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Purpose: This study aimed to verify the reliability and validity of the Pain Assessment in Advanced Dementia Scale-Korean version (PAINAD-K) for assessing pain in patients unable to communicate in the post-anesthesia care unit (PACU).Methods: The study included 205 patients, aged >65 years, admitted to the PACU following general surgery. Reliability was assessed using Cronbach’s ⍺, test-retest, intraclass correlation coefficient (ICC), and kappa coefficients. Criterion validity was evaluated with concurrent validity, and receiver operating characteristic (ROC) analysis assessed sensitivity and specificity. Convergent and discriminant validity were analyzed to verify the construct of the scale.Results: The Cronbach’s ⍺, ICC, and test-retest correlation values were .78, .95~.98, and .56~.74, respectively, indicating good reliability. At baseline, the correlation coefficient was .93 with the Algoplus scale in the non-communicative group and .82 with the numeric rating scale in the communicative group. Further establishing criterion validity in the nonverbal group, the area under the ROC curve was 0.995 (sensitivity=98.4%, specificity=97.5%) at baseline and .95 (sensitivity=96.4%, specificity=93.2%) at the 30-minute follow-up. The correlation coefficient with the Critical-Care Pain Observation Tool was .69~.96, showing convergent validity, and there was a significant interaction effect between time and group, indicating discriminant validity.Conclusion: The study findings suggest that the PAINAD-K is a psychometrically valid scale for assessing pain in PACU patients aged >65 years who are unable to communicate.

Purpose: This study aimed to examine tertiary hospital nurses’ ageism, nursing practice environment and geriatric nursing performance and discover factors influencing geriatric nursing performance. Methods: The research was conducted for 117 nurses working at tertiary hospitals located at Seoul, and data were collected from March 14 to March 31, 2022. The collected data were analyzed with descriptive statistics, t-test, ANOVA, Pearson’s correlation coefficients, and multiple regression using the IBM SPSS 26.0 program. Results: Nursing practice environment was positively correlated with geriatric nursing performance (r=.25, p=.007). The factors influencing geriatric nursing performance were nursing practice environment (β=.25, p=.009) and experience living with the elderly (β=.23, p=.013), and as for the present units, internal medicine (β=.27, p=.009) and integrated nursing·care service (β=.21, p=.042) wards compared with a surgery ward showed an explanatory power of 19.0%. Conclusion: Factors affecting geriatric nursing performance include the current unit where nurses work, nursing practice environment, and experience living with older adults. Based on the research findings, preparing measures for enhancing the quality of geriatric nursing performance is necessary.

As superjunction devices are scaled down to smaller dimensions, the gate ringing becomes more prominent in dynamic switching. The exact origin of superjunction MOSFET 's gate ringing has not been so far identified as the conventional three-terminal measurement method cannot capture the dynamic behavior of the device, in particular the redistribution of charge between the different internal capacitive components in the superjunction structure. In this article, it is found that the gate ringing is highly related to the input capacitance. Specifically, by employing a TCAD model with a split gate method, the gate-to-source ( CGS ) and gate-to-drain ( CGD ) current are investigated during the dynamic transitions. The gate ringing is highly dependent on sum of the input capacitances ( CGS + CGD ) for the turn- on . In the case of the turn- off , however, the gate ringing is affected by the ratio of the input capacitances ( CGD / CGS ) and a lower CGS is desirable for a low gate oscillation.

The dV / dt in superjunction metal–oxide–semiconductor field-effect transistors (MOSFETs) during the turn-off transient has been shown to be higher than during the turn-on, which can be attributed to a shorter Miller plateau. In this article, we will show that these asymmetrical turn-on and turn-off characteristics are indirectly detected by the hysteresis of the dynamic gate-to-drain capacitance, ${C}_{\text {GD}}$ . Moreover, this article reveals the mechanisms behind the asymmetrical switching and the origin of the hysteresis, which have been shown to be caused by the difference in the ${C}_{\text {GD}}$ displacement current paths for the turn-off and the turn-on.

Multi-epitaxially grown superjunctions feature a fluctuation of the doping concentration (ripple) in the pillars and the ripple is highly dependent on the supplied thermal energy during the fabrication. This study thoroughly investigates the relationship between the ripple in the pillars and the static/dynamic characteristics of the device. The ripple dependent trade-offs in terms of the specific resistance and turn-off switching loss will be able to provide a guide for developing fine pitch superjunction devices.

