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Your search keyword '"Holm, Jeppe V."' showing total 12 results
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12 results on '"Holm, Jeppe V."'

1. Single nanowire solar cells beyond the Shockley-Queisser limit

Author

Krogstrup, Peter, Jørgensen, Henrik Ingerslev, Heiss, Martin, Demichel, Olivier, Holm, Jeppe V., Aagesen, Martin, Nygard, Jesper, and Morral, Anna Fontcuberta i

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Physics - Optics
Abstract

Light management is of great importance to photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal pn-junction combined with an optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At one sun illumination a short circuit current of 180 mA/cm^2 is obtained, which is more than one order of magnitude higher than what would be predicted from Lambert-Beer law. The enhanced light absorption is shown to be due to a light concentrating property of the standing nanowire as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under one sun illumination., Comment: 19 pages, 3 figures

Published
2013
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12. Single-nanowire solar cells beyond the Shockley-Queisser limit

Author

Krogstrup, Peter, Jorgensen, Henrik Ingerslev, Heiss, Martin, Demichel, Olivier, Holm, Jeppe V., Aagesen, Martin, Nygard, Jesper, and Fontcuberta I. Morral, Anna

Abstract

Light management is of great importance in photovoltaic cells, as it determines the fraction of incident light entering the device. An optimal p-n junction combined with optimal light absorption can lead to a solar cell efficiency above the Shockley-Queisser limit. Here, we show how this is possible by studying photocurrent generation for a single core-shell p-i-n junction GaAs nanowire solar cell grown on a silicon substrate. At 1 sun illumination, a short-circuit current of 180 mA cm(-2) is obtained, which is more than one order of magnitude higher than that predicted from the Lambert-Beer law. The enhanced light absorption is shown to be due to a light-concentrating property of the standing nanowire, as shown by photocurrent maps of the device. The results imply new limits for the maximum efficiency obtainable with III-V based nanowire solar cells under 1 sun illumination.

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