164 results on '"Hirashita, N."'
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2. Analysis of growth rate during Si epitaxy by hydrogen coverage model
3. Chemistry and band offsets of HfO 2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy
4. Interfacial chemistry and structures of ultrathin Si oxynitride films
5. Initial oxidation features of Si(100) studied by Si2p core-level photoemission spectroscopy
6. Microstructural study on the C49-to-C54 phase transformation in TiSi2 formed from preamorphization implantation
7. Formation process of high-purity Ge-on-insulator layers by Ge-condensation technique
8. Retention and thermal desorption of helium in pure tungsten
9. Electronic properties of epitaxial TiN/VN(001) superlattices.
10. Electrical properties of Si films doped with 200-eV In+ ions during growth by molecular-beam epitaxy.
11. Analyses of plated films by thermal desorption spectrometry (TDS)
12. High Mobility sub-60nm Gate Length Germanium-On-Insulator Channel pMOSFETs with Metal Source/Drain and TaN MIPS Gate
13. Gate all around (GAA) strained-silicon-on-nothing (SSON) MOSFETs and evaluation of their strain by nano-beam diffraction (NBD)
14. Physical Understanding of Strain Effects on Gate Oxide Reliability of MOSFETs
15. Physical Mechanism for Hole Mobility Enhancement in (110)-Surface Strained-Si/Strained-SiGe Structures with Anisotropic/Biaxial Strain
16. Observation of Mobility Enhancement in Strained Si and SiGe Tri-Gate MOSFETs with Multi-Nanowire Channels Trimmed by Hydrogen Thermal Etching
17. Characterization of in-plane strain relaxation in strained layers using a newly developed plane nano-beam electron diffraction (plane-NBD) method
18. The generation of crystal defects in Ge-on-insulator (GOI) layers in the Ge-condensation process
19. Strain relaxation in strained-Si layers on SiGe-on-insulator substrates
20. High-Performance Uniaxially Strained SiGe-on-Insulator pMOSFETs Fabricated by Lateral-Strain-Relaxation Technique
21. Performance enhancement of partially and fully depleted strained-SOI MOSFETs
22. Characterization of in-plane strain relaxation in strained layers after mesa isolation using a newly developed plane-NBD method
23. p-n Junction Leakage Current in Strained-Si/SGOI Diodes
24. Generation of Crystal Defects in Ge-on-Insulator (GOI) Layers in Ge-condensation Process
25. Formation of SGOI Structures with Low Dislocation Density by Two Step Oxidation and Condensation Method
26. Novel Anisotropic Strain Engineering on (110)-Surface SOI CMOS Devices using Combination of Local/Global Strain Techniques
27. Strain Relaxation in Strained-Si Layer on SiGe-on-Insulator Substrate
28. Chemistry and band offsets of HfO2 thin films on Si revealed by photoelectron spectroscopy and x-ray absorption spectroscopy
29. Fully depleted SOI process and device technology for digital and RF applications
30. Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy
31. Effect of nitrogen doping into SiO2 studied by photoemission spectroscopy
32. Chemistry and band offsets of HfO2 thin films for gate insulators
33. Fully-depleted SOI CMOSFETs with the fully-silicided source/drain structure
34. High performance multi-gate pMOSFET using uniaxially-strained SGOI channels.
35. Performance enhancement of partially- and fully-depleted strained-SOI MOSFETs and characterization of strained-Si device parameters.
36. Device characterizations and physical models of strained-Si channel CMOS.
37. Study on temperature calibration of a silicon substrate in a temperature programmed desorption analysis
38. Chemical structure of the ultrathinSiO2/Si(100)interface: An angle-resolved Si2pphotoemission study
39. High-Resolution Photoelectron Spectroscopy of Interfacial Nitrogen in Ultrathin Si Oxynitride Films
40. An accurate discrimination method of gate oxide breakdown positions by a new test structure of MOS capacitors.
41. Transmission Electron Microscopic Study of TiSi2 Microstructures and the C49-C54 Phase Transformation in Narrow Lines
42. Pin-Point Transmission Electron Microscopic Analysis Applied to Off-Leakage Failures of a Bipolar Transistor in 0.5μm BiCMOS Devices
43. Accurate secondary ion mass spectrometry analysis of shallow doping profiles in Si based on the internal standard method
44. Transmission electron microscopy observation of interfacial reactions in high-temperature sputtered Al alloy/TiN system
45. Studies of Corrosive Outgasses from Via Holes Using Thermal Desorption Spectroscopy
46. The degradation of TDDB characteristics of Si0/sub 2//Si/sub 3/N/sub 4//Si0/sub 2/ stacked films caused by surface roughness of Si/sub 3/N/sub 4/ films (DRAMs)
47. The effect of oxide charges at LOCOS isolation edges on oxide breakdown
48. A new failure mechanism and its improvement on gate oxide reliability at field edge by LOCOS isolation
49. The Selective Growth of LPCVD-Si3N4 on Cleaned Si Surface
50. Si-Gate CMOS devices on a Si/CaF2/Si structure.
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