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22 results on '"Hooten, Nicholas C."'

2. The effect of high-Z materials on proton-induced charge collection

Author

Clemens, Michael Andrew, Hooten, Nicholas C., Ramachandran, Vishwa, Dodds, Nathaniel A., and Weller, Robert A.

Subjects
Monte Carlo method -- Usage, Computer-generated environments -- Research, Computer simulation -- Research, Nuclear reactions -- Analysis, Business, Electronics, Electronics and electrical industries
Published
2010

3. Strong Correlation Between Experiment and Simulation for Two-Photon Absorption Induced Carrier Generation

Author

Hales, Joel M., primary, Roche, Nicolas J-H., additional, Khachatrian, Ani, additional, Mcmorrow, Dale, additional, Buchner, Stephen, additional, Warner, Jeffrey, additional, Turowski, Marek, additional, Lilja, Klas, additional, Hooten, Nicholas C., additional, Zhang, En Xia, additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2017
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4. Two-Photon Absorption Induced Single-Event Effects: Correlation Between Experiment and Simulation

Author

Hales, Joel M., primary, Roche, Nicolas J-H., additional, Khachatrian, Ani, additional, McMorrow, Dale, additional, Buchner, Stephen, additional, Warner, Jeffrey, additional, Turowski, Marek, additional, Lilja, Klas, additional, Hooten, Nicholas C., additional, Zhang, En Xia, additional, Reed, Robert A., additional, and Schrimpf, Ronald D., additional

Published
2015
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5. Effects of Energy-Deposition Variability on Soft Error Rate Prediction

Author

Weeden-Wright, Stephanie L., primary, King, Michael P., additional, Hooten, Nicholas C., additional, Bennett, William G., additional, Sierawski, Brian D., additional, Schrimpf, Ronald D., additional, Weller, Robert A., additional, Reed, Robert A., additional, Mendenhall, Marcus H., additional, Fleetwood, Daniel M., additional, Alles, Michael L., additional, and Baumann, Robert C., additional

Published
2015
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6. Single-Event Transient Response of InGaAs MOSFETs

Author

Ni, Kai, primary, Zhang, En Xia, additional, Hooten, Nicholas C., additional, Bennett, William G., additional, McCurdy, Michael W., additional, Sternberg, Andrew L., additional, Schrimpf, Ronald D., additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, Alles, Michael L., additional, Kim, Tae-Woo, additional, Lin, Jianqiang, additional, and del Alamo, Jesus A., additional

Published
2014
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7. Heavy-Ion and Laser Induced Charge Collection in SiGe Channel $p{\rm MOSFETs}$

Author

Zhang, En Xia, primary, Samsel, Isaak K., additional, Hooten, Nicholas C., additional, Bennett, William G., additional, Funkhouser, Erik D., additional, Ni, Kai, additional, Ball, Dennis R., additional, McCurdy, Michael W., additional, Fleetwood, Daniel M., additional, Reed, Robert A., additional, Alles, Michael L., additional, Schrimpf, Ronald D., additional, Linten, Dimitri, additional, and Mitard, Jerome, additional

Published
2014
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8. TID and Displacement Damage Resilience of 1T1R ${\rm HfO}_2/{\rm Hf}$ Resistive Memories

Author

Weeden-Wright, Stephanie L., primary, Bennett, William G., additional, Hooten, Nicholas C., additional, Zhang, En Xia, additional, McCurdy, Michael W., additional, King, Michael P., additional, Weller, Robert A., additional, Mendenhall, Marcus H., additional, Alles, Michael L., additional, Linten, Dimitri, additional, Jurczak, Malgorzata, additional, Degraeve, Robin, additional, Fantini, Andrea, additional, Reed, Robert A., additional, Fleetwood, Daniel M., additional, and Schrimpf, Ronald D., additional

Published
2014
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11. Characterization of the Two-Photon Absorption Carrier Generation Region in Bulk Silicon Diodes

Author

VANDERBILT UNIV NASHVILLE TN, Hooten, Nicholas C., VANDERBILT UNIV NASHVILLE TN, and Hooten, Nicholas C.

