1. In-Column Backscattered Electron Microscopy for a Rapid Identification of the Number of Layers in MoS2 Nanosheets: Implications for Electronic and Optoelectronic Devices.
- Author
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Sharbidre, Rakesh S., Narute, Prashant, Byen, Ji Cheol, Kim, Doyeon, Park, Jaesung, Park, Byong Chon, and Hong, Seong-Gu
- Abstract
An accurate and rapid identification of the number of MoS
2 layers in a nondestructive manner is essential for implementing MoS2 -based electronic and optoelectronic devices as their properties and performance depend sensitively on the layer number. This paper reports that scanning electron microscopy imaging with an in-column backscattered electron (BSE) detector coupled with a low acceleration voltage provides layer number-sensitive high contrast for MoS2 on an insulating SiO2 substrate, enabling the differentiation of MoS2 with different layer numbers. The results show that, unlike graphene, where secondary electrons emitted from the SiO2 substrate are attenuated by graphene, leading to reverse contrast with increasing the layer number, BSEs originating from the elastic scattering of incident primary electrons with Mo and S atoms give rise to a layer number-sensitive compositional contrast for MoS2 at a low acceleration voltage. Contrary to low-energy secondary electrons, high-energy BSEs are less sensitive to the surface charging effect, which makes BSE imaging at a low acceleration voltage advantageous. This feature renders BSE imaging less noisy and more stable. A statistical analysis of the relationship between the MoS2 layer number and BSE image contrast demonstrates that the unique relationship between the two allows for a quantitative estimation of the MoS2 layer number up to four layers. [ABSTRACT FROM AUTHOR]- Published
- 2024
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