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542 results on '"Hieu, Nguyen N."'

3. Electron–photon–phonon interactions in Dirac semimetals: Magneto-optical absorption and mobility analysis.

Author

Hieu, Nguyen N., Nguyen, Chuong V., Kubakaddi, S. S., Hoa, Le T., and Phuc, Huynh V.

Subjects
*ABSORPTION coefficients, *LANDAU levels, *ELECTRON density, *FERMI energy, *MAGNETIC fields
Abstract

We study the magneto-optical properties of Dirac semimetal (DSM) slabs with particular emphasis on Cd 3 As 2 through electron–photon–phonon interactions, focusing on the magneto-optical absorption coefficient (MOAC) and full-width at half maximum (FWHM). Studying the Landau level (LL) energy of DSMs in the (x y) plane and the z -direction revealed a unique deviation from the square root dependence on the magnetic field, distinguishing DSMs from other semiconductors. At high magnetic fields, the electron–hole symmetry in the LL spectrum is broken, indicating a topological phase in DSMs. For undoped DSMs, MOAC is driven by interband transitions, with peaks from one-photon absorption being smaller and positioned to the left of two-photon ones. Increasing the magnetic field increases peak values. FWHM for one- and two-photon processes increases with the magnetic field and follows a T dependence on temperature. In doped DSMs, both intraband and interband transitions occur, with new interband peaks emerging at higher temperatures near the Fermi energy. Increased electron density shifts the peak position slightly toward higher energy. Peaks from optical phonon emission are consistently higher and located to the right of those from optical phonon absorption, indicating a stronger emission process. The FWHM data allow for the estimation of electron mobilities, and using a reasonable broadening parameter, our predicted mobility values agree with experimental results. [ABSTRACT FROM AUTHOR]

Published
2024
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7. Induced out-of-plane piezoelectricity and giant Rashba spin splitting in Janus WSiZ3H (Z = N, P, As) monolayers toward next-generation electronic devices.

Author

Vu, Tuan V., Hoi, Bui D., Kartamyshev, A. I., and Hieu, Nguyen N.

Subjects
PIEZOELECTRICITY, PIEZOELECTRIC thin films, MONOMOLECULAR films, ELECTRONIC equipment, SPIN-orbit interactions, MIRROR symmetry, BAND gaps, PIEZOELECTRIC materials
Abstract

Two-dimensional (2D) piezoelectric nanomaterials have widely been studied recently due to their promise for various applications in technology. Investigation of vertical piezoelectricity will contribute to a deeper understanding of the intrinsic mechanism of piezoelectric effects in the 2D structures. In this paper, we report a first-principle study for the structural, electronic, piezoelectric, and transport properties of new-designed Janus WSi Z 3 H (Z = N, P, and As) monolayers. The structural stability of WSi Z 3 H is theoretically confirmed based on the energetic, phonon dispersion, and also elastic analyses. At the ground state, while WSiN 3 H is an indirect semiconductor, both WSiP 3 H and WSiAs 3 H are predicted to be direct semiconductors with smaller bandgaps. When the spin-orbit coupling effects are taken into account, a large valley spin splitting is observed at the K point of WSi Z 3 H materials. Interestingly, a giant Rashba spin splitting is found in WSiP 3 H and WSiAs 3 H with Rashba constant α R up to 770.91 meV Å. Additionally, our first-principles study indicates that Janus WSi Z 3 H monolayers are piezoelectric semiconductors with high out-of-plane piezoelectric coefficient | d 31 | , up to 0.15 pm/V, due to the broken mirror symmetry. Besides, with high electron mobilities and also possessing direct band gaps, WSiP 3 H and WSiAs 3 H monolayers are favorable for applications in optoelectronics. [ABSTRACT FROM AUTHOR]

Published
2024
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11. Exploring the versatility of MoSe2/WS2 heterostructures.

Author

Vu, Tuan V., Vo, Dat D., Nguyen, Cuong Q., Hieu, Nguyen N., Phuc, Huynh V., and Nguyen, Chuong V.

Subjects
ELECTRIC field effects, CHARGE carrier mobility, ELECTRIC fields, HETEROSTRUCTURES, SEMICONDUCTORS
Abstract

Two-dimensional materials and their combined heterostructures have paved the way for numerous next-generation electronic and optoelectronic applications. Herein, we performed first principles calculations to computationally design the MoSe2/WS2 heterostructure and consider its geometric structure, electronic properties and contact behavior, as well as the effects of the electric fields and strain. Our results show that the MoSe2/WS2 heterostructure is energetically, thermodynamically and mechanically stable. Depending on the stacking configurations, the MoSe2/WS2 heterostructure could form type-I or type-II band alignment. The versatility in contact behavior makes the MoSe2/WS2 heterostructure attractive in electronics and optoelectronics. The combination of the MoSe2/WS2 heterostructure also leads to an enhancement in the adsorption efficiency and the carrier mobility compared with the constituent components. More interestingly, our findings demonstrate that the electric field can induce the transition between type-I and type-II band alignments, as evident by the experimental measurement [J. Kistner-Morris, A. Shi, E. Liu, T. Arp, F. Farahmand, T. Taniguchi, K. Watanabe, V. Aji, C. H. Lui and N. Gabor, Nat. Commun., 2024, 15, 4075]. Additionally, we also find that strain can also induce the transition between type-I and type-II band alignments and lead to the transition from semiconductor to metal in the MoSe2/WS2 heterostructure. Our findings prove that the MoSe2/WS2 heterostructure holds significant potential for developing next-generation electronics. [ABSTRACT FROM AUTHOR]

Published
2024
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