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Your search keyword '"Huang, Zhisen"' showing total 24 results
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24 results on '"Huang, Zhisen"'

18. Minimized Junction Leakage Current for Nanoscale Mosfet Applications

Author

Hu Zhanyuan, Yang Huishan, Bai Wenqi, Kunghong Lee, Huang Zhisen, and Wang Shiming

Subjects
Materials science, business.industry, Junction leakage, Hardware_PERFORMANCEANDRELIABILITY, Threshold voltage, Reduction (complexity), CMOS, Hardware_GENERAL, Power consumption, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Nanoscale mosfet, Current (fluid), business, Leakage (electronics)
Abstract

Ultra-low leakage current development for extreme high threshold voltage (EHVT) devices had become a challenge for the low power consumption application in advanced CMOS technology. This paper experimentally shows the reduction of leakage current by engineering Halo and LDD implant to achieve the EHVT device via 28nm high-k metal-gate (HKMG). The drain (I off ) and bulk (I offb ) leakage current exhibit 75% and 88% reduction comparing with regular sample at the same on-state current (Ion). The leakage current mechanisms as well as the correlation with experimental conditions have been discussed in detailed in this paper. The ultra-low leakage device has great potential for low power application.

Published
2020

19. Development of Low Leakage Current in Extreme PFET Device

Author

Wang Shiming, Bai Wenqi, Huang Zhisen, Yang Huishan, Kunhong Lee, and Hu Zhanyuan

Subjects
Materials science, business.industry, Low leakage, Hardware_PERFORMANCEANDRELIABILITY, Iddq testing, CMOS, Hardware_GENERAL, Power consumption, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Current (fluid), business, Hardware_LOGICDESIGN, Electronic circuit, Leakage (electronics)
Abstract

Leakage current has become a challenge to power consumption in advanced CMOS technology. This paper reveals the low leakage of extreme PFET via Halo and LDD optimization, in 28nm high-k metal-gate (HKMG). In the same on-state current (I ON ), the drain (I OFFD ) and bulk (I OFFB ) leakage current are reduced to ~30 pA/um (~75%) and ~10 pA/um (~88%), respectively. The mechanisms of leakage reduction have been discussed in detailed. This device has great potential for IDDQ reduction via CMOS circuits design.

Published
2020

23. Analysis of Shenzhen Port Container Development Countermeasures under the Background of Guangdong-Hong Kong-Macao Greater Bay Area

Author

Chen Xin-wei, Li You-lin, Huang ZhiSen, and Wu ZhiTe

Subjects
Container (abstract data type), Environmental science, Water resource management, Port (computer networking), Bay
Abstract

The construction of the Guangdong-Hong Kong-Macao Greater Bay Area brings new opportunities for the future development of Shenzhen Port, but it also faces many challenges. Due to the large number of ports in the Bay Area, large and small, rich port resources, leading to increasingly fierce competition between ports. Therefore, the article mainly to Hong Kong and Macao Grand Bay Area as the research of environment, analyzes the status quo of Shenzhen Port Container development, followed by The exponential smoothing model is used to predict the container throughput of Shenzhen Port, finally, on the basis of the prediction results, relevant countermeasures are put forward for the better development of container transportation in Shenzhen Port, and the development path of Shenzhen Port in the context of the Greater Bay Area is sought.

Published
2021

24. Effect on the diffraction efficiency from the surface absorption of echelle grating in Littrow mounting.

Author

Huang Z, Zhang Q, Wang J, and Zhang S

Abstract

[Opt. Express31, 26156202310.1364/OE.495525] shows an anomalous absorption of the echelle grating in TM polarization light near the pseudo-Brewster angle. On top of that, more generally, we relate the absorptions of echelle grating to the Al materials with an absorption spectral band. The blaze diffraction efficiencies (DEs), absorption strengths and electric field distributions, and the energy of non-blaze diffraction orders of the echelle are analyzed in detail. The computing reveals that the interaction between the incident light for TM polarization and the echelle structure leads to amplifying the absorption strength of Al materials with an absorption spectral band from visible to near IR. The deepening groove depth not only suppresses the absorption strength of the Al-echelle grating under TM polarization closer to the absorption spectra of Al materials but improves the light-collecting ability (LCA) at both polarizations. Therefore, the DE differences of different blaze wavelengths for the wideband blaze are explained. The Ag materials echelle with lower absorption is to further validate the results. From the point of view of the effects of absorption and LCA, the novel echelles with high DE can be designed and fabricated.

Published
2023
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