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42 results on '"Huang, Weichuan"'

1. Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions

Author

Xiao, Can, Sun, Huawei, Cheng, Luming, Devaux, Xavier, Ferri, Anthony, Huang, Weichuan, Desfeux, Rachel, Li, Xiao-Guang, Migot, Sylvie, Chshiev, Mairbek, Rauf, Sajid, Qi, Yajun, Wang, Ruilong, Zhang, Tianjin, Yang, Changping, Liang, Shiheng, and Lu, Yuan

Subjects
Condensed Matter - Materials Science
Abstract

Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices. The ferroelectric control of spin-polarization at ferromagnet (FM)/ferroelectric organic (FE-Org) interface by electrically switching the ferroelectric polarization of the FE-Org has been recently realized. However, there is still a lack of understanding of the transport properties in OMFTJs, especially the interplay between the ferroelectric domain structure in the organic barrier and the spin-polarized electron tunneling through the barrier. Here, we report on a systematic study of the temperature dependent transport behavior in La0.6Sr0.4MnO3/PVDF/Co OMFTJs. It is found that the thermal fluctuation of the ferroelectric domains plays an important role on the transport properties. When T>120K, the opposite temperature dependence of resistance for in up and down ferroelectric polarization states results in a rapid diminishing of tunneling electroresistance (TER). These results contribute to the understanding of the transport properties for designing high performance OMFTJs for memristor and spintronics applications.

Published
2020
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2. Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions

Author

Gao, Xue, Liang, Shiheng, Ferri, Anthony, Huang, Weichuan, Rouxel, Didier, Devaux, Xavier, Li, Xiao-Guang, Yang, Hongxin, Chshiev, Mairbek, Desfeux, Rachel, Da Costa, Antonio, Hu, Guichao, Stoffel, Mathieu, Nachawaty, Abir, Jiang, Chunping, Zeng, Zhongming, Liu, Jian-Ping, Yang, Hui, and Lu, Yuan

Subjects
Physics - Applied Physics, Condensed Matter - Materials Science
Abstract

We report on the fabrication of organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we found that the ferroelectric properties of the OMFTJ are considerably improved compared to that with pure PVDF barrier. It can lead to a tunneling electroresistance (TER) of about 450% at 10K and 100% at room temperature (RT), which is much higher than that of the pure PVDF based device (70% at 10K and 7% at RT). OMFTJs based on the PVDF:Fe3O4 nanocomposite could open new functionalities in smart multiferroic devices via the interplay of the magnetism of nanoparticle with the ferroelectricity of the organic barrier.

Published
2020
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3. Coherent electric field manipulation of Fe3+ spins in PbTiO3

Author

Liu, Junjie, Laguta, Valentin V, Inzani, Katherine, Huang, Weichuan, Das, Sujit, Chatterjee, Ruchira, Sheridan, Evan, Griffin, Sinéad M, Ardavan, Arzhang, and Ramesh, Ramamoorthy

Subjects
Quantum Physics, Physical Sciences
Abstract

Magnetoelectrics, materials that exhibit coupling between magnetic and electric degrees of freedom, not only offer a rich environment for studying the fundamental materials physics of spin-charge coupling but also present opportunities for future information technology paradigms. We present results of electric field manipulation of spins in a ferroelectric medium using dilute ferric ion-doped lead titanate as a model system. Combining first-principles calculations and electron paramagnetic resonance (EPR), we show that the ferric ion spins are preferentially aligned perpendicular to the ferroelectric polar axis, which we can manipulate using an electric field. We also demonstrate coherent control of the phase of spin superpositions by applying electric field pulses during time-resolved EPR measurements. Our results suggest a new pathway toward the manipulation of spins for quantum and classical spintronics.

Published
2021

7. The competing spin orders and fractional magnetization plateaus of classical Heisenberg model on Shastry-Sutherland lattice: Consequence of long-range interactions

Author

Huo, Liu, Huang, Weichuan, Yan, Zhibo, Jia, Xingtao, Gao, Xingsen, Qin, Minghui, and Liu, Junming

Subjects
Condensed Matter - Strongly Correlated Electrons, Physics - Classical Physics
Abstract

