367 results on '"Huang, Tiao-Yuan"'
Search Results
2. A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology
3. Novel poly-silicon nanowire field effect transistor for biosensing application
4. A junctionless SONOS nonvolatile memory device constructed with in situ-doped polycrystalline silicon nanowires
5. Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique
6. Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer
7. Impacts of SiN deposition parameters on n-channel metal-oxide-semiconductor field-effect-transistors
8. A carbon nanotube field effect transistor with tunable conduction-type by electrostatic effects
9. Treatment of organic wastewater discharged from semiconductor manufacturing process by ultraviolet/hydrogen peroxide and biodegradation
10. Fabry-Perot-type antireflective coating for deep-ultraviolet binary photomask applications
11. Breakdown Characteristics of Ultra-Thin Gate Oxides Caused by Plasma Charging
12. Improved low temperature characteristics of P-channel MOFSETs with Si[subscript 1-x]Ge[subscript x] raised source and drain
13. High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel
14. Plasma-induced charging damage in ultrathin (3-nm) gate oxides
15. Degradation Mechanisms of MILC P-Channel Poly-Si TFTs under Dynamic Hot-Carrier Stress Using a Novel Test Structure
16. High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts
17. Simultaneous etching of polysilicon materials with different doping types by low-damage transformer-coupled plasma technique
18. Electrical properties of metal–ferroelectric–insulator–semiconductor using sol–gel derived SrBi 2Ta 2O 9 film and ultra-thin Si 3N 4 buffer layer
19. The extraction of MOSFET gate capacitance from S-parameter measurements
20. RF CMOS technology for MMIC
21. Improvement in Ferroelectric Properties of Sol-Gel Derived SrBi2Ta2O9 thin films with seeding layers
22. Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation
23. Fabrication and Characterization of Poly-Si Schottky-Barrier Thin-Film Transistors
24. A Multilevel Metal Interconnect Technology with Intra-Metal Air-Gap for Quarter-Micron-and-Beyond High-Performance Processes
25. The effects of microcrystalline silicon film structure on low-high-low band-gap thin film transistor
26. Effects of titanium and tantalum adhesion layers on the properties of sol-gel derived SrBi[sub 2]Ta[sub 2]O[sub 9] thin films.
27. Electrical properties of shallow p[sup +]-n junction using boron-doped Si[sub 1-x]Ge[sub x] layer deposited by ultrahigh vacuum chemical molecular epitaxy.
28. Reliability of ultrathin gate oxides for ULSI devices
29. Downscaling Metal—Oxide Thin-Film Transistors to Sub-50 nm in an Exquisite Film-Profile Engineering Approach
30. A Film-Profile-Engineered 3-D InGaZnO Inverter Technology With Systematically Tunable Threshold Voltage
31. Film-profile-engineered IGZO thin-film transistors with gate/drain offset for high voltage operation
32. Fabrication and RTN characteristics of gate-all-around poly-Si junctionless nanowire transistors
33. Short-channel ZnON thin-film transistors with film profile engineering
34. Short-channel BEOL ZnON thin-film transistors with superior mobility performance
35. High-gain, low-voltage BEOL logic gate inverter built with film profile engineered IGZO transistors
36. High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect Mobility
37. Impact of gate dielectrics and oxygen annealing on tin-oxide thin-film transistors
38. Impact of thermal oxygen annealing on the properties of tin oxide films and characteristics of p-type thin-film transistors
39. Improving Electrical Performances of$p$ -Type SnO Thin-Film Transistors Using Double-Gated Structure
40. Novel InGaZnO inverters utilizing film profile engineering
41. Fabrication of Sub-50nm ZnO thin-film transistors with film profile engineering and laminated hardmask structure
42. Effects of Gate Dielectric and Process Treatments on the Electrical Characteristics of IGZO TFTs With Film Profile Engineering
43. Fabrication of High-Performance Poly-Si Thin-Film Transistors With Sub-Lithographic Channel Dimensions
44. Characteristics of Poly-Si Nanowire Thin Film Transistors with Double-Gated Structures
45. A new self-aligned subtractive gate process for high-voltage and complementary polycrystalline silicon thin-film transistors.
46. Submicron organic thin-film transistors fabricated by film profile engineering method
47. Novel BEOL InGaZnO R-load-type logic-gate technology
48. 100-nm IGZO Thin-Film Transistors With Film Profile Engineering
49. Effects of Ga2O3deposition power on electrical properties of cosputtered In–Ga–Zn–O semiconductor films and thin-film transistors
50. Fabrication and characterization of field-effect transistors with suspended-nanowire channels
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.