1. Effects of Oxide-trapped Charges and Interface Traps in Organic Self-assembled Monolayer/Silicon Systems due to Local Current Injection
- Author
-
Jeonghyeon Yang, Sung-Woong Choi, Ho-Sup Kim, Jiwon Han, Haejong Kim, and Sang-Soo Oh
- Subjects
010302 applied physics ,chemistry.chemical_classification ,Materials science ,Silicon ,Oxide ,General Physics and Astronomy ,chemistry.chemical_element ,Self-assembled monolayer ,Biasing ,02 engineering and technology ,Trapping ,021001 nanoscience & nanotechnology ,01 natural sciences ,chemistry.chemical_compound ,chemistry ,Chemical engineering ,0103 physical sciences ,Monolayer ,0210 nano-technology ,Layer (electronics) ,Alkyl - Abstract
The charge trapping characteristics of silicon (Si) substrates covered with a self-assembled monolayer (SAM) were studied using on a local biasing method with Kelvin-probe force microscopy. A hexadecyl SAM (HD-SAM) on a Si substrate, in which the molecules were covalently bonded to the Si substrate, was found to have no charge trapping sites at its monolayer/Si interface while an ocatadecylsilyl SAM (ODS-SAM) on a Si substrate, in which a thin oxide layer was inserted between the molecules and the Si substrate, showed a distinct charge trapping behavior. The alkyl monolayer directly fixed on Si is promising as a very thin insulating layer in Si microelectronics.
- Published
- 2020