94 results on '"Huang, Jun Z."'
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2. Hole Mobility Model for Si Double-Gate Junctionless Transistors
3. Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors
4. Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
5. A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
6. Small-Signal and Large-Signal RF Characterization and Modeling of Low and High Voltage FinFETs for 14/16 nm Technology Node SoCs
7. Scalable GaSb/InAs tunnel FETs with non-uniform body thickness
8. P-Type Tunnel FETs With Triple Heterojunctions
9. High-Performance Complementary III-V Tunnel FETs with Strain Engineering
10. Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method
11. High-Frequency Characterization and Modeling of Low and High Voltage FinFETs for RF SoCs
12. Cryogenic Characterization and Model Extraction of 5nm Technology Node FinFETs
13. Quantum Transport Simulation of III-V TFETs with Reduced-Order Method
14. Characterization and Modeling of 14-/16-nm FinFET-Based LDMOS
15. Characterization and Modeling of 14-/16-nm FinFET-Based LDMOS
16. Rigorous Modeling and Investigation of Low-Field Hole Mobility in Silicon and Germanium Gate-All-Around Nanosheet Transistors
17. Self-Heating characterization and modeling of 5nm technology node FinFETs
18. DEEP INSIGHT INTO CHANNEL ENGINEERING OF SUB-3 NM-NODE P-TYPE NANOSHEET TRANSISTORS WITH A QUANTUM TRANSPORT MODEL
19. Quantum Transport Simulation of III-V TFETs with Reduced-Order $$ \varvec{k} \cdot \varvec{p} $$ k · p Method
20. Atomistic modeling trap-assisted tunneling in hole tunnel field effect transistors.
21. Performance degradation of superlattice MOSFETs due to scattering in the contacts.
22. Impact of Body Thickness and Scattering on III–V Triple Heterojunction TFET Modeled With Atomistic Mode-Space Approximation
23. Piezoelectric Tunnel FET With a Steep Slope
24. Design Considerations for Si- and Ge-Stacked Nanosheet pMOSFETs Based on Quantum Transport Simulations
25. Piezoelectric hetero-junction tunnel FET with staggered gap at off-state and broken gap at on-state
26. Exploring the Designs of p-Type Piezoelectric FinFETs Based on NEGF Transport Simulations Comprising Phonon Scattering
27. OFF Current Suppression by Gate-gontrolled Strain in The N-type GaAs Piezoelectric FinFETs
28. ON Current Enhancement by Gate Controlled Strain in The InAs n-Type Piezoelectric Tunnel FETs
29. Quantum Transport Study of Si Ultrathin-Body Double-Gate pMOSFETs:${I}$– ${V}$,${C}$– ${V}$, Energy Delay, and Parasitic Effects
30. Performance Enhancement by Gate Tunable Strain in p-type Piezoelectric FinFETs
31. Strain Optimization in Silicon P-Type Double-Gate MOSFET at 7nm Channel Length
32. Robust mode space approach for atomistic modeling of realistically large nanowire transistors
33. Influence of channel length, thickness, and crystal orientation in ultra-scaled double-gate pMOSFETs
34. Hole mobility model for Si double-gate junctionless transistors
35. Sb- and Al-free ultra-high-current tunnel FET designs
36. A high-current InP-channel triple heterojunction tunnel transistor design
37. A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
38. Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions
39. Scalable GaSb/InAs Tunnel FETs With Nonuniform Body Thickness
40. Performance degradation of superlattice MOSFETs due to scattering in the contacts
41. P-Type Tunnel FETs With Triple Heterojunctions
42. Quantum Transport Study of Si Ultrathin-Body Double-Gate pMOSFETs: ${I}$ – ${V}$ , ${C}$ – ${V}$ , Energy Delay, and Parasitic Effects.
43. Extremely high simulated ballistic currents in triple-heterojunction tunnel transistors
44. Exploring channel doping designs for high-performance tunneling FETs
45. High-current InP-based triple heterojunction tunnel transistors
46. High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction
47. Design and Simulation of GaSb/InAs 2D Transmission-Enhanced Tunneling FETs
48. Finite difference schemes for k ⋅ p models: A comparative study
49. Applying CEM techniques to solve nano-scale quantum transport problems
50. A multi-scale modeling of junctionless field-effect transistors
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