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45 results on '"Hossain, MD Maksudul"'

23. Comparisons and Evaluations of Silicon and Wide Band Gap Devices at Cryogenic Temperature

Author

Wei, Yuqi, Hossain, Md Maksudul, and Mantooth, H. Alan

Abstract

In this article, the static and dynamic characterizations for semiconductors with different materials, including silicon (Si), silicon carbide (SiC), and gallium nitride (GaN), are evaluated and compared at room temperature and cryogenic temperature (liquid nitrogen temperature). For static characterizations, the on-state resistance and threshold voltage are evaluated. For dynamic characterizations, the turn-on switching loss, turn-off switching loss, and dynamic on-state resistance (Rds(on)) are evaluated. The results demonstrate that Si and GaN based semiconductors have improved performances with lower on-state resistance and faster switching speed at low temperature operations. For SiC based semiconductors, the on-state resistance increases significantly at cryogenic temperature. The switching speed is reduced dramatically for the evaluated 1.2 kV SiC metal oxide semiconductor field effect transistors (MOSFETs) at cryogenic temperature. This makes it less attractive for cryogenic applications. For the evaluated 650 V and 900 V SiC MOSFETs, the switching speed remains almost unchanged at low temperature. GaN high electron mobility transistor (HEMT) demonstrates a fast turn-on switching speed at low temperature, where the device's dv/dt and di/dt are almost doubled when compared with room temperature. In addition, the dynamic Rds(on) of the evaluated GaN HEMTs also decreases at low temperatures. The evaluation results can serve as guidelines for cryogenic power electronics applications. Meanwhile, the future work for semiconductors cryogenic characterizations is discussed.

Published
2023
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44. Improved Compact Modeling of High Voltage Gallium Nitride High Electron Mobility Transistors

Author

Hossain, Md Maksudul

Subjects
Compact Modeling, Cryogenic, Gallium Nitride, HEMT, Power Electronics, Semiconductor, Electronic Devices and Semiconductor Manufacturing, Power and Energy
Abstract

Since power converters shape a wide range of power electronic applications, the 'heart' of these conversions, such as solid-state switches, is crucial for achieving higher power density, lower loss, and higher efficiency operations. Although the limitations imposed by silicon-based power devices have been reduced by introducing novel devices such as IGBTs and super junction MOSFETs to allow for broader applications, solutions beyond silicon have presented a continuous challenge to the device engineers. Driving these converters at a higher switching frequency allows for higher power density. However, to support a higher frequency and operating temperature, superior materials, e.g., wide bandgap materials, are also needed. Two such materials, namely silicon carbide (SiC) and gallium nitride (GaN), thanks to their excellent material properties like higher mobility, higher breakdown electric field, and lower leakage, are paving the way to improved efficiency and high power density with broader functionality. Although SiC plays a vital role in a wider range of power electronics applications, the use of SiC outside of standard operation regions, e.g., cryogenic temperature (

Published
2022

45. Metal Oxide Semiconductor / Graphene Heterojunction Based Sensors

Author

Hossain, Md Maksudul

Abstract

Graphene, a two-dimensional material with very high carrier mobility, has drawn much attention for sensing chemical species. It is atomically thin hexagonal arrangement of carbon where each atom is attached to 3 neighboring carbon atoms. The presence of π* and π bonds can be attributed for it many remarkable properties. Some of these properties are high mobility, modulation of carrier concentration and Fermi level by electrical, optical, and chemical means, low 1/f and thermal noise, and very high surface to volume ratio to name a few making graphene a potential candidate for sensing material. However, to utilize these amazing properties for practical applications a reliable synthesis of high quality, large area graphene is needed. Chemical Vapor Deposition (CVD) based synthesis offers reliable, scalable, and inexpensive method to make low defect, continuous, large area, and thinner graphene with the ability to transfer graphene on any desirable substrate. In this work, high quality single layer graphene has been synthesized by CVD for sensing applications. The growth process was optimized to produce good quality monolayer graphene as characterized by Raman spectroscopy. CH4 has been used as precursor gas for the growth at 1035°C. Since graphene work function can be varied electrically or chemically, the Schottky Barrier Height (SBH) at Graphene/Semiconductor interface also varies accordingly affecting the carrier transport across the barrier. In this work, we used transition metal oxide (e.g. WO3, In2O3, and ZnO) along with graphene to study the behavior of graphene/metal oxide heterojunction in sensing NO2 and NH3 because both of these metal oxides and graphene are individually very sensitive to NO2 and NH3. Our motivation was to see if the sensitivity and response time improves in case we use them together.

Published
2017

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