As the dimensions of the power metal-semiconductor field-effect transistor (MOSFET) are scaling down, and the output capacitance is considerably reduced, the fast dV / dt becomes an issue and can trigger severe oscillations during hard switching. To understand the origin of the dV / dt and the induced gate oscillations, the intricate link between the device operation and the circuit conditions is required. In this article, the dynamic gate-to-drain capacitance, ${C}_{\text {GD}}$ , is extracted by employing a five-terminal method. Through the use of simulations, the relationship between ${C}_{\text {GD}}$ and the induced gate oscillations is explored. In addition to this, the 2-D depletion behavior in a superjunction system, which affects the dynamic ${C}_{\text {GD}}$ , is investigated.

The state-of-the-art superjunction (SJ) MOSFETs are based on the p-n pillar structures, arranged in a 2-D stripe geometry. This arrangement uses the superposition of the electric field components at the p-n junctions to create an enhanced depletion volume for higher breakdown capability. In this article, we will discuss structures, which additionally use the component of the electric field in the third dimension, to further enhance the depletion space. This allows higher doping concentrations in the pillars, which result in a better tradeoff between the breakdown voltage and the ON-state resistance, when compared with the 2-D structures. Specifically, we present a core–shell cylindrical SJ structure, and using the radial Poisson equation, we explain the electric field distribution within the SJ. We further discuss which geometry (core or shell) gives the best performance tradeoff. This is followed by the development of an analytical model, for the ON-state resistance in a 3-D SJ. Finally, we derive a specific figure of merit for the 3-D SJs and compare it with that of the equivalent 2-D structures.

Dexmedetomidine, an alpha 2 receptor agonist, prolongs nerve block duration when administered in conjunction with peripheral nerve blocks. We hypothesised that sedation with dexmedetomidine could also significantly prolong the analgesic duration of brachial plexus block (BPB) during orthopaedic surgery on the upper extremities.One hundred and two patients received upper extremity surgery under BPB. The patients were randomly sedated with dexmedetomidine (D group) or midazolam (M group) following BPB using 25 mL of local anaesthetics (1:1 mixture of 1% lidocaine and 0.75% ropivacaine). Adequate sedation was evaluated with the modified Ramsay Sedation Scale. Primary outcome was measured as the time the patient first requested analgesic via a patient-controlled analgesia device. Total opioid consumption during the first 24 post-operative hours was also measured as secondary outcomes.Time to first request for analgesia (mean ± standard deviation) was significantly longer in the D group (616.9 ± 158.2 min) than in the M group (443.7 ± 127.2 min) (P 0.001, Mean difference [95% CI] 173.2 [114.8-231.5] min). Total opioid consumption were significantly lower in the D group (fentanyl equivalent, 280.0 μg [171.3;374.0] vs. 363.9 μg [208.3;570.1], P = 0.01). Although patients in the D group showed deeper sedation over time (P 0.001), PACU stay time was only slightly extended in D group (5.2 [1.2-9.2] min). Perioperative complications did not differ in the two groups.Sedation with dexmedetomidine not only prolongs analgesic duration of BPB, but also reduces total opioid consumption during the first 24 post-operative hours.

An analytical model for superjunction (SJ) MOSFETs having an oxide pillar between the n-pillar and the p-pillar is developed. Owing to the low permittivity of the oxide, a high electric field is sustained across the oxide. This reduces the parasitic depletion width within the n-pillar, thus improving the current conducting path. The advantage of this structure is particularly visible as the cell pitch is scaled down and the pillows become narrower. The use of an oxide pillar leads to 30% reduction in the specific ON-state resistance when compared to a conventional SJ for a 2- $\mu \text{m}$ cell pitch. The analytical model shows a good agreement with the simulation results.

In ISPSD 2020 it has been shown that the effective mobility of a lateral 4H-SiC MOSFET could be increased by an order of magnitude through using an ultra-narrow-body design. Thus, this work presents further experimental results on a wide set of fin widths, ranging from conventional (860nm) to ultra-narrow (35nm). Furthermore, a 3D TCAD model, employing quantum corrections, is matched to experiment and applied to study these designs. It is thereby shown that the FinFET effect can have a strong impact in SiC devices and may allow for up to an 18x increase of the mobility relative to a reference width of 280nm. Finally, an optimization window of ~30-50nm is predicted for the fin width, below which the FinFET effect becomes detrimental.

Background: This study investigated the effect of support surface quality, stable vs unstable, for 6-week long squat exercise program on vertical jump performance. Method: The subjects were 24 healthy students who agreed to participate in this study. They divided into stable support surface group and unstable support surface group randomly. The squat exercise was performed three times of a week for 6 weeks. The height of each jump was measured by the height marked on the grid paper with the middle finger of the subject. Muscle strength was used to measure maximum voluntary isometric and isotonic contraction during knee extension. Balance (eyes-opened and eyes-closed one-leg standing balance tests) was performed alternately on the right and left legs.Results: Vertical jump was significant difference stable support surface group with unstable support surface group. Conclusion: These results indicate that vertical jump of stable support surface group was more improved than unstable support surface group.

