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Broadband absorption in the visible spectrum is essential in optoelectronic applications that involve power conversion such as photovoltaics and photocatalysis. Most ultrathin broadband absorbers use parasitic plasmonic structures that maximize absorption using surface plasmons and/or Fabry-Perot cavities, which limits the weight efficiency of the device. Here, we show the theoretical and experimental realization of an unpatterned/planar semiconductor thin-film absorber based on monolayer transition metal dichalcogenides (TMDCs). We experimentally demonstrate an average total absorption in the visible range (450 nm - 700 nm) of > 70% using > 4 nm of semiconductor absorbing materials scalable over large areas with vapor phase growth techniques. Our analysis suggests that a power conversion efficiency (PCE) of 15.54% and a specific power > 300 W g^-1 may be achieved in a photovoltaic cell based on this metamaterial absorber.

The demand for high-efficiency photovoltaic systems necessitates innovations that transcend the efficiency limitations of single-junction solar cells. This study investigates a tandem photovoltaic architecture comprising a top-cell with a transition metal dichalcogenide (TMDC) superlattice absorber and a bottom-cell of crystalline silicon (c-Si), focusing on optimizing the light absorption and electrical performance of the combined structure. Through the transfer matrix method and electrical simulations, we optimized the geometry of the superlattice, determining that a siz-layer MoSe2 configuration with a 40 nm SiO2 antireflective layer maximizes photon absorption while mitigating additional weight and preserving the cell's structural integrity. The results show that the optimized TMDC superlattice significantly improves the PCE of the tandem design to 28.96%, and increase of 5.68% over the original single-junction c-Si solar cell's efficiency. This advancement illustrates the potential of TMDC material in next-generation solar cells and presents a promising avenue for the development of highly efficient, tandem photovoltaic systems via van der Waals integration of the top cell on c-Si

Excitonic semiconductors have been a subject of research for photovoltaic applications for many decades. Among them, the organic polymers and small molecules based solar cells have now exceeded 19% power conversion efficiency (PCE). While organic photovoltaics (OPVs) are approaching maturity, the advent of strongly excitonic inorganic semiconductors such as two-dimensional transition metal dichalcogenides (TMDCs) has renewed interest in excitonic solar cells due to their high-optical constants, stable inorganic structure and sub-nm film thicknesses. While several reports have been published on TMDC based PVs, achieving power conversion efficiencies higher than 6% under one-sun AM1.5G illumination has remained challenging. Here, we perform a full optical and electronic analysis of design, structure and performance of monolayer TMDC based, single-junction excitonic PVs. Our computational model with optimized properties predicts a PCE of 9.22% in a superlattice device structure. Our analysis suggests that, while the PCE for 2D excitonic solar cells may be limited to < 10%, a specific power > 100 W g-1 may be achieved with our proposed designs, making them attractive in aerospace, distributed remote sensing, and wearable electronics., Comment: Manuscript plus supplement