Search

Recent results of La2Zr2O7 (LZO) buffer layer development for YBa2Cu3O7−x (YBCO-) coated conductors are presented. The major achievement is the development of a new precursor solution starting from 2,4-pentanedionates of lanthanum and zirconium leading to the formation of highly textured LZO buffer layers at low annealing temperatures. The preparation of the precursor solution using only a carboxylic acid as the solvent is simple and can be carried out at room temperature under atmospheric conditions. Reproducible highly textured buffer layers were obtained at annealing temperatures as low as 900 °C. The simplicity of the precursor solution preparation and the low annealing temperature (similar to the processing temperature of the YBCO layer) for preparation of an LZO buffer layer are the main advantages of this new process for cost-effective buffer layer deposition on Ni-RABiTS (rolling-assisted biaxially textured substrates).