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First-principles calculation based on density functional theory (DFT) with the generalized gradient approximation (GGA) were carried out to investigate the energy band gap structure of Si and Ge nanofilms. Calculation results show that the band gaps of Si(111) and Ge(110) nanofilms are indirect structures and independent of film thickness, the band gaps of Si(110) and Ge(100) nanofilms could be transfered into the direct structure for nanofilm thickness of less than a certain value, and the band gaps of Si(100) and Ge(111) nanofilms are the direct structures in the present model thickness range (about 7 nm). Moreover, the changes of the band gaps on the Si and Ge nanofilms follow the quantum confinement effects. It will be a good way to obtain direct band gap emission in Si and Ge materials, and to develop Si and Ge laser on Si chip. [ABSTRACT FROM AUTHOR]