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Excitons -- elementary excitations formed by bound electron-hole pairs -- govern the optical properties and excited-state dynamics of materials. In two-dimensions (2D), excitons are theoretically predicted to have a linear energy-momentum relation with a non-analytic discontinuity in the long wavelength limit, mimicking the dispersion of a photon. This results in an exciton that behaves like a massless particle, despite the fact that it is a composite boson composed of massive constituents. However, experimental observation of massless excitons has remained elusive. In this work, we unambiguously experimentally observe the predicted linear exciton dispersion in freestanding monolayer hexagonal boron nitride (hBN) using momentum-resolved electron energy-loss spectroscopy. The experimental result is in excellent agreement with our theoretical prediction based on ab initio many-body perturbation theory. Additionally, we identify the lowest dipole-allowed transition in monolayer hBN to be at 6.6 eV, illuminating a long-standing debate about the band gap of monolayer hBN. These findings provide critical insights into 2D excitonic physics and open new avenues for exciton-mediated superconductivity, Bose-Einstein condensation, and high-efficiency optoelectronic applications.

Moir\'e heterobilayers exhibiting spatially varying band alignment and electron and hole localization that can be precisely controlled through the twist angle have emerged as exciting platforms for studying complex quantum phenomena. While most heterobilayers of transition metal dichalcogenides (TMDs) have a type II band alignment, the introduction of type I band alignment could enable stronger light-matter coupling and enhanced radiative emission. Here, we show through a combination of first-principles GW plus Bethe Salpeter equation (GW-BSE) calculations and time- and angle-resolved photoemission spectroscopy (tr-ARPES) measurements that contrary to previous understanding, the MoSe2/WS2 heterobilayer has a type I band alignment at large twist angles and simultaneous regions of type I and type II band alignment due to the structural reconstruction in different high symmetry regions at small twist angles. In tr-ARPES, consistent with our calculations, a long-lived electron population is only observed in MoSe2 for samples with large twist angles, while in samples with small twist angles, signals from two distinct long-lived excitons are observed. Moreover, despite the near degeneracy of the conduction bands of the two layers, no excitonic hybridization occurs, suggesting that previously observed absorption peaks in this material arise from lattice reconstruction. Our findings clarify the complex energy landscape in MoSe2/WS2 heterostructures, where the coexistence of type I and type II band alignment opens the door to moir\'e-tunable optoelectronic devices with intrinsic lateral heterojunctions.

Many-body electron-hole interactions are essential for understanding non-linear optical processes and ultrafast spectroscopy of materials. Recent first principles approaches based on nonequilibrium Green's function formalisms, such as the time-dependent adiabatic GW (TD-aGW) approach, can predict the nonequilibrium dynamics of excited states including electron-hole interactions. However, the high dimensionality of the electron-hole kernel poses significant computational challenges for scalability. Here, we develop a data-driven low-rank approximation for the electron-hole kernel, leveraging localized excitonic effects in the Hilbert space of crystalline systems. Through singular value decomposition (SVD) analysis, we show that the subspace of non-zero singular values, containing the key information of the electron-hole kernel, retains a small size even as the k-grid grows, ensuring computational feasibility with extremely dense k-grids for converged calculations. Utilizing this low-rank property, we achieve at least 95% compression of the kernel and an order-of-magnitude speedup of TD-aGW calculations. Our method, rooted in physical interpretability, outperforms existing machine learning approaches by avoiding intensive training processes and eliminating time-accumulated errors, providing a general framework for high-throughput, nonequilibrium simulation of light-driven dynamics in materials., Comment: 14 pages, 8 figures

Representation learning for the electronic structure problem is a major challenge of machine learning in computational condensed matter and materials physics. Within quantum mechanical first principles approaches, Kohn-Sham density functional theory (DFT) is the preeminent tool for understanding electronic structure, and the high-dimensional wavefunctions calculated in this approach serve as the building block for downstream calculations of correlated many-body excitations and related physical observables. Here, we use variational autoencoders (VAE) for the unsupervised learning of high-dimensional DFT wavefunctions and show that these wavefunctions lie in a low-dimensional manifold within the latent space. Our model autonomously determines the optimal representation of the electronic structure, avoiding limitations due to manual feature engineering and selection in prior work. To demonstrate the utility of the latent space representation of the DFT wavefunction, we use it for the supervised training of neural networks (NN) for downstream prediction of the quasiparticle bandstructures within the GW formalism, which includes many-electron correlations beyond DFT. The GW prediction achieves a low error of 0.11 eV for a combined test set of metals and semiconductors drawn from the Computational 2D Materials Database (C2DB), suggesting that latent space representation captures key physical information from the original data. Finally, we explore the interpretability of the VAE representation and show that the successful representation learning and downstream prediction by our model is derived from the smoothness of the VAE latent space, which also enables the generation of wavefunctions on arbitrary points in latent space. Our work provides a novel and general machine-learning framework for investigating electronic structure and many-body physics.

Topological surface states (TSS) in the prototypical topological insulator (TI) Bi2Se3 are frequently characterized using optical probes, but electron-hole interactions and their effect on surface localization and optical response of the TSS remain unexplored. Here, we use ab initio calculations to understand excitonic effects in the bulk and surface of Bi2Se3. We identify multiple series of chiral excitons that exhibit both bulk and TSS character, due to exchange-driven mixing. Our results address fundamental questions about the degree to which electron-hole interactions can relax the topological protection of surface states and dipole selection rules for circularly polarized light in TIs by elucidating the complex intermixture of bulk and surface states excited in optical measurements and their coupling to light., Comment: 13 pages, 4 figures

The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model., Comment: 7 pages

The strategy of band convergence of multi-valley conduction bands or multi-peak valence bands has been widely used to search or improve thermoelectric materials. However, the phonon-assisted intervalley scatterings due to multiple band degeneracy are usually neglected in the thermoelectric community. In this work, we investigate the (thermo)electric properties of non-polar monolayer $\beta$- and $\alpha$-antimonene considering full mode- and momentum-resolved electron-phonon interactions. We also analyze thoroughly the selection rules on electron-phonon matrix-elements using group-theory arguments. Our calculations reveal strong intervalley scattering between the nearly degenerate valley states in both $\beta$- and $\alpha$-antimonene, and the commonly-used deformation potential approximation neglecting the dominant intervalley scattering gives inaccurate estimations of the electron-phonon scattering and thermoelectric transport properties. By considering full electron-phonon interactions based on the rigid-band approximation, we find that, the maximum value of the thermoelectric figure of merits $zT$ at room temperature reduces to 0.37 in $\beta$-antimonene, by a factor of 5.7 comparing to the value predicted based on the constant relaxation-time approximation method. Our work not only provides an accurate prediction of the thermoelectric performances of antimonenes that reveals the key role of intervalley scatterings in determining the electronic part of zT, but also showcases a computational framework for thermoelectric materials., Comment: 7 figures