
17. Estimation of inter-binding-site distances in sarcoplasmic reticulum (Ca2+ + Mg2+)ATPase under occluded and non-occluded conditions
18. Mobility Investigations on Strained 30-nm High- $k$Metal Gate MOSFETs by Geometrical Magnetoresistance Effect
19. Simulation und Optimierung neuartiger SOI-MOSFETs
20. ENERGY TRANSDUCTION BETWEEN THE CATALYTIC AND IONOPHORIC GATE OF (CA2+ + MG2+)–ATPASE
21. Windows 8: boon or bane?
22. From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$-Based FeFET Devices
23. Performance investigation and optimization of Si:HfO2 FeFETs on a 28 nm bulk technology
24. Verdicts & Settlements December 17, 2007: Truck driver settles accident claim for $375,000.
25. Verdicts & Settlements October 15, 2007: Jury finds couple attempted to deceive insurer.
26. Jackson County Circuit Court awards $575K for Kansas officer's injuries.
27. St. Louis County jury finds hospital, lawn service not responsible for injuries.
28. Elevator mechanic settles case in St. Louis Circuit Court for $5 million.
29. Verdicts & Settlements October 1, 2007: Doctor's exam did not re-injure shoulder, jury says.
30. Verdicts & Settlements September 24, 2007: Truck driver receives $475,000 settlement for accident.
31. Branson ENT clinic wins appeal in medical malpractice case.
32. Discrimination for albino man does not get him asylum, says 8th U.S. Circuit Court of Appeals.
33. Verdicts & Settlements July 30, 2007:Woman injured in crash with truck wins at trial.
34. Univ. of Missouri journalism and law school students collaborate on Midwestern Innocence Project.
35. Missouri Supreme Court resurrects campaign contribution limits.
36. U.S. Supreme Court curbs free speech at schools.
37. Suit against Harrah's North Kansas City casino may proceed.
38. Verdicts and Settlements June 11, 2007: Missouri jury awards mother $450K in wrongful death suit.
39. Missouri court to address capital punishment and lethal injection issues.
40. Former Missouri U.S. attorneys believe Gonzales should go.
41. Missouri Appeals Court asked to define the word 'blight' in Clayton.
42. Missouri Appeals Court upholds $1.5M verdict for a truck driver injured in 1999.
43. Understanding Strain-Induced Drive-Current Enhancement in Strained-Silicon n-MOSFET and p-MOSFET
44. Effect of source/drain-extension dopant species on device performance of embedded SiGe strained p-metal oxide semiconductor field effect transistors using millisecond annealing
45. Detailed simulation study of embedded SiGe and Si:C source/drain stressors in nanoscaled silicon on insulator metal oxide semiconductor field effect transistors
46. Simulation of asymmetric doped high performance silicon on insulator metal oxide semiconductor field effect transistors for very large scale integrated complementary metal oxide semiconductor technologies
47. Mobility Investigations on Strained 30-nm High- $k$ Metal Gate MOSFETs by Geometrical Magnetoresistance Effect.
48. Advanced gate stack work function optimization and substrate dependent strain interactions on HKMG first stacks for 28nm VLSI ultra low power technologies.
49. From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices.
50. The role of head injury in cognitive functioning, emotional adjustment and criminal behaviour
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