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Vehicle digital forensics includes the process of collecting and analysing digital data stored in vehicles to find evidence related to traffic accidents or crime scenes. Through this process, we can reconstruct digital events by recognizing various information such as driver behaviour, driving patterns, vehicle destinations, and smartphones connected to a vehicle. Recently, many vehicle digital forensic studies have been conducted, but few of them have dealt with Android-based infotainment (or audio video navigation, AVN) systems. While many AVN systems adopt Android as the operating system, digital forensics of Android-based AVN systems is not easy. This is because Android-based AVN systems support various storage devices and data formats and have various data sources, making consistent data collection or analysis difficult. In this article, we perform digital forensics on four AVN systems: two Android 4.2.2 Jellybean-based and two Android 4.4.2 KitKat-based, aiming to develop a data acquisition and analysis method appropriate for each Android version. As a data collection method for the AVN system forensics, logical data acquisition is performed on the Jellybean-based systems and physical data acquisition on the KitKat-based systems. For the collected data, we identify and analyse Bluetooth data, navigation data, and system logs individually. Next, we investigate the differences in the storage structure and file location of major digital artefacts depending on the Android versions and show the limitations of the individual data analysis. Finally, we construct a timeline for the driver’s activities by integrating and analysing the diverse artefacts which consist of Bluetooth data, navigation data, and system logs.

We demonstrate a pn heterojunction diode constructed with a n-type ZnO nanowire (NW) and a p-type HgTe nanoparticle (NP) thin film on a SiO2/p-Si substrate. For the pn heterojunction diode, the rectifying characteristics of both the dark current and the photocurrent excited by 633 nm wavelength light were observed, but the photocurrent excited by 325 nm wavelength light possesses Ohmic characteristics. The optoelectronic characteristics of the pn heterojunction diode were compared with those of the ZnO NW and HgTe NP thin film composing it. [ABSTRACT FROM AUTHOR]

The transfer of charge carriers, photogenerated in nanoparticles (NPs), into a single nanowire (NW) is demonstrated in this study by conducting a careful comparison of the optoelectronic characteristics of a ZnO NW with ZnO NPs attached to its surface, a bare ZnO NW and a film of close-packed ZnO NPs. Under the illumination of an above-gap light, the photocurrent taken from the NW with the NPs is remarkably higher in magnitude than that obtained from the bare NW, although the photocurrent is substantially lower for the close-packed NPs. The presence of the absorption band of the NPs in the photoresponse spectrum taken from the NW with the NPs reveals that the transfer of the charge carriers photogenerated in the NPs into the NW dramatically enhances the magnitude of the photocurrent flowing in this NW. Nevertheless, during the transfer, the charge carriers experience trapping and detrapping at the interfaces of the NPs and the NW. [ABSTRACT FROM AUTHOR]

The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 µm wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 µA in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper. [ABSTRACT FROM AUTHOR]