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Light-harvesting devices made from PbS quantum dot (QD) absorbers are one of the many promising technologies of third-generation photovoltaics. Their simple, solution-based fabrication together with a highly tunable and broad light absorption makes their application in newly developed solar cells particularly promising. In order to yield devices with reduced voltage and current losses, PbS QDs need to have strategically passivated surfaces, most commonly achieved through lead iodide and bromide passivation. The interdot spacing is then predominantly filled with residual amorphous lead halide species that remain from the ligand exchange, thus hindering efficient charge transport and reducing device stability. Herein, we demonstrate that a post-treatment by iodide based 2-phenylethlyammonium salts (X-PEAI) and intermediate 2D perovskite formation can be used to manage the lead halide excess in the PbS QD active layer. This treatment results in improved device performance and increased shelf-life stability, demonstrating the importance of interdot spacing management in PbS quantum dot photovoltaics.

Bismuth oxide iodide (BiOI) has been viewed as a suitable environmentally-friendly alternative to lead-halide perovskites for low-cost (opto-)electronic applications such as photodetectors, phototransistors and sensors. To enable its incorporation in these devices in a convenient, scalable, and economical way, BiOI thin films were investigated as part of heterojunctions with various p-type organic semiconductors (OSCs) and tested in a field-effect transistor (FET) configuration. The hybrid heterojunctions, which combine the respective functionalities of BiOI and the OSCs were processed from solution under ambient atmosphere. The characteristics of each of these hybrid systems were correlated with the physical and chemical properties of the respective materials using a concept based on heteropolar chemical interactions at the interface. Systems suitable for application in lateral transport devices were identified and it was demonstrated how materials in the hybrids interact to provide improved and synergistic properties. These indentified heterojunction FETs are a first instance of successful incorporation of solution-processed BiOI thin films in a three-terminal device. They show a significant threshold voltage shift and retained carrier mobility compared to pristine OSC devices and open up possibilities for future optoelectronic applications.

Inorganic cesium lead iodide (CsPbI$_3$) perovskite solar cells (PSCs) have attracted enormous attention due to their excellent thermal stability and optical bandgap (~1.73 eV), well-suited for tandem device applications. However, achieving high-performing photovoltaic devices processed at low temperatures is still challenging. Here we reported a new method to fabricate high-efficiency and stable $\gamma$-CsPbI$_3$ PSCs at lower temperatures than was previously possible by introducing the long-chain organic cation salt ethane-1,2-diammonium iodide (EDAI2) and regulating the content of lead acetate (Pb(OAc)2) in the perovskite precursor solution. We find that EDAI2 acts as an intermediate that can promote the formation of $\gamma$-CsPbI$_3$, while excess Pb(OAc)2 can further stabilize the $\gamma$-phase of CsPbI$_3$ perovskite. Consequently, improved crystallinity and morphology and reduced carrier recombination are observed in the CsPbI$_3$ films fabricated by the new method. By optimizing the hole transport layer of CsPbI$_3$ inverted architecture solar cells, we demonstrate up to 16.6% efficiencies, surpassing previous reports examining $\gamma$-CsPbI$_3$ in inverted PSCs. Notably, the encapsulated solar cells maintain 97% of their initial efficiency at room temperature and dim light for 25 days, demonstrating the synergistic effect of EDAI2 and Pb(OAc)2 on stabilizing $\gamma$-CsPbI$_3$ PSCs.

