1. Magnetotransport properties in a compensated semimetal gray arsenic
- Author
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Xinmin Wang, Lingxiao Zhao, Jianqi Li, Zhi-An Ren, Li Lu, Huaixin Yang, Hongmin Weng, Yu-Jia Long, Genfu Chen, Mianqi Xue, Hui Liang, Xi Dai, Chun-Hong Li, Jing Li, Dong Chen, Qiunan Xu, Zhong Fang, and J. He
- Subjects
Physics ,Condensed matter physics ,Magnetoresistance ,Spintronics ,chemistry.chemical_element ,02 engineering and technology ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,01 natural sciences ,Semimetal ,Magnetic field ,Condensed Matter::Materials Science ,symbols.namesake ,Dirac fermion ,chemistry ,Geometric phase ,Electric field ,0103 physical sciences ,symbols ,Condensed Matter::Strongly Correlated Electrons ,010306 general physics ,0210 nano-technology ,Arsenic - Abstract
We report the observation of an extremely large magnetoresistance (up to 15 000 000% at 1.8 K in a magnetic field of 9 T) in a simple chemical element, gray arsenic, in which the magnitude of the magnetoresistance increases as approximately the square of the magnetic field strength without any signs of saturation. The Hall-effect study confirms that gray arsenic is a nearly perfect ``compensated semimetal,'' with a small concentration of very mobile carriers, which lead to an extremely large magnetoresistance. The analysis of Shubnikov--de Haas oscillations reveals a nontrivial \ensuremath{\pi} Berry phase, a strong signature of Dirac fermions with three-dimensional dispersion. Furthermore, in the presence of parallel magnetic and electric fields, a weak antilocalization effect and a pronounced negative longitudinal magnetoresistance, which may be linked to novel topological states, are also observed. These findings which uncover the material's basis in gray arsenic not only open avenues in spintronics and magnetic sensor applications but also provide more platforms to study topological materials.
- Published
- 2017
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