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INTRODUCTION: Incorporation of a plant-based diet was effective in both induction and short-term relapse prevention in Crohn’s disease. Ten-year long-term relapse-free rates in Crohn’s disease are around 10% to 23%. OBJECTIVE: We investigated whether infliximab and plant-based diet as first-line therapy enhance the long-term relapse-free rate in patients with Crohn’s disease. METHODS: This single-group, prospective study was performed in tertiary hospitals in Japan. Remission was induced in 24 consecutive newly diagnosed adult patients with Crohn’s disease during hospitalization via 3 standard infliximab infusions together with a plant-based diet. Patients were instructed to continue the diet after discharge. Scheduled maintenance infliximab infusion was not used. The primary endpoint was relapse, which was defined as the appearance of symptoms resulting in the alteration of therapeutic modality. The secondary endpoints were C-reactive protein level, plant-based diet score, and surgery. RESULTS: The median follow-up period was 8.6 years. Thirteen cases were relapse-free. The relapse-free rate evaluated by Kaplan-Meier survival analysis at 1, 2, 3, and 4 years was 79%, 66%, 57%, and 52%, respectively. There was no further reduction afterward up to 10 years. The relapse-free rate with normal C-reactive protein levels at 1 to 2 and 3 to 10 years was 57% and 52%, respectively. The plant-based diet score at 20 months and 5 years was significantly higher relative to baseline (p < 0.0001). Surgical rates at 5 and 10 years were 12% and 19%, respectively. CONCLUSIONS: Infliximab and plant-based diet as first-line therapy created an unprecedented relapse-free course in nearly half of patients with Crohn’s disease.

Electrical manipulation of magnetic materials by current-induced spin torque constitutes the basis of spintronics. Here, we show an unconventional response to spin–orbit torque of a non-collinear antiferromagnet Mn3Sn, which has attracted attention owing to its large anomalous Hall effect despite a vanishingly small net magnetization. In epitaxial heavy-metal/Mn3Sn heterostructures, we observe a characteristic fluctuation of the Hall resistance under the application of electric current. This observation is explained by a rotation of the chiral-spin structure of Mn3Sn driven by spin–orbit torque. We find that the variation of the magnitude of anomalous Hall effect fluctuation with sample size correlates with the number of magnetic domains in the Mn3Sn layer. In addition, the dependence of the critical current on Mn3Sn layer thickness reveals that spin–orbit torque generated by small current densities, below 20 MA cm−2, effectively acts on the chiral-spin structure even in Mn3Sn layers that are thicker than 20 nm. The results provide additional pathways for electrical manipulation of magnetic materials. Current-induced rotation in epitaxial films of the non-collinear antiferromagnet Mn3Sn is investigated.

The development of new functional memories using emerging nonvolatile devices has been widely investigated. Spin-transfer torque magnetoresistive random access memory (STT-MRAM) has become new technology platform to overcome the issue in power consumption of logic for the application from IoT to AI; however, STT-MRAM has a tradeoff relationship between endurance, retention, and access time. This is because the MTJ device used in STT-MRAM is a two-terminal device, and excessive read current for high-speed readout can cause unexpected data writing, or so-called read disturbance. In order to meet the demand for the realization of high-speed nonvolatile memory, the development of new memories based on innovative circuit, device, and integration process is required. In this article, we demonstrate an SOT-MRAM, a nonvolatile memory using MTJ devices with spin-orbit-torque (SOT) switching that have a read-disturbance-free characteristic. The SOT-MRAM fabricated using a 55-nm CMOS process is implemented in a dual-port configuration utilizing a three-terminal structure of the device for realizing a wide bandwidth applicable to high-speed applications. In addition, a read-energy reduction technique called a self-termination scheme is also implemented. Through the measurement results of the fabricated prototype chip, we will demonstrate the proposed SOT-MRAM achieves 60-MHz write and 90-MHz read operations with 1.2-V supply voltage under a magnetic-field-free condition.

Spin defect centers with long quantum coherence times ($T_2$) are key solid-state platforms for a variety of quantum applications. Recently, cluster correlation expansion (CCE) techniques have emerged as a powerful tool to simulate the $T_2$ of defect electron spins in these solid-state systems with good accuracy. Here, based on CCE, we uncover an algebraic expression for $T_2$ generalized for host compounds with dilute nuclear spin baths, which enables a quantitative and comprehensive materials exploration with a near instantaneous estimate of the coherence. We investigate more than 12,000 host compounds at natural isotopic abundance, and find that silicon carbide (SiC), a prominent widegap semiconductor for quantum applications, possesses the longest coherence times among widegap non-chalcogenides. In addition, more than 700 chalcogenides are shown to possess a longer $T_2$ than SiC. We suggest new potential host compounds with promisingly long $T_2$ up to 47 ms, and pave the way to explore unprecedented functional materials for quantum applications., 24 pages, 4 figures, 1 table

The use of high‑energy x‑ray diffraction techniques with the latest generation synchrotron sources has created new approaches to study quantitatively the structure of noncrystalline materials. Recently, this technique has been combined with neutron diffraction at pulsed source to provide more detailed and reliable structural information not previously available. This article reviews and summarises recent results obtained from the high energy x‑ray diffraction on several oxide glasses, SiO2, B2O3 and PbSiO3, using bending magnet beamlines at SPring‑8. In particular, it addresses the structural models of the oxide glasses obtained by the reverse Monte Carlo (RMC) modelling technique using both the high energy x‑ray and neutron diffraction data.

Spin Hall nano-oscillators (SHNOs) are emerging spintronic devices for microwave signal generation and oscillator-based neuromorphic computing combining nano-scale footprint, fast and ultra-wide microwave frequency tunability, CMOS compatibility, and strong non-linear properties providing robust large-scale mutual synchronization in chains and two-dimensional arrays. While SHNOs can be tuned via magnetic fields and the drive current, neither approach is conducive to individual SHNO control in large arrays. Here, we demonstrate electrically gated W/CoFeB/MgO nano-constrictions in which the voltage-dependent perpendicular magnetic anisotropy tunes the frequency and, thanks to nano-constriction geometry, drastically modifies the spin-wave localization in the constriction region resulting in a giant 42% variation of the effective damping over four volts. As a consequence, the SHNO threshold current can be strongly tuned. Our demonstration adds key functionality to nano-constriction SHNOs and paves the way for energy-efficient control of individual oscillators in SHNO chains and arrays for neuromorphic computing., Spin Hall nano-oscillators can be tuned via magnetic fields and the drive current, but individual oscillator control in large arrays remains a challenge. Here, the authors provide individual control of the threshold current and the auto-oscillation frequency by voltage-controlled magnetic anisotropy.

D019-Mn3Sn, an antiferromagnet having a non-collinear spin structure in a kagome lattice, has attracted great attention owing to various intriguing properties such as large anomalous Hall effect. Stability of a magnetic state against thermal fluctuation, characterized in general by the thermal stability factor Δ, has been well studied in ferromagnetic systems but not for antiferromagnets. Here, we study Δ of the antiferromagnetic Mn3Sn nanodots as a function of their diameter D. To quantify Δ, we measure the switching probability as a function of the pulse-field amplitude and analyze the results based on a model taking account of two and sixfold magnetic anisotropies in the kagome plane. We observe no significant change in Δ down to D = 300 nm below which it decreases with D. The obtained D dependence is well explained by a single-domain and nucleation-mediated reversal models. These findings provide a basis to understand the thermal fluctuation and reversal mechanism of antiferromagnets for device applications.