Abstract

The pulsed laser has been a popular experimental method for interrogating single event effects (SEEs) in microelectronic devices and circuits for many years [1]. While particle accelerator testing is still considered to be the standard test method, the expense and availability of particle accelerator facilities suitable for SEE testing can often be limiting factors in thoroughly characterizing devices and circuits. Particle accelerator testing can also be destructive since devices can be exposed to a very high fluence of radiation, potentially resulting in device degradation. In addition to being more readily available and cost effective, laser testing offers deep insight into the spatial and temporal characteristics of SEEs that can be difficult or impossible to determine with broadbeam particle accelerator based test methods. Also, assuming the laser pulse energy is not excessively high, device degradation can be completely avoided. Because of these factors, SEE laser testing is an important resource for the the radiation effects community. SEE laser testing is often performed using laser light wavelengths above the bandgap. In this regime, Beer's law absorption dominates, and it can be assumed that for every one energetic photon incident on the semiconductor, one electron-hole pair will be created [1]. However, one limitation of choosing this approach is that the total laser penetration will exponentially attenuate beginning at the surface of the device under test (DUT). This requires that devices be tested from the topside, through any device overlayer materials that may be present. As metallization densities increase in device overlayers, topside laser testing can become difficult or impossible, due to shadowing effects. This was one limitation of topside laser testing that lead to the development of two-photon absorption (TPA) SEE laser testing [2]., Sponsored in part by the National Aeronautics and Space Administration (NASA).

Published
2011

14. The Quad-Path Hardening Technique for Switched-Capacitor Circuits

Author

Atkinson, Nicholas M., primary, Holman, W. Timothy, additional, Kauppila, Jeffrey S., additional, Loveless, T. Daniel, additional, Hooten, Nicholas C., additional, Witulski, Arthur F., additional, Bhuva, Bharat L., additional, Massengill, Lloyd W., additional, Zhang, En Xia, additional, and Warner, Jeffrey H., additional

Published
2013
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16. Charge Collection Mechanisms in AlGaN/GaN MOS High Electron Mobility Transistors

Author

Samsel, Isaak K., primary, Zhang, En Xia, additional, Hooten, Nicholas C., additional, Funkhouser, Erik D., additional, Bennett, William G., additional, Reed, Robert A., additional, Schrimpf, Ronald D., additional, McCurdy, Michael W., additional, Fleetwood, Daniel M., additional, Weller, Robert A., additional, Vizkelethy, Gyorgy, additional, Sun, Xiao, additional, Ma, Tso-Ping, additional, Saadat, Omair I., additional, and Palacios, Tomas, additional

Published
2013
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18. Dynamic Modeling of Radiation-Induced State Changes in \ HfO_2/\ Hf 1T1R RRAM.

Author

Bennett, William G., Hooten, Nicholas C., Schrimpf, Ronald D., Reed, Robert A., Alles, Michael L., Zhang, En Xia, Weeden-Wright, Stephanie L., Linten, Dimitri, Jurczak, Malgorzata, and Fantini, Andrea

Subjects
*DYNAMIC random access memory, *COMPUTER-aided design, *ELECTRIC potential, *COMPLEMENTARY metal oxide semiconductors, *PARTICLES, *METAL oxide semiconductor field-effect transistors
Abstract

Single and multiple-event upsets in \ HfO_2/\ Hf one transistor, one resistor (1T1R) resistive random access memory (RRAM) structures are modeled dynamically using 3-D technology computer-aided design (TCAD) simulations. A dynamic single-event compact model is presented that allows direct correlation of the ion-generated voltage transient across the RRAM and the change in RRAM resistance. Experiments and modeling demonstrate an exponential relationship between the susceptibility of the RRAM and the applied voltage. Two implementations of the model are also presented including hardening voltage-susceptible resistive memory technologies and the impact of highly scaled access transistors. [ABSTRACT FROM PUBLISHER]

Published
2014
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19. TID and Displacement Damage Resilience of 1T1R HfO_2/Hf Resistive Memories.

Author

Weeden-Wright, Stephanie L., Bennett, William G., Hooten, Nicholas C., Zhang, En Xia, McCurdy, Michael W., King, Michael P., Weller, Robert A., Mendenhall, Marcus H., Alles, Michael L., Linten, Dimitri, Jurczak, Malgorzata, Degraeve, Robin, Fantini, Andrea, Reed, Robert A., Fleetwood, Daniel M., and Schrimpf, Ronald D.

