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Because of the increasing emphasis on environmental concerns, there has been a growing demand for lower fuel consumption in modern transportation applications. To reduce fuel comsumption, higher efficiency, higher power density power converters are desired. The new generation of wide bandgap (WBG) power semiconductor devices pushs the switching frequency and output power of the electric system in transportation to a higher level thanks to their higher blocking voltage, higher operating frequency, and smaller parasitic elements. With benefits such as size reudcetion, costs saving, and reliability improvement, integration technologies have been widely adopted in power electronic systems, especially with the emergence of WBG semiconductor devices. These improvements will futher translate into reduced fuel consumption, extended operating range, and increased passenger compartment. Transportation applications pose a challenging environment for converter integration. The fast switching speed and the high blocking voltage of WBG semiconductor devices also put forward higher requirements for converter integration. First, the power converters used in transportation applications are often powered from the batteries that support multiple loads. During load changes, crank, or jump-start, undesired transients exist, which requires the power converters to be capable of operating under a wide-input-voltage range. This requirement results in a very limited design region of acceptance, making the converter hard to handle uncertainties. However, the integration process might bring large uncertainties, such as material property changes. This phenomenon can degrade converter performance or even cause design failures. Besides, the power converters for transporation applications often work in harsh environment, such as high ambient temperature or low air density. The former can lead to overheated and the latter degrades insulation strength, both of which hinder high power density design. Moreover, with the advent of all kinds of portable devices, converters are required to deliver more power. The introduction of universal serial bus (USB) power delivery (PD) extends the delivered power. To meet the specification, the power converters should provide a wide-output-voltage range, which brings challenges to the converter design. Furthermore, the charger is usually fed by an ac voltage of more than 100 V, which is then stepped down to 5 V – 20 V. The high step-down ratio increases the converter loss. To address the wide-input-voltage and high-temperature challenges, a dual-output, PCB-embedded transformer based active-clamp Flyback (ACF) gate-drive power supply (GDPS) for automotive applications is proposed. It has been demonstrated that the PCB-embedding technique effectively improves converter power density. The final prototype achieves a power density of 53.2 W/in3, a peak efficiency of 89.7 %, a transformer input-output capacitance of 9.7 pF, an input-voltage range of 9.9 V – 28 V, and a maximum operating temperature at low-line (LL) voltage of 105 °C and 115 °C at high-line (HL) voltage. Yet the above unit failed to meet all of the design targets due to the material property degradation in transformer. This degradation is caused by the mechanical stress induced in the integration process. To investigate its impact on wide-input-voltage converter design, several PCB-embedded magnetic boards are fabricated with different core materials and stress levels. Based on the analysis, experimentally derived correction factors are proposed and applied to the models used in the multi-objective optimization (MDO) process. The improved design successfully achieves the targeted wide-input-votlage range. When aircrafts climb during flight, air density reduces and the breakdown voltage decreases correspondingly. The insulation design becomes a challenge for the gate driver for SiC-based airborne applications. To provide sufficient insulation strength and achieve high power density simultaneously, a Paschen curve based insulation co-ordination is proposed. Electric-field control methodology is applied to the layout design. By properly designing the field control plates, the peak electric field has been shifted from the air to fr4 material that features much higher dielectric strength. The proposed gate driver attains a small size of 128.7 mm × 61.2 mm × 23.8 mm. Partial discharging tests are conducted in an altitude chamber. The experimental result shows that the proposed gate driver provides sufficient insulation strength at 50, 000 ft. To tackle the wide-output-voltage range and high-step-down ratio challenges in the USB-C PD charger in airborne applications, a LLC converter with PCB-winding based transformer with built-in leakage inductance is presented. A flying-capacitor based voltage divider (FCVD) switching bridge is proposed to replace the conventional half-bridge or full-bridge switching bridge. The propsed FCVD shows a current reduction of over 50 % than the conventional half-bridge with the same circuit elements. The prototype achieves a high efficiency of 90.3 % to 93.2 % over 5 V to 20 V outputs, and a high power density of 73.2 W/ in³, which is almost two time larger than the state-of-the-art power density. Partial discharging tests are also conducted in an altitude chamber. A partial discharing inspection voltage of 800 V is found at 10, 000 ft, which is much higher than the requirement. Doctor of Philosophy Because of the increasing emphasis on environmental concerns, there has been a growing demand for lower fuel consumption in modern transportation applications. The new generation of wide bandgap (WBG) power