The competing spin orders and fractional magnetization plateaus of classical Heisenberg model with long-range interactions on a Shastry-Sutherland lattice are investigated using Monte Carlo simulations, in order to understand the fascinating spin ordering sequence observed in TmB4 and other rare-earth tetraborides. The simulation reproduces the experimental 1/2 magnetization plateau at low temperature by considering multifold long range interactions. It is found that more local long range interactions can be satisfied in the 1/2 plateau state than those in the 1/3 plateau state, leading to the stabilization of the extended 1/2 plateau. A mean-field theory on the spin ground states in response to magnetic field is proposed, demonstrating the simulation results. When the energies of the Neel state and the collinear state are degenerated, the former state is more likely to be stabilized due to the competitions among the local collinear spin orders. The present work provides a comprehensive proof of the phase transitions to the Neel state at nonzero temperature, in complimentary to the earlier predictions for the Fe-based superconductors., Comment: 19 Pages, 6 figures

Published
2012
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11. Inherent Spin–Polarization Coupling in a Magnetoelectric Vortex

Author

Das, Sujit, Laguta, Valentyn, Inzani, Katherine, Huang, Weichuan, Liu, Junjie, Chatterjee, Ruchira, McCarter, Margaret R., Susarla, Sandhya, Ardavan, Arzhang, Junquera, Javier, and Ramesh, Ramamoorthy

Subjects
Mechanical Engineering, General Materials Science, Bioengineering, General Chemistry, Condensed Matter Physics
Abstract

Solid-state materials are currently being explored as a platform for the manipulation of spins for spintronics and quantum information science. More broadly, a wide spectrum of ferroelectric materials, spanning from inorganic oxides to polymeric systems such as PVDF, present a different approach to explore quantum phenomena in which the spins are set and manipulated with electric fields. Using dilute Fe3+-doped ferroelectric PbTiO3-SrTiO3 superlattices as a model system, we demonstrate intrinsic spin-polarization control of spin directionality in complex ferroelectric vortices and skyrmions. Electron paramagnetic resonance (EPR) spectra show that the spins in the Fe3+ ion are strongly coupled to the local polarization and preferentially aligned perpendicular to the ferroelectric polar c axis in this complex vortex structure. The effect of polarization-spin directionality is corroborated by first-principles calculations, demonstrating the variation of the spin directionality with the polar texture and offering the potential for future quantum analogues of macroscopic magnetoelectric devices.

Published
2022

14. Coherent electric field manipulation of Fe 3+ spins in PbTiO 3

Author

Liu, Junjie, primary, Laguta, Valentin V., additional, Inzani, Katherine, additional, Huang, Weichuan, additional, Das, Sujit, additional, Chatterjee, Ruchira, additional, Sheridan, Evan, additional, Griffin, Sinéad M., additional, Ardavan, Arzhang, additional, and Ramesh, Ramamoorthy, additional

Published
2021
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17. Temperature dependence of transport mechanisms in organic multiferroic tunnel junctions

Author

Xiao, Can, primary, Sun, Huawei, additional, Cheng, Luming, additional, Devaux, Xavier, additional, Ferri, Anthony, additional, Huang, Weichuan, additional, Desfeux, Rachel, additional, Li, Xiao-Guang, additional, Migot, Sylvie, additional, Chshiev, Mairbek, additional, Rauf, Sajid, additional, Qi, Yajun, additional, Wang, Ruilong, additional, Zhang, Tianjin, additional, Yang, Changping, additional, Liang, Shiheng, additional, and Lu, Yuan, additional

Published
2020
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18. Enhancement of ferroelectric performance in PVDF:Fe3O4 nanocomposite based organic multiferroic tunnel junctions

Author

Gao, Xue, primary, Liang, Shiheng, additional, Ferri, Anthony, additional, Huang, Weichuan, additional, Rouxel, Didier, additional, Devaux, Xavier, additional, Li, Xiao-Guang, additional, Yang, Hongxin, additional, Chshiev, Mairbek, additional, Desfeux, Rachel, additional, Da Costa, Antonio, additional, Hu, Guichao, additional, Stoffel, Mathieu, additional, Nachawaty, Abir, additional, Jiang, Chunping, additional, Zeng, Zhongming, additional, Liu, Jian-Ping, additional, Yang, Hui, additional, and Lu, Yuan, additional

Published
2020
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19. An adaptive finite-difference method for accurate simulation of first-arrival traveltimes in heterogeneous media

Author

Ziqiang Pan, Qiao Baoping, Huang Weichuan, and Cao Chengyin

Subjects
0209 industrial biotechnology, Eikonal equation, Computer science, Applied Mathematics, Finite difference method, Plane wave, 020206 networking & telecommunications, 02 engineering and technology, Solver, Grid, Fermat's principle, Seismic wave, Physics::Geophysics, Computational Mathematics, symbols.namesake, 020901 industrial engineering & automation, 0202 electrical engineering, electronic engineering, information engineering, symbols, Model building, Algorithm
Abstract