Subjects
RANDOM access memory, COMPLEMENTARY metal oxide semiconductors, OXIDES, ELECTRIC potential
Abstract

RRAM memory cells demonstrate resilience to ionizing dose and displacement damage, despite the presence of a nonhardened access transistor. Degradation in RRAM performance was not observed until large displacement damage doses and complete functionality was regained by cycling. A significant reduction in both the high and low resistance memory states and a complete collapse of the resistive window was observed for large proton fluences in RRAMs tested. Degradation in resistance states is associated with the generation of additional vacancies, which leads to (an) additional filament(s) in parallel to the existing conductive filament. Additional vacancies from displacement damage in the oxide of the resistive element do not permanently degrade device operation. The low resistance state is recovered to the pre-irradiation resistance through cycling at nominal high-speed switching conditions. Recovery of the resistive window to pre-irradiation values is obtained by applying longer write pulses which migrate remnants of radiation-induced filaments. [ABSTRACT FROM PUBLISHER]

Published
2014
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20. Heavy-Ion and Laser Induced Charge Collection in SiGe Channel pMOSFETs.

Author

Zhang, En Xia, Samsel, Isaak K., Hooten, Nicholas C., Bennett, William G., Funkhouser, Erik D., Ni, Kai, Ball, Dennis R., McCurdy, Michael W., Fleetwood, Daniel M., Reed, Robert A., Alles, Michael L., Schrimpf, Ronald D., Linten, Dimitri, and Mitard, Jerome

Subjects
HEAVY ions, LIGHT absorption, QUANTUM well devices, POLARITY (Chemistry), SILICON, COMPLEMENTARY metal oxide semiconductors
Abstract

Heavy-ion and two-photon-absorption (TPA) experiments have been performed on ultra-thin implant-free quantum well SiGe channel pMOSFETs. Both the single-event-transient pulse magnitude and polarity can depend strongly on the location of the strike along the device channel. The polarity inversion occurs primarily because very limited transient charge collection occurs below the quantum well, as confirmed by two-dimensional TCAD simulation. [ABSTRACT FROM PUBLISHER]

Published
2014
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21. Single- and Multiple-Event Induced Upsets in HfO_2/Hf 1T1R RRAM.

Author

Bennett, William G., Hooten, Nicholas C., Schrimpf, Ronald D., Reed, Robert A., Mendenhall, Marcus H., Alles, Michael L., Bi, Jinshun, Zhang, En Xia, Linten, Dimitri, Jurzak, Malgorzata, and Fantini, Andrea

Subjects
*SINGLE event effects, *NONVOLATILE random-access memory, *HEAVY ions, *ELECTRIC transients, *ELECTRIC potential
Abstract

Single-event upsets in \bf HfO\bf 2/{\bf Hf} 1T1R Resistive Random Access Memory (RRAM) structures are experimentally demonstrated by generating current transients in the access transistors of the memory cells. The relationship between the single-event upset threshold of the RRAM and the applied voltage is exponential, which is verified using TPA laser analysis and heavy-ion irradiation. Multiple-Event Upsets (MEUs) also occur, where individual ions incrementally change the RRAM’s resistance until their cumulative effect causes an upset. Single-event models are presented that allow direct correlation of the voltage across the RRAM, caused by the ion-generated current transient, and the change in RRAM resistance. The RRAM is vulnerable only in the high resistance state, when a voltage capable of writing to the cell is applied to the bit line. This is approximately 0.5% of the memory element’s operation time, leading to relatively low projected upset rates. [ABSTRACT FROM PUBLISHER]

Published
2014
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22. Single Particle Displacement Damage in Silicon.

Author

Auden, Elizabeth C., Weller, Robert A., Mendenhall, Marcus H., Reed, Robert A., Schrimpf, Ronald D., Hooten, Nicholas C., and King, Michael P.

Subjects
PARTICLES (Nuclear physics), ENERGY dissipation, SILICON spectra, SILICON diodes, NUCLEAR fission, NUCLEAR reactions
Abstract

Single particle displacement damage events are reported in silicon diodes irradiated with ^252Cf and ^241Am. In situ measurements of reverse current show the result of displacement damage incurred from individual fission fragments in ^252Cf irradiated diodes. Discrete increases in reverse current exceeding 20 fA are measured. The increases are temporally correlated with fission fragment-induced ionization events. The ratio of the damage factor associated with fission fragments to the damage factor associated with alpha particles is in good agreement with the ratio of non-ionizing energy loss calculated for fission fragments to NIEL calculated for alpha particles. [ABSTRACT FROM AUTHOR]

Published
2012
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