semiconductor devices and various integration technologies enable electronic systems in transportation to achieve higher efficiency and higher power density. These improvement will futher translate into reduced fuel consumption, extended operating range, and increased passenger compartment. However, transportation applications put more requirements on power converter designs. This dissertation, therefore, focusing on addressing the integration challenges in high power density WBG-based circuits for transportation applications from the aspects of wide-input-voltage range, material properties degradation, harsh environment, and wide-output-voltage range together with high step-down ratio. To meet the wide-input-voltage and high temperature requirements in automotive applications, a dual-output, PCB-embedded transformer based active-clamp Flyback (ACF) dc-dc converter is proposed. The final prototype achieves a power density of 53.2 W/in3, a peak efficiency of 89.7 %, a transformer input-output capacitance of 9.7 pF, an input-voltage range of 9.7 V â€" 28 V, and a maximum operating temperature at low-line (LL) voltage of 105 °C and 115 °C at high-line (HL) voltage. Yet the above unit failed to meet all of the design targets due to the material property degration in PCB-embedded transformer. This degradation is caused by the mechanical stress during integration process. To investigate its impact on automotive converter, several PCB-embedded magnetic boards are fabricated with different core materials and stress levels. Based on the analysis, experimentally derived correction factors are proposed and applied to the models used in the multiobjective optimization process. The improved design successfully achieves the targeted wide-input-votlage range. When aircrafts climb during flight, air density reduces and thus insulation strength decreases correspondingly. Instead of using oversized altitude correction factors provided by IEC standards, a Paschen curve based insulation co-ordination is proposed. Electric-field control methodology is applied to the gate driver layout. The proposed gate driver attains a small size of 128.7 mm × 61.2 mm × 23.8 mm. Partial discharging test is conducted in an altitude chamber. The experimental result shows that the proposed gate driver provide sufficient insulation strength at 50, 000 ft. To tackle the wide-output-voltage range and high-step-down ratio challenges in the USB-C PD charger in airborne applications, a LLC converter with PCB-winding based transformer with built-in leakage inductance is presented. A flying-capacitor-based voltage divider (FCVD) switching bridge is proposed to replace the conventional half-bridge or full-bridge switching bridge. The propsed FCVD shows a current reduction of over 50 % than the conventional half-bridge with the same circuit design. The prototype achieves a high efficiency of 90.3 % to 93.2 % over 5 V to 20 V outputs, and a high power density of 73.2 W/ in3, which is more than two time larger than the state-of-the-art power density. Partial discharging tests are also conducted in an altitude chamber. A partial discharing inspection voltage (PDIV) of 800 V is found at 10, 000 ft, which is much higher than the requirement.

In recent years, there is a clear trend toward increasing the demand for electric power in high-power applications. High-power converters are making major impacts on these high-power applications. Recent breakthroughs in Silicon Carbide (SiC) materials and fabrication techniques have led to the development of high-voltage, high-frequency power devices, which are at the heart of high-power converters. SiC metal-oxide semiconductor field-effect transistors (MOSFETs) have advantages over silicon (Si) devices due to their higher breakdown voltage, higher thermal capability, and lower on-state resistance. However, their fast switching frequency and high blocking voltage bring challenges to the gate-drive circuit design. The gate driver of SiC-MOSFETs requires a power supply that provides a high-voltage, high-density design, a low input-output capacitance (CI/O) transformer design, good voltage regulation, as well as good resilience to faults to enable safe and fast operation. In this thesis, a power supply that supplies multiple gate drivers for 10 kV SiC MOSFETs is presented. A transformer design approach with a single turn at the primary side is proposed. A 20 kV insulation is achieved by the primary HV cable insulation across a toroid transformer core. The CI/O is designed less than 2 pF to mitigate the Common-Mode (CM) noise. A circuit topology analysis is performed and the inductor/capacitor/capacitor/inductor (LCCL) – inductor/capacitor (LC) circuit is selected. This circuit allows Zero-Voltage Switching (ZVS) at full operation range. A Resonant-Current-Bus (RCB) is built at the transformer primary side to achieve load-independence. Master of Science Wide-bandgap semiconductor devices have attracted widespread attention due to their superior performance compared to their silicon devices counterpart. To utilize its full benefits, this thesis presents a complete design and optimization of a gate-drive power supply that supplies multiple gate drivers for high-voltage, high-speed semiconductor devices. Four objectives, including high density at high voltage, good noise mitigation, fair voltage regulation, resilience to faults have been achieved. During the design procedure, different topology candidates are introduced and compared, after which a resonant topology is selected. The wide-bandgap semiconductor devices are utilized to reduce the size and losses. Hardware assembly is shown and experimental testing results are provided in the end to verify the design.