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Gadolinium oxide nanocrystal (Gd2O3–NC)memories treated by postdeposition rapid thermal annealing were investigated. Bandgap offset performed by a crystallized Gd2O3-NCdot surrounded by amorphous Gd2O3dielectrics is successfully demonstrated and proven by the transmission electron microscopy images and electron diffraction pattern. The Gd2O3-NCmemory exhibits a hysteresis memory window of 4Vand NC dot density of more than 8.5×1011cm−2. In addition, the formation of Gd2O3-NCand charge loss characteristics on annealing temperature were analyzed and optimized at 850°C. The data endurance of 104program and erase cycling for a sufficient memory window (2V)was also observed for the Gd2O3nanocrystal memory.