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InGaN micro-LEDs (μ LEDs) with their potential high-volume applications have attracted substantial research interest in the past years. In comparison to other III–V semiconductors, InGaN exhibits a reduced susceptibility toward non-radiative surface recombination. However, efficiency degradation becomes more prominent as dimensions shrink to a few μ m or less. Due to the high surface-to-volume ratio of the miniaturized devices, the non-radiative recombination increases and reduces the internal quantum efficiency. While many groups focus on surface passivation to mitigate surface defects, the influence of crystallographic orientation of the μ LED sidewall on the efficiency remains unexplored. This study addresses this gap by investigating the impact of crystallographic orientation of the sidewalls on the emission properties of the μ LEDs. Hexagonal and elongated μ LEDs with dimensions as small as 3.5 μ m and sidewalls with crystallographically well-defined m- and a-planes were fabricated. Electrical and optical properties were investigated using photo- and electroluminescence. External quantum efficiency (EQE) is assessed based on well-known carrier recombination models. It can be shown that μ LED performance intrinsically depends on the crystallographic orientation of the sidewalls. Comparing hexagonal μ LED structures with a-plane and m-plane sidewalls, an increase in the EQE by 33 % was observed for structures with a-plane sidewalls, accompanied by reduction in the current density of the peak EQE by a nearly two orders of magnitude compared to structures with m-plane sidewalls. By analyzing the EQE characteristics at the μ LED center and near the sidewalls, the improvements can be directly attributed to the increased radiative recombination from sidewalls with a-plane orientation. [ABSTRACT FROM AUTHOR]

β-Ga2O3 thin films were grown on the substrates of sapphire, GaN, and single crystals of β-Ga2O3, using plasma-assisted molecular beam epitaxy. By varying deposition conditions, pure-phase epitaxial β-Ga2O3 thin films were obtained, and the crystal quality of the as-grown films was optimized. A systematic characterization and a detailed analysis were performed on the films, including the nucleation process, surface morphology, crystal quality, thermal stability, as well as electrical and optical properties. Optical absorption was investigated using photothermal deflection spectroscopy, which provides detailed information about sub-gap optical absorption. Photocurrent measurements indicated a pronounced persistent photo-conductivity of β-Ga2O3. A blue-UV emission with an energy of 3–3.5 eV was observed by cathodoluminescence spectroscopy. The Fermi level position of the as-grown film was determined based on temperature-dependent electrical conductivity measurements. It is proposed that oxygen vacancies in the film form a defect band at around E c -0.8 eV that pins the Fermi level and is related to the observed photocurrent and cathodoluminescence characteristics. [ABSTRACT FROM AUTHOR]

Tiny InGaN micro-LEDs ( μ -LEDs) play a pivotal role in emerging display technologies, particularly augmented reality (AR) applications. Achieving both high internal quantum efficiency (IQE) and efficient light extraction efficiency (LEE) is essential. While wet chemical etching can recover the IQE after dry etching, it alters the pixel shape, impacting optical properties and reducing the LEE. In this study, we overcome this issue by fabricating 1 μ m thin-film-based μ -LED emitter arrays with a metallic backside mirror deposited on a patterned dielectric material around the μ -LED mesa. This concave mirror can be straightforwardly integrated into a thin-film LED process chain, and it redirects photons within the μ -LED structure, enhancing the LEE in the forward direction. Electro-optical measurements show a 2.1-fold improvement in light output within the ±15 ∘ emission cone compared to μ -LEDs with vertical sidewalls. These findings hold significant implications for μ -LED projection displays, where maximizing the overall efficiency and directionality is critical.

Micro-light emitting diodes (µ-LEDs) are considered the key enabler for various high-resolution micro-display applications such as augmented reality, smartphones or head-up displays. Within this study we fabricated nitride-based µ-LED arrays in a thin film chip architecture with lateral pixel sizes down to 1 µm. A metal mirror on the p-side enhances the light outcoupling via the n-side after removal of the epitaxial growth substrate. Mounted devices with pixel sizes ranging from 1×1 to 8×8 µm 2 were electro-optically characterized within an integrating sphere and in a goniometer system. We measure increased external quantum efficiencies on smaller devices due to a higher light extraction efficiency (LEE) as predicted by wave optical simulations. Besides this size dependence of the LEE, also the far field properties show a substantial change with pixel size. In addition, we compared µ-LEDs with 40 nm and 80 nm thick aluminium oxide around the pixel mesa. Considerably different far field patterns were observed which indicate the sensitivity of optical properties to any design changes for tiny µ-LEDs. The experimentally obtained radiation behavior could be reasonably predicted by finite-difference time-domain simulations. This clearly reveals the importance of understanding and modeling wave optical effects inside µ-LED devices and the resulting impact on their optical performance.

Micro-light emitting diodes (µ-LEDs) suffer from a drastic drop in internal quantum efficiency that emerges with the miniaturization of pixels down to the single micrometer size regime. In addition, the light extraction efficiency (LEE) and far field characteristics change significantly as the pixel size approaches the wavelength of the emitted light. In this work, we systematically investigate the fundamental optical properties of nitride-based µ-LEDs with the focus on pixel sizes from 1 µm to 5 µm and various pixel sidewall angles from 0 ∘ to 60 ∘ using finite-difference time-domain simulations. We find that the LEE strictly increases with decreasing pixel size, resulting in a LEE improvement of up to 45% for a 1 µm pixel compared to a 20 µm pixel. The ideal pixel sidewall angle varies between 35 ∘ and 40 ∘ , leading to a factor of 1.4 enhancement with respect to vertical pixel sidewalls. For pixel sizes in the order of 2 µm and smaller, a substantial transition of far field properties can be observed. Here, the far field shape depends severely on the pixel sidewall angle and affects the LEE within a solid angle of ±15 ∘ . Moreover, we investigate the impact of emission wavelength and observe major differences in optical characteristics for blue, green and red emitting pixels, which is relevant for real-world applications. Finally, we discuss the implications of the assumptions we made and their significance for the design of µ-LEDs.

