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As continuous development and optimization of negative-capacitance field-effect transistors (NCFETs) are pursued for digital applications, it is also desirable to examine the radio frequency (RF) performance of these devices, especially devices with the metal–ferroelectric–insulator–semiconductor (MFIS) structure. In this article, we use a combination of physics-based modeling and small-signal circuits to investigate the RF performance of MFIS NCFETs using three key device figures of merit: the well-known unity-current-gain (cutoff) frequency ƒT and the well-known maximum oscillation frequency ƒmax, and another important metric specified by gmƒT/ID , where gm is the transconductance and ID is the dc drain current. We find that MFIS NCFETs achieve similar ƒTand ƒmax performance to conventional MOSFETs, but offer a significant advantage in gmƒT/ ID. [ABSTRACT FROM AUTHOR]

As continuous development and optimization of negative-capacitance field-effect transistors (NCFETs) are pursued for digital applications, it is also desirable to examine the radio frequency (RF) performance of these devices, especially devices with the metal–ferroelectric–insulator–semiconductor (MFIS) structure. In this article, we use a combination of physics-based modeling and small-signal circuits to investigate the RF performance of MFIS NCFETs using three key device figures of merit: the well-known unity-current-gain (cutoff) frequency ƒT and the well-known maximum oscillation frequency ƒmax, and another important metric specified by gmƒT/ID , where gm is the transconductance and ID is the dc drain current. We find that MFIS NCFETs achieve similar ƒTand ƒmax performance to conventional MOSFETs, but offer a significant advantage in gmƒT/ ID. [ABSTRACT FROM AUTHOR]