Exposure to environmental factors is generally expected to cause degradation in perovskite films and solar cells. Herein, we show that films with certain defect profiles can display the opposite effect, healing upon exposure to oxygen under illumination. We tune the iodine content of methylammonium lead triiodide perovskite from understoichiometric to overstoichiometric and expose them to oxygen and light prior to the addition of the top layers of the device, thereby examining the defect dependence of their photooxidative response in the absence of storage-related chemical processes. The contrast between the photovoltaic properties of the cells with different defects is stark. Understoichiometric samples indeed degrade, demonstrating performance at 33% of their untreated counterparts, while stoichiometric samples maintain their performance levels. Surprisingly, overstoichiometric samples, which show low current density and strong reverse hysteresis when untreated, heal to maximum performance levels (the same as untreated, stoichiometric samples) upon the photooxidative treatment. A similar, albeit smaller-scale, effect is observed for triple cation and methylammonium-free compositions, demonstrating the general application of this treatment to state-of-the-art compositions. We examine the reasons behind this response by a suite of characterization techniques, finding that the performance changes coincide with microstructural decay at the crystal surface, reorientation of the bulk crystal structure for the understoichiometric cells, and a decrease in the iodine-to-lead ratio of all films. These results indicate that defect engineering is a powerful tool to manipulate the stability of perovskite solar cells.

The synthesis of metal sulfide nanocrystals is a crucial step in the fabrication of quantum dot (QD) photovoltaics. Control over the quantum dot size during synthesis allows for precise tuning of their optical and electronic properties, making them an appealing choice for electronic applications. This flexibility has led to the implementation of quantum dots in both highly-efficient single junction solar cells and other optoelectronic devices including photodetectors and transistors. Most commonly, metal sulfide quantum dots are synthesized using the hot-injection method utilizing toxic, and air- and moisture sensitive sulfur source: bis(trimethylsilyl) sulfide (TMS)2S. Here, we present bis(stearoyl) sulfide (St2S) as a new type of air-stable sulfur precursor for the synthesis of sulfide-based QDs, which yields uniform, pure, and stable nanocrystals. Photovoltaic devices based on these QDs are equally efficient as those fabricated by (TMS)2S but exhibit an enhanced operational stability. These results highlight that St2S can be widely adopted for the synthesis of metal sulfide quantum dots for a range of optoelectronic applications.

Molecular-scale diodes made from self-assembled monolayers (SAMs) could complement silicon-based technologies with smaller, cheaper, and more versatile devices. However, advancement of this emerging technology is limited by insufficient electronic performance exhibited by the molecular current rectifiers. We overcome this barrier by exploiting the charge-transfer state that results from co-assembling SAMs of molecules with strong electron donor and acceptor termini. We obtain a substantial enhancement in current rectification, which correlates with the degree of charge transfer, as confirmed by several complementary techniques. These findings provide a previously unexplored method for manipulating the properties of molecular electronic devices by exploiting donor/acceptor interactions. They also serve as a model test platform for the study of doping mechanisms in organic systems. Our devices have the potential for fast widespread adoption due to their low-cost processing and self-assembly onto silicon substrates, which could allow seamless integration with current technologies.

Modern photovoltaic devices are often based on a heterojunction structure where two components with different optoelectronic properties are interfaced. The properties of each side of the junction can be tuned by either utilizing different materials (e.g. donor/acceptor) or doping (e.g. PN Si junction) or even varying their dimensionality (e.g. 3D/2D). In this work we demonstrate the concept of phase heterojunction (PHJ) solar cells by utilizing two polymorphs of the same material. We demonstrate the approach by forming $\gamma$-CsPbI3/$\beta$-CsPbI3 perovskite PHJ solar cells. We find that all of the photovoltaic parameters of the PHJ device significantly surpass those of each of the single-phase devices, resulting in a maximum power conversion efficiency of 20.1%. These improvements originate from the efficient passivation of the $\beta$-CsPbI3 by the larger bandgap $\gamma$-CsPbI3, the increase in the built-in potential of the PHJ devices enabled by the energetic alignment between the two phases and the enhanced absorption of light by the PHJ structure. The approach demonstrated here offers new possibilities for the development of photovoltaic devices based on polymorphic materials.