Accurate simulation of first-arrival traveltimes is the foundation of seismic depth imaging and macro velocity model building for full waveform inversion. In this paper, an adaptive finite-difference method based on Gauss-Seidel iterations has been developed to achieve a more accurate calculation of first-arrival traveltimes in heterogeneous media. The plane wave, spherical wave and refracted wave approximations of local eikonal solver are used to simulate the seismic traveltimes, respectively. Then, a novel updating strategy based on Fermat principle is proposed to make the accurate choice of factor and traveltime, adaptively. The new algorithm can guarantee the high accuracy of traveltime simulation at the grid point not only near the source point, but also at a great distance from the source point. With the combination of global fast sweeping method, the traveltime simulation is unconditionally stable and all possible propagating directions of different seismic waves are considered to describe the complex propagating process due to the velocity model with sharp variations. Several numerical examples were solved to demonstrate that the adaptive finite-difference method can fulfill the accurate, efficient and robust simulation of first-arrival traveltimes.

Published
2021

22. Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM

Author

Chen, Zhiwei, primary, Huang, Weichuan, additional, Zhao, Wenbo, additional, Hou, Chuangming, additional, Ma, Chao, additional, Liu, Chuanchuan, additional, Sun, Haoyang, additional, Yin, Yuewei, additional, and Li, Xiaoguang, additional

Published
2018
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23. Quenching of Spin Polarization Switching in Organic Multiferroic Tunnel Junctions by Ferroelectric “Ailing-Channel” in Organic Barrier

Author

Liang, Shiheng, primary, Yu, Zhongwei, additional, Devaux, Xavier, additional, Ferri, Anthony, additional, Huang, Weichuan, additional, Yang, Huaiwen, additional, Desfeux, Rachel, additional, Li, Xiaoguang, additional, Migot, Sylvie, additional, Chaudhuri, Debapriya, additional, Yang, Hongxin, additional, Chshiev, Mairbek, additional, Yang, Changping, additional, Zhou, Bin, additional, Fang, Jinghuai, additional, Mangin, Stéphane, additional, and Lu, Yuan, additional

Published
2018
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33. Ferroelectric Control of Organic/Ferromagnetic Spinterface

Author

Liang, Shiheng, primary, Yang, Hongxin, additional, Yang, Huaiwen, additional, Tao, Bingshan, additional, Djeffal, Abdelhak, additional, Chshiev, Mairbek, additional, Huang, Weichuan, additional, Li, Xiaoguang, additional, Ferri, Anthony, additional, Desfeux, Rachel, additional, Mangin, Stéphane, additional, Lacour, Daniel, additional, Hehn, Michel, additional, Copie, Olivier, additional, Dumesnil, Karine, additional, and Lu, Yuan, additional

Published
2016
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37. Ultrahigh Energy Density in SrTiO3Film Capacitors

Author

Hou, Chuangming, Huang, Weichuan, Zhao, Wenbo, Zhang, Dalong, Yin, Yuewei, and Li, Xiaoguang

Abstract

Solid-state dielectric film capacitors with high-energy-storage density will further promote advanced electronic devices and electrical power systems toward miniaturization, lightweight, and integration. In this study, the influence of interface and thickness on energy storage properties of SrTiO3(STO) films grown on La0.67Sr0.33MnO3(LSMO) electrode are systematically studied. The cross-sectional high resolution transmission electron microscopy reveals an ion interdiffusion layer and oxygen vacancies at the STO/LSMO interface. The capacitors show good frequency stability and increased dielectric constant with increasing STO thickness (410–710 nm). The breakdown strength (Eb) increases with decreasing STO thickness and reaches 6.8 MV/cm. Interestingly, the Ebunder positive field is enhanced significantly and an ultrahigh energy density up to 307 J/cm3with a high efficiency of 89% is realized. The enhanced Ebmay be related to the modulation of local electric field and redistribution of oxygen vacancies at the STO/LSMO interface. Our results should be helpful for potential strategies to design devices with ultrahigh energy density.

Published
2017
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38. Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3Multiferroic Tunnel Junctions

Author

Huang, Weichuan, Lin, Yue, Yin, Yuewei, Feng, Lei, Zhang, Dalong, Zhao, Wenbo, Li, Qi, and Li, Xiaoguang

Abstract

A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents at least four resistance states in a single memory cell and therefore opens an avenue for the development of the next generation of high-density nonvolatile memory devices. Here, using the all-perovskite-oxide La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3as a model MFTJ system, we demonstrate asymmetrical MnTi sublattice intermixing at the La0.7Sr0.3MnO3/BaTiO3interfaces by direct local measurements of the structure and valence, which reveals the relationship between ferroelectric polarization directions and four-resistance states, and the low temperature anomalous tunneling behavior in the MFTJ. These findings emphasize the crucial role of the interfaces in MFTJs and are quite important for understanding the electric transport of MFTJs as well as designing high-density multistates storage devices.

