905 results on '"Heyns M"'
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2. Auroral, Ionospheric and Ground Magnetic Signatures of Magnetopause Surface Modes
3. Adaptations to a geomagnetic field interpolation method in Southern Africa
4. Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
5. Low dephasing and robust micromagnet designs for silicon spin qubits
6. Uniform Spin Qubit Devices in an All-Silicon 300 mm Integrated Process
7. Investigation of microwave loss induced by oxide regrowth in high-Q Nb resonators
8. Probabilistic Analysis of Power Network Susceptibility to GICs
9. Data Driven Transfer Functions and Transmission Network Parameters for GIC Modelling
10. Frequency Components of Geomagnetically Induced Currents for Power System Modelling
11. dSECS: Including Variometers in Geomagnetic Field Interpolation
12. Ensemble Estimation of Network Parameters: A Tool to Improve the Real-time Estimation of GICs in the South African Power Network
13. Cleaning, rinsing and drying issues in post-Cu CMP cleaning: A case study
14. Nanoscale domain wall devices with magnetic tunnel junction read and write
15. Strain coupling optimization in magnetoelectric transducers
16. Demonstration of 2e12 cm− 2 eV− 1 2D-oxide interface trap density on back-gated MoS2 flake devices with 2.5 nm EOT
17. Auroral, Ionospheric and Ground Magnetic Signatures of Magnetopause Surface Modes
18. Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
19. Positive non-linear capacitance: the origin of the steep subthreshold-slope in ferroelectric FETs
20. Amorphous inclusions during Ge and GeSn epitaxial growth via chemical vapor deposition
21. Self-limiting electropolymerization of ultrathin, pinhole-free poly(phenylene oxide) films on carbon nanosheets
22. First principles investigation of charge transition levels in monoclinic, orthorhombic, tetragonal, and cubic crystallographic phases of HfO2.
23. Blote vertroue en die voorwaardes daarvoor
24. Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms
25. Physical forces exerted by microbubbles on a surface in a traveling wave field
26. Positive bias temperature instability of HfO2-based gate stacks at reduced thermal budget for future CMOS technologies.
27. Germanium Deep-Submicron p-FET and n-FET Devices, Fabricated on Germanium-On-Insulator Substrates
28. Fabrication of MBE High-κ MOSFETs in a Standard CMOS Flow
29. IMPACT OF HIGH-κ PROPERTIES ON MOSFET ELECTRICAL CHARACTERISTICS
30. Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
31. On the Considerations of Using Near Real Time Data for Space Weather Hazard Forecasting
32. Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements
33. Electrical Properties of Metal-Insulator-Semiconductor Devices with High Permittivity Gate Dielectric Layers
34. Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6
35. Chemical vapor deposition of monolayer-thin WS2 crystals from the WF6 and H2S precursors at low deposition temperature.
36. Low interfacial density of states around midgap in MBE-Ga2O3(Gd2O3)/In0.2Ga0.8As
37. Silicon and selenium implantation and activation in In 0.53Ga 0.47As under low thermal budget conditions
38. Magnetic domain walls: from physics to devices
39. Charge Trapping and Defect Generation in Thermal Oxide Layers
40. Charge Trapping, Degradation and Wearout of Thin Dielectric Layers During Electrical Stressing
41. Strontium niobate high- k dielectrics: Film deposition and material properties
42. Low dephasing and robust micromagnet designs for silicon spin qubits
43. Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high- k oxides by attenuated total reflectance infrared spectroscopy
44. Investigation of Microwave Loss Induced by Oxide Regrowth in High- Q Niobium Resonators
45. Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process
46. Long-wavelength, confined optical phonons in InAs nanowires probed by Raman spectroscopy
47. GaAs on Ge for CMOS
48. Aqueous solution–gel preparation of ultrathin ZrO 2 films for gate dielectric application
49. Catalytic Forming Gas Anneal on III-V/Ge MOS systems
50. Seedless Templated Growth of Hetero-Nanostructures for Novel Microelectronics Devices
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