Stability is one of the most important challenges facing organic solar cells (OSC) on their path to commercialization. In the high-performance material system PM6:Y6 studied here, investigate degradation mechanisms of inverted photovoltaic devices. We have identified two distinct degradation pathways: one requires presence of both illumination and oxygen and features a short-circuit current reduction, the other one is induced thermally and marked by severe losses of open-circuit voltage and fill factor. We focus our investigation on the thermally accelerated degradation. Our findings show that bulk material properties and interfaces remain remarkably stable, however, aging-induced defect state formation in the active layer remains the primary cause of thermal degradation. The increased trap density leads to higher non-radiative recombination, which limits open-circuit voltage and lowers charge carrier mobility in the photoactive layer. Furthermore, we find the trap-induced transport resistance to be the major reason for the drop in fill factor. Our results suggest that device lifetimes could be significantly increased by marginally suppressing trap formation, leading to a bright future for OSC.

Ternary organic solar cells (TOSC) are currently under intensive investigation, recently reaching a record efficiency of 17.1%. The origin of the device open-circuit voltage (VOC), already a multifaceted issue in binary OSC, is even more complex in TOSCs. Herein, we investigate two ternary systems with one donor (D) and two acceptor materials (A1, A2) including fullerene and non-fullerene acceptors. By varying the ratio between the two acceptors, we find the VOC to be gradually tuned between those of the two binary systems, D:A1 and D:A2. To investigate the origin of this change, we employ ultra-violet photoemission spectroscopy (UPS) depth profiling, which is used to estimate the photovoltaic gap in the ternary systems. Our results reveal an excellent agreement between the estimated photovoltaic gap and the VOC for all mixing ratios, suggesting that the energetic alignment between the blend components varies depending on the ratio D:A1:A2. Furthermore, our results indicate that the sum of radiative and non-radiative losses in these ternary systems is independent of the blend composition. Finally, we demonstrate the superiority of UPS over X-ray photoemission spectroscopy (XPS) depth profiling in resolving compositional profiles for material combinations with very similar chemical, but dissimilar electronic structures, as common in TOSCs.

Engineering the energetics of perovskite photovoltaic devices through the deliberate introduction of dipoles to control the built-in potential of the devices offers the opportunity to enhance their performance without the need to modify the active layer itself. In this work, we demonstrate how the incorporation of molecular dipoles into the bathocuproine (BCP) hole-blocking layer of inverted perovskite solar cells improves the device open-circuit voltage (VOC) and consequently, its performance. We explore a series of four thiaazulenic derivatives that exhibit increasing dipole moments and demonstrate that these molecules can be introduced into the solution-processed BCP layer to effectively increase the built-in potential within the device, without altering any of the other device layers. As a result the VOC of the devices is enhanced by up to 130 mV with larger dipoles resulting in higher VOCs. To investigate the limitations of this approach, we employ numerical device simulations that demonstrate that the highest dipole derivatives used in this work eliminate all limitations on the VOC stemming from the built-in potential of the device.

X-ray photoemission spectroscopy (XPS) depth profiling using monoatomic Ar+ ion etching sources is a common technique that allows for the probing of the vertical compositional profiles of a wide range of materials. In polymer-based organic photovoltaic devices, it is commonly used to study compositional variations across the interfaces of the organic active layer with charge extraction layers or electrodes, as well as the vertical phase separation within the bulk-heterojunction active layer. It is generally considered that the damage induced by the etching of organic layers is limited to the very top surface, such that the XPS signal (acquired from the top ~10 nm of the layer) remains largely unaffected, allowing for a reliable measurement of the sample composition throughout the depth profile. Herein, we investigate a range of conjugated polymers and quantify the depth of the damage induced by monoatomic etching for Ar+ ion energies ranging from 0.5 keV to 4 keV using argon gas cluster ion beam depth profiling. The results demonstrate that even when etching with the lowest available monoatomic ion energy for as little as 3 s, the damaged polymer material extends deeper into the bulk than the XPS probing depth. We show that the damaged material distorts the compositional information obtained by XPS, resulting in erroneous depth profiles. Furthermore, we propose that only gas cluster ion beam etching sources should be used for depth profiling of organic conjugated polymers, as those induce significantly less damage and maintain the compositional information throughout the entire profile.