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Resistive random access memory (RRAM) with ultrafast and multilevel switching is extremely promising for next‐generation nonvolatile memory. Here, ultrafast unipolar resistive switchings (≈540 ps) with high off/on resistance ratio (≈104) are obtained in yttrium iron garnet Y3Fe5O12 (YIG)‐based resistive memory on n‐Si substrate. The sub‐nanosecond operation is also successfully performed up to 85 °C with an off/on resistance ratio of ≈103. In addition, by using different compliance currents for the set process, five discrete resistance levels with ultrafast switchings among them are achieved and the multilevel states show reliable retention (>104 s). The large, stable, reproducible, and reliable switching behaviors of the Au/YIG/n‐Si RRAM cell shows its great potential for ultrafast multilevel memory applications. By fabricating an Au/YIG/n‐Si resistive random access memory (RRAM) on silicon, ultrafast unipolar resistive switchings (≈540 ps) with high off/on resistance ratio are demonstrated at both room temperature and 85 °C. Five discrete resistance levels with ultrafast switchings are obtained and show reliable retention. Such an ultrafast multilevel unipolar RRAM is promising for ultrafast multilevel memory applications. [ABSTRACT FROM AUTHOR]

Solid-state dielectric film capacitors with high-energy-storage density will further promote advanced electronic devices and electrical power systems toward miniaturization, lightweight, and integration. In this study, the influence of interface and thickness on energy storage properties of SrTiO 3 (STO) films grown on La 0.67 Sr 0.33 MnO 3 (LSMO) electrode are systematically studied. The cross-sectional high resolution transmission electron microscopy reveals an ion interdiffusion layer and oxygen vacancies at the STO/LSMO interface. The capacitors show good frequency stability and increased dielectric constant with increasing STO thickness (410-710 nm). The breakdown strength (E b ) increases with decreasing STO thickness and reaches 6.8 MV/cm. Interestingly, the E b under positive field is enhanced significantly and an ultrahigh energy density up to 307 J/cm 3 with a high efficiency of 89% is realized. The enhanced E b may be related to the modulation of local electric field and redistribution of oxygen vacancies at the STO/LSMO interface. Our results should be helpful for potential strategies to design devices with ultrahigh energy density.