It is common knowledge that the gate ringing of a power MOSFET is proportional to the dV/dt during the dynamic switching. In this study we show a particular situation when the gate ringing can be reduced significantly with a faster dV/dt. The faster dV/dt occurs when the driving current in the superjunction MOSFET increases, leading to faster charging of the parasitic capacitance. Initially, the gate ringing increases with the higher dV/dt. However, beyond a certain level the gate ringing starts to decline with further increase in the dV/dt. This abnormal phenomenon originates from the temporary turn-off the MOS channel during the turn-off transition.

A lateral trench SiC MOSFET with lateral conduction on the side walls was designed using an ultra-narrowbody (UNB) sandwiched by the trench walls. The p-body is designed to be very narrow in order to avoid any depletion region formed in its body. The structure is similar to a FinFET, but applied to a SiC device. The body width in the channel region of the fabricated UNB MOSFET was 55 nm. The drain current of the UNB and conventional MOSFET were 1.27 μA and 0. 11μA, respectively, at $V_{D S}=30 V$. The UNB structure presented a significant increase in the mobility, reaching values of over 200cm2/Vs. The result indicated a very prominent FinFET effect, resulting in very high mobility and hence very significant improvement in the channel resistance of SiC MOSFETs.

In spite of the reporting of several mathematical approaches dealing with the behavior of the superjunction MOSFET’s specific resistance, a study for the asymmetrical pillar (when the width of the n-pillar and the p-pillar are not the same at a given cellpitch) has not been carried out yet. When the width of one of the pillar (say n-pillar) is modified, the doping concentration (say donor) should be changed to maintain a charge balance condition. This in turn, changes the width of the depletion region, due to the parasitic JFET effect and as a result the effective on-state conduction path. This raises the question whether the best tradeoff between the specific on-state resistance and the breakdown voltage could be achieved by employing the conventional assumption of the same width of the n and p pillars. This paper clarifies the best option for the width of each pillar when designing a superjunction MOSFET and adapts the figures of merit to take into account the asymmetrical superjunction cell.

Predictions on limits of silicon in power devices have failed spectacularly in the past, but in spite of that, the theory that generated them is still used today and adapted for wide bandgap materials to justify their superior standing against silicon. The superjunction (SJ) MOSFET was the first device to break by more than one order of magnitude the so-called “limit of silicon” above 600 V. The current theory of SJ seems, however, to define a new technology-based limit rather than a material-based only limit. This implies that by scaling down the dimensions, in particular the cell pitch, the on-state resistances can continually decrease by several orders of magnitude, without a boundary. This paper shows that the downscaling of the cell dimensions cannot happen indefinitely and there is a material-dependent intrinsic limit for any power device, which no longer is limited by the geometry or the technology available. Using an analytical approach, and backed up by advanced numerical simulations, we show that the minimum cell pitch is $0.18~\mu \text{m}$ for silicon and $0.05~\mu \text{m}$ for 4H silicon carbide, and further reduction in the cell pitch would result in an increase in the specific resistance. Finally, a new figure of merit for an SJ MOSFET based on a rigorous 2-D analysis is defined.

In this paper, a new nonisolated high-voltage-gain boost converter is proposed. The proposed converter is constructed by adding an additional inductor to a conventional three-level-boost (TLB) converter. When compared with the conventional boost and TLB converters, the proposed converter can achieve higher voltage conversion ratio with reduced voltage and current stresses in the switches. In particular, the proposed converter can reduce the losses of active devices by reducing the current of the switch compared to conventional converters, thus, can achieve high efficiency. In addition, the proposed converter automatically balances the output voltages for an unbalanced load without the need for any additional control strategy or auxiliary circuit. A 2-kW prototype converter was built and tested to verify performances of the proposed converter.

The quasi-saturation (QS) effect in a power MOSFET has been discovered several decades ago. As the field has evolved and the dimensions in power MOSFETs have changed from tens of micrometers to submicrometer levels, and the gate geometry has evolved from planar to trench, the origin and the effect of the QS need to be re-assessed. This letter first discusses the origin of the QS effect in the state-of-the-art power MOSFETs and subsequently analyses the phenomenon of majority carrier injection (or diffusion) and its contribution to the increased carrier concentration in the drift region, specific to quasi-saturation.

