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We propose a scheme for achieving basic quantum gates using ultracold polar molecules in pendular states. The qubits are encoded in the YbF molecules trapped in an electric field with a certain gradient and coupled by the dipole–dipole interaction. The time-dependent control sequences consisting of multiple pulses are considered to interact with the pendular qubits. To achieve high-fidelity quantum gates, we map the control problem for the coupled molecular system into a Markov decision process and deal with it using the techniques of deep reinforcement learning (DRL). By training the agents over multiple episodes, the optimal control pulse sequences for the two-qubit gates of NOT, controlled NOT, and Hadamard are discovered with high fidelities. Moreover, the population dynamics of YbF molecules driven by the discovered gate sequences are analyzed in detail. Furthermore, by combining the optimal gate sequences, we successfully simulate the quantum circuit for entanglement. Our findings could offer new insights into efficiently controlling molecular systems for practical molecule-based quantum computing using DRL. [ABSTRACT FROM AUTHOR]

p-type semiconductors are significant for integrated nanoelectronics. Tellurium (Te), a mono-elemental material, is a p-type semiconductor with high mobility. Its outstanding performance renders it widely applicable in the fields of electronics and optoelectronics. However, the wafer-scale fabrication of Te thin films is challenging. In this study, we reported an ion-bean sputtered Te thin film and investigated the effects of annealing temperatures. Annealing-induced crystallization kinetics were assessed through Raman spectroscopy, x-ray diffraction, and atomic force microscopy. After annealing, the film's conductivity increased from 10−5 to 10−4 S and mobility from 18 to 53 cm2 V−1 s−1. Dual AC resonance tracking switching spectroscopy piezoelectric force microscopy is used to investigate piezo/ferroelectric properties. The coercive voltages are −2 and 4 V respectively, and the effective piezoelectric coefficient (d33) is 40 pm/V. Butterfly and phase-switching loops demonstrate its possible ferroelectricity. The Te thin film has potential applications in optoelectronics, nonvolatile memory devices, and neuromorphic computation. [ABSTRACT FROM AUTHOR]

The realization of a controllable transparent conducting system with selective light transparency is crucial for exploring many of the most intriguing effects in top‐illuminated optoelectronic devices. However, the performance is limited by insufficient electrical conductivity, low work function, and vulnerable interface of traditional transparent conducting materials, such as tin‐doped indium oxide. Here, it is reported that two‐dimensional (2D) titanium carbide (Ti3C2Tx) MXene film acts as an efficient transparent conducting electrode for the lead sulfide (PbS) colloidal quantum dots (CQDs) photodiode with controllable near infrared transmittance. The solution‐processed interface engineering of MXene and PbS layers remarkably reduces the interface defects of MXene/PbS CQDs and the carrier concentration in the PbS layer. The stable Ti3C2Tx/PbS CQDs photodiodes give rise to a high specific detectivity of 5.51 × 1012 cm W−1 Hz1/2, a large dynamic response range of 140 dB, and a large bandwidth of 0.76 MHz at 940 nm in the self‐powered state, ranking among the most exceptional in terms of comprehensive performance among reported PbS CQDs photodiodes. In contrast with the traditional photodiode technologies, this efficient and stable approach opens a new horizon to construct widely used infrared photodiodes with CQDs and MXenes. [ABSTRACT FROM AUTHOR]

Hafnia-based films are gaining prominence in the advancement of next-generation memory and logic devices. Their significance arises from their pronounced ferroelectricity at the nanoscale and their synergy with silicon processes. However, there are questions surrounding how their polarization stability responds to changes in temperature. In our study, we synthesized (111)-oriented Hf0.5Zr0.5O2 (HZO) ferroelectric thin films through pulsed laser deposition. This process corroborated the domain-matching epitaxy growth mechanism. We observed that HZO films possess distinct temperature-dependent ferroelectric traits. Specifically, a decrease in temperature triggers a fall in remanent polarization. Notably, the coercive field diminishes initially, only to rebound around the 200 K mark. Utilizing low-temperature in situ x-ray diffraction techniques, we have identified that lattice strain, induced by the differing thermal expansion of the films due to temperature changes, alters the migration rate of oxygen vacancies, resulting in the observed variations in remanent polarization and coercive field as reported in the article. Our findings deepen the understanding of ferroelectric mechanisms inherent in hafnia-based oxide thin films. [ABSTRACT FROM AUTHOR]

2D materials are considered as potential candidates for the next generation of optoelectronic materials. However, their optical absorption is typically weak due to thickness limitations, greatly restricting the photodetection capabilities of devices. To enhance the photoelectric gain of 2D materials or devices and improve detection sensitivity, various modulation methods such as strain, electric field, and magnetic field are commonly introduced. Among them, surface acoustic wave (SAW) represents a unique and effective modulation approach. In this study, photodetectors are fabricated based on few‐layer MoS2 on a SAW delay line on a LiTaO3 substrate. The interaction between SAW and MoS2 successfully manipulates the optoelectronic performance of the MoS2‐based devices. Under the influence of SAW, the dark current of the devices is significantly reduced by more than two orders of magnitude, while the photocurrent remains almost unchanged, resulting in excellent photoresponse performance. The devices provide a promising pathway for high‐performance optoelectronic applications and reveal a new possibility for acoustic devices in optoelectronics. [ABSTRACT FROM AUTHOR]