Published
2016
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40. Ultrafast Multilevel Switching in Au/YIG/n‐Si RRAM.

Author

Chen, Zhiwei, Huang, Weichuan, Zhao, Wenbo, Hou, Chuangming, Ma, Chao, Liu, Chuanchuan, Sun, Haoyang, Yin, Yuewei, and Li, Xiaoguang

Subjects
NONVOLATILE random-access memory, SWITCHING theory, YTTRIUM iron garnet, GOLD, SILICON, ELECTRIC resistance
Abstract

Resistive random access memory (RRAM) with ultrafast and multilevel switching is extremely promising for next‐generation nonvolatile memory. Here, ultrafast unipolar resistive switchings (≈540 ps) with high off/on resistance ratio (≈104) are obtained in yttrium iron garnet Y3Fe5O12 (YIG)‐based resistive memory on n‐Si substrate. The sub‐nanosecond operation is also successfully performed up to 85 °C with an off/on resistance ratio of ≈103. In addition, by using different compliance currents for the set process, five discrete resistance levels with ultrafast switchings among them are achieved and the multilevel states show reliable retention (>104 s). The large, stable, reproducible, and reliable switching behaviors of the Au/YIG/n‐Si RRAM cell shows its great potential for ultrafast multilevel memory applications. By fabricating an Au/YIG/n‐Si resistive random access memory (RRAM) on silicon, ultrafast unipolar resistive switchings (≈540 ps) with high off/on resistance ratio are demonstrated at both room temperature and 85 °C. Five discrete resistance levels with ultrafast switchings are obtained and show reliable retention. Such an ultrafast multilevel unipolar RRAM is promising for ultrafast multilevel memory applications. [ABSTRACT FROM AUTHOR]

Published
2019
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41. Inherent Spin-Polarization Coupling in a Magnetoelectric Vortex.

Author

Das S, Laguta V, Inzani K, Huang W, Liu J, Chatterjee R, McCarter MR, Susarla S, Ardavan A, Junquera J, Griffin SM, and Ramesh R

Abstract

Solid-state materials are currently being explored as a platform for the manipulation of spins for spintronics and quantum information science. More broadly, a wide spectrum of ferroelectric materials, spanning from inorganic oxides to polymeric systems such as PVDF, present a different approach to explore quantum phenomena in which the spins are set and manipulated with electric fields. Using dilute Fe 3+ -doped ferroelectric PbTiO 3 -SrTiO 3 superlattices as a model system, we demonstrate intrinsic spin-polarization control of spin directionality in complex ferroelectric vortices and skyrmions. Electron paramagnetic resonance (EPR) spectra show that the spins in the Fe 3+ ion are strongly coupled to the local polarization and preferentially aligned perpendicular to the ferroelectric polar c axis in this complex vortex structure. The effect of polarization-spin directionality is corroborated by first-principles calculations, demonstrating the variation of the spin directionality with the polar texture and offering the potential for future quantum analogues of macroscopic magnetoelectric devices.

Published
2022
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42. Ultrahigh Energy Density in SrTiO 3 Film Capacitors.

Author

Hou C, Huang W, Zhao W, Zhang D, Yin Y, and Li X

Abstract

Solid-state dielectric film capacitors with high-energy-storage density will further promote advanced electronic devices and electrical power systems toward miniaturization, lightweight, and integration. In this study, the influence of interface and thickness on energy storage properties of SrTiO 3 (STO) films grown on La 0.67 Sr 0.33 MnO 3 (LSMO) electrode are systematically studied. The cross-sectional high resolution transmission electron microscopy reveals an ion interdiffusion layer and oxygen vacancies at the STO/LSMO interface. The capacitors show good frequency stability and increased dielectric constant with increasing STO thickness (410-710 nm). The breakdown strength (E b ) increases with decreasing STO thickness and reaches 6.8 MV/cm. Interestingly, the E b under positive field is enhanced significantly and an ultrahigh energy density up to 307 J/cm 3 with a high efficiency of 89% is realized. The enhanced E b may be related to the modulation of local electric field and redistribution of oxygen vacancies at the STO/LSMO interface. Our results should be helpful for potential strategies to design devices with ultrahigh energy density.

Published
2017
Full Text
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