161 results on '"Hiraiwa, Atsushi"'
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2. Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors
3. Capacitance–voltage characterization of metal–insulator–semiconductor capacitors formed on wide-bandgap semiconductors with deep dopants such as diamond.
4. Carbon 1s X-ray photoelectron spectra of realistic samples of hydrogen-terminated and oxygen-terminated CVD diamond (111) and (001)
5. Influence of Al2O3 atomic-layer deposition temperature on positive-bias instability of metal/Al2O3/β-Ga2O3 capacitors.
6. Influence of gate material and diamond surface termination on current conduction in metal/Al2O3/diamond capacitors.
7. Space-charge-controlled field emission analysis of current conduction in amorphous and crystallized atomic-layer-deposited Al2O3 on GaN.
8. Electrical Characterization of Metal/Al₂O₃/SiO₂/Oxidized-Si-Terminated (C–Si–O) Diamond Capacitors
9. Dynamic space-charge-controlled field emission model of current conduction in metal–insulator–semiconductor capacitors.
10. Vertical-type two-dimensional hole gas diamond metal oxide semiconductor field-effect transistors
11. 300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3Gate Insulator
12. −10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p+-Diamond-First and Silicon Molecular Beam Deposition Approaches
13. Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain
14. 580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs With a P−-Drift Layer
15. C-Si Bonds 2dhg Diamond Mosfet; Normally-Off Characteristics at Low Temperatures (10 K) and Wide Temperature Stability (10-573 K)
16. Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3
17. Gate/insulator-interfacial-dipole-controlled current conduction in Al2O3 metal-insulator-semiconductor capacitors.
18. Advanced photo-assisted capacitance–voltage characterization of insulator/wide-bandgap semiconductor interface using super-bandgap illumination.
19. Lowest contact resistance for high drain current density >1A/mm at Diamond MOSFETs with heavily boron-doped source and drain
20. High Breakdown Voltage (-580 V) in (001) Vertical-Type 2DHG Diamond MOSFET by p--drift layer
21. High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O3
22. Low ON-Resistance (2.5 mΩ · cm2) Vertical-Type 2-D Hole Gas Diamond MOSFETs With Trench Gate Structure
23. Normally-OFF Two-Dimensional Hole Gas Diamond MOSFETs Through Nitrogen-Ion Implantation
24. Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN.
25. −10 V Threshold Voltage High-Performance Normally-OFF C–Si Diamond MOSFET Formed by p + -Diamond-First and Silicon Molecular Beam Deposition Approaches.
26. Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts
27. Enhancement of drain current in planar MOSFETs by dopant profile engineering using nonmelt laser spike annealing
28. Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs
29. Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN
30. Effect of the Gate Width Extension in Millimeter Scale on the RF Performance of Polycrystalline Diamond MOSFETs
31. The Si-terminated 2DHG Diamond MOSFETs with Normally-off Operation and Wide temperature Stability (~673 K)
32. 1.2 A/mm Drain Current Density and 1.1 Ω mm Lowest Contact Resistance for 2DHG Diamond MOSFETs Using High Concentration Selective Regrowth B-doped Diamond
33. Vertical-type 2DHG Diamond MOSFET; Achieve High Current Operation of -3.4 A by Expanding Gate Width
34. 580 V Breakdown Voltage in Vertical Diamond Trench MOSFETs With a P − -Drift Layer.
35. Over 12000 A/cm2and 3.2 m$\Omega$ cm2Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET
36. Postdeposition annealing effect on atomic-layer-deposited Al2O3 gate insulator on (001) β-Ga2O3.
37. A mechanism and a reduction technique for large reverse leakage current in p-n junctions
38. Scaling law in ULSI contamination control
39. Observation of natural oxide growth on silicon facets using an atomic force microscope with current measurement
40. Isotope analysis of diamond-surface passivation effect of high-temperature H2O-grown atomic layer deposition-Al2O3 films.
41. 3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
42. Refractory two-dimensional hole gas on hydrogenated diamond surface.
43. Over 12000 A/cm2 and 3.2 m $\Omega$ cm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET.
44. Spectral analysis of line edge and line-width roughness with long-range correlation.
45. Vertical edge graphite layer on recovered diamond (001) after high-dose ion implantation and high-temperature annealing (Phys. Status Solidi B 9/2017)
46. Experimental determination of equivalent oxide thickness of gate insulators.
47. Normally-Off C–H Diamond MOSFETs With Partial C–O Channel Achieving 2-kV Breakdown Voltage
48. Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications
49. Post-deposition-annealing effect on current conduction in Al2O3 films formed by atomic layer deposition with H2O oxidant
50. Development Status of New Material Power Devices
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