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Your search keyword '"Huang, Haimeng"' showing total 136 results
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136 results on '"Huang, Haimeng"'

11. A novel field plate with arcuate end for improving GaN HEMTs.

Author

Cheng, Junji, Liu, Jiaping, Luo, Yuanjie, He, Gongtao, Meng, Fanxin, He, Zhaofeng, Yi, Bo, Huang, Haimeng, Yang, Hongqiang, and Wang, Zhiming

Subjects
MODULATION-doped field-effect transistors, POWER semiconductors, BREAKDOWN voltage, ELECTRONIC circuits, GALLIUM nitride, POWER electronics, ELECTRIC fields
Abstract

A new field plate (FP) is proposed for gallium nitride high‐electron‐mobility transistors (HEMTs). It features an innovative arcuate end (AE), which allows the induced charges that originally gathered at the FP end to diffuse over a wider area. Hence, not only is the electric field in the channel at the gate edge alleviated due to the induced charges, but also that concentrated at the FP end is reduced by means of AE. The simulation results indicate that by upgrading a source FP with AE, HEMT gains a 99% increase in breakdown voltage while remaining unaltered in specific on‐resistance. It also gets a 43.41% decrease in power loss during one cycle while maintaining the same breakdown voltage, which greatly contributes to enhance the efficiency of power electronic circuits. [ABSTRACT FROM AUTHOR]

Published
2024
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32. Investigation of a Novel Enhancement-Mode Al0.25Ga0.75N/AlN/AlXGa(1-X)N/GaN MIS-HEMT for High Vth and Low Ron,sp

Author

Yi, Bo, Xu, Yi, Cheng, Junji, Huang, Haimeng, Kong, Moufu, and Yang, Hongqiang

Abstract

In this article, we proposed a composite-barrier-metal–insulator–semiconductor-high electron mobility transistor (CB-MIS-HEMT), in which a thick AlxGa $_{({1}-{x}{)}}\text{N}$ with small Al mol fraction is implemented in the gate region to achieve both high threshold voltage ( ${V}_{\text {th}}{)}$ and high electron mobility. A Al $_{{0}.{25}}$ Ga $_{{0}.{75}}\text{N}$ /AlN, working as a second barrier, is set on the AlxGa $_{({1}-{x}{)}}\text{N}$ -layer to maintain high 2DEG density in the access region. The thick AlxGa $_{({1}-{x}{)}}\text{N}$ in the gate region reduces the mobility degradation effects caused by the interface charges, acoustic phonon scattering, and surface roughness scattering. Combined with small Almol fraction design, both low specific ON-resistance (Ron,sp)and high ${V}_{\text {th}}$ can be obtained simultaneously. An analytical model for the electron density in both the lower and upper channels as well as ${V}_{\text {th}}$ is presented, which matches very well with the experimentally calibrated TCAD simulation. For a 600-V design, it shows that the electron mobility in the lower channel can be improved to 1255 cm2/ $\text{V}\cdot \text{s}$ , and at ${V}_{\text {th}}$ around 2.5 V, Ron,sp of the CB-MIS-HEMT can be reduced by 33.6% compared to a conventional recess-gate MIS-HEMT.

Published
2023
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