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We report on a novel method of fabricating 10-nm-scale GaAs dot structures using molecular beam epitaxy and in situgas etching. Self-assembled nanometer-scale InAs dots are formed first and are used as masks for the subsequent etching of GaAs by Cl2gas. In this approach, we also make use of HCl gas etching to remove selectively the InAs wetting layer as well as the InAs dots to yield clean and strain-free GaAs dot structures. The height and base diameter of resultant GaAs dots are studied by atomic force microscopy and found to be 10±2 nm and 30±5 nm, respectively.