Nanowire (NW) based devices for solar driven artificial photosynthesis have gained increasing interest in recent years due to the intrinsically high surface to volume ratio and the excellent achievable crystal qualities. However, catalytically active surfaces often suffer from insufficient stability under operational conditions. To gain a fundamental understanding of the underlying processes, the photochemical etching behavior of hexagonal and round GaN NWs in deionized water under illumination are investigated. We find that the crystallographic c-plane remains stable, whereas the m-planes are photochemically etched with rates up to 11 nm min-1, depending on the applied UV light intensity. By investigating nanowalls, we achieve control of the exposed crystallographic facets and find an enhanced stability of the a-plane compared to the m-plane. Photo-excited holes, which drift to the side facets due to the upward surface band bending in nominally n-type (not intentionally doped) GaN, are identified as the driving force of the process, which allows the development of concepts for the stabilization of the nanostructures. A geometrically enhanced absorption of periodic NW arrays is correlated with a dependence of the etch rate on the NW pitch and diameter. Further, we find selective photochemical etching of the NW base in the presence of sub-band gap illumination, which is attributed to defect-related absorption in this region. These results provide improved understanding of the roles of inhomogeneous defect distribution, light excitation profiles, and different surface facets on the photochemical stability of nanostructures and provide viable strategies for improving stabilities under light-driven reaction conditions.

Solid-state quantum emitters embedded in a semiconductor crystal environment are potentially scalable platforms for quantum optical networks operated at room temperature. Prominent representatives are nitrogen-vacancy (NV) centers in diamond showing coherent entanglement and interference with each other. However, these emitters suffer from inefficient optical outcoupling from the diamond and from fluctuations of their charge state. Here, we demonstrate the implementation of regular n-type gallium nitride nanowire arrays on diamond as photonic waveguides to tailor the emission direction of surface-near NV centers and to electrically control their charge state in a p-i-n nanodiode. We show that the electrical excitation of single NV centers in such a diode can efficiently replace optical pumping. By the engineering of the array parameters, we find an optical read-out efficiency enhanced by a factor of 10 and predict a lateral NV-NV coupling 3 orders of magnitude stronger through evanescently coupled nanowire antennas compared to planar diamond not covered by nanowires, which opens up new possibilities for large-scale on-chip quantum-computing applications.

Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

The large surface-to-volume ratio of GaN nanowires implicates sensitivity of the optical and electrical properties of the nanowires to their surroundings. The implementation of an (Al,Ga)N shell with a larger band gap around the GaN nanowire core is a promising geometry to seal the GaN surface. We investigate the luminescence and structural properties of selective area-grown GaN-(Al,Ga)N core-shell nanowires grown on Si and diamond substrates. While the (Al,Ga)N shell allows a suppression of yellow defect luminescence from the GaN core, an overall intensity loss due to Si-related defects at the GaN/(Al,Ga)N interface has been observed in the case of Si substrates. Scanning transmission electron microscopy measurements indicate a superior crystal quality of the (Al,Ga)N shell along the nanowire side facets compared to the (Al,Ga)N cap at the top facet. A nucleation study of the (Al,Ga)N shell reveals a pronounced bowing of the nanowires along the c-direction after a short deposition time which disappears for longer growth times. This is assigned to an initially inhomogeneous shell nucleation. A detailed study of the proceeding shell growth allows the formulation of a strain-driven self-regulating (Al,Ga)N shell nucleation model.

We demonstrate the selective area growth of GaN-(Al,Ga)N core-shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. Raman measurements relate this shift to compressive strain within the GaN core. On the nanoscale, cathodoluminescence spectroscopy and scanning transmission electron microscopy prove the homogeneity of strain-related luminescence along the nanowire axis and the absence of significant fluctuations within the shell, respectively. A comparison of the experimental findings with numerical simulations indicates the absence of a significant defect-related strain relaxation for all investigated structures, with a maximum compressive strain of -3.4% for a shell thickness of 50 nm. The accurate control of the nanowire dimensions, namely, core diameter, shell thickness, and nanowire period, via selective area growth allows a specific manipulation of the resulting strain within individual nanowires on the same sample. This, in turn, enables a spatially resolved adjustment of the GaN band gap with an energy range of 240 meV in a one-step growth process.

In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. Thin Ti masks are structured by electron beam lithography which allows the fabrication of perfectly homogeneous GaN NW arrays with different diameters and distances. While the wurtzite NWs are found to be Ga-polar, N-polar nucleation leads to the formation of tripod structures with a zinc-blende core which can be efficiently suppressed above a substrate temperature of 870 °C. A variation of the III/V flux ratio reveals that both axial and radial growth rates are N-limited despite the globally N-rich growth conditions, which is explained by the different diffusion behavior of Ga and N atoms. Furthermore, it is shown that the hole arrangement has no effect on the selectivity but can be used to force a transition from nanowire to nanotube growth by employing a highly competitive growth regime.