The introduction of the superjunction has challenged the well-known limit of silicon. In spite of its widespread use, and despite its correct application in classical power MOSFETs, Baliga's figure of merit no longer can be used to give an accurate picture of the material potential in power electronics. Fujihira has updated both the static and dynamic figures of merit, but, as the cell pitch of the SJ scale down, these figure of merits need to include the parasitic JFET effect and an analytical formulation of the gate-drain capacitance and its intricate dependence on the drain voltage. This work presents for the first-time new static and dynamic figure of merits which take into account the spectacular advances in the SJ technology, where the cell dimensions are approaching the sub-micrometer level.

Diaphragmatic eventration is a rare anomaly. When patients with this condition undergo general anesthesia, anesthetic management should be performed with particular care owing to the risk of diaphragmatic rupture. Such a rupture can be perioperatively diagnosed using multiple tools including lung ultrasonography. This case report describes the anesthetic management of a male infant with osteochondroma in the distal ulna, presenting with diaphragmatic eventration on the right side.

Supplemental material, supple_description for Ultrasound-guided perioperative management of 28-month-old patient with congenital diaphragmatic eventration by Hyemin Kang, Sangmin Lee, Hyunwoo Park, Yeojung Kim, YoungKwon Ko, Yoon-Hee Kim and Boohwi Hong in SAGE Open Medical Case Reports

This paper is a theoretical study of the optimum doping concentration for the n and p pillars of a superjunction IGBT. As the concentration of the pillar for a silicon-carbide superjunction device increases up to 10 times higher than that of silicon, unipolar drift current in each pillar can be predominant over the bipolar action. The increased doping concentration effectively reduces the potential drop in the pillar for the on-state conduction.

In this letter, we report an analytical model for the on-state characteristics of a superjunction (SJ) metal–oxide–semiconductor field effect transistor, featuring a compensated pillar between the n-pillar and the p-pillar. Since a large amount of lateral electric field is sustained in the compensated region, the doping concentration in the n-pillar can be enhanced significantly, leading to a substantial reduction in the on-state resistance of the SJ. Simulation results proved that the use of an extra compensated pillar within the SJ structure reduces the on-state resistance by 25% compared to that of a conventional SJ for the same breakdown voltage.

Background Hyperlactataemia represents oxygen imbalance in the tissues and its occurrence during cardiac surgery is associated with adverse outcomes. Glucose-insulin-potassium (GIK) infusion confers myocardial protection against ischaemia-reperfusion injury and has the potential to reduce lactate release while improving its clearance. Objectives The objective of this study is to compare the effect of GIK on the incidence of hyperlactataemia in patients undergoing valvular heart surgery. Design A randomised controlled study. Setting Single university teaching hospital. Patients One hundred and six patients scheduled for elective valvular heart surgery with at least two of the known risk factors for hyperlactataemia. Intervention Patients were randomly allocated to receive either GIK solution (insulin 0.1 IU kg(-1) h(-1) and an infusion of 30% dextrose and 80 mmol l(-1) potassium at 0.5 ml kg(-1) h(-1)) or 0.9% saline (control) throughout surgery. Main outcome measures The primary outcome was the incidence of hyperlactataemia (lactate ≥ 4 mmol l(-1)) during the operation and until 24 h after the operation. Secondary outcomes included haemodynamic parameters, use of vasopressor or inotropic drugs, and fluid balance until 24 h postoperatively. Postoperative morbidity endpoints were also assessed. Results The incidences of hyperlactataemia were similar in the groups (32/53 patients in each of the control and GIK groups, P > 0.999). There were no intergroup differences in haemodynamic parameters, use of vasopressor and inotropic drugs, or fluid balance. The incidences of postoperative morbidity endpoints were similar in both groups. Conclusion Despite its theoretical advantage, GIK did not provide beneficial effects in terms of the incidence of hyperlactataemia or outcome in patients undergoing valvular heart surgery. Trial registration Clinicaltrials.gov identifier: NCT01825720.

Photodiodes made from core–shell nanowires (NWs) comprising n-type silicon (n-Si; core) and nitrogen-doped ZnO (ZnO:N; shell) were fabricated by atomic layer deposition of ZnO:N on vertically aligned Si NWs. The device properties were investigated as functions of nitrogen content of the ZnO:N shell. The electron-carrier concentration of ZnO:N was modulated by adjusting the concentration of the reactant, diluted ammonium hydroxide, from 0 to 30%. The rectification ratio and the reverse-current density of the ZnO:N/n-Si planar heterojunction were evaluated under dark condition for various NH4OH concentrations. The ZnO:N/n-Si heterojunction prepared with NH4OH 15% was found to have the lowest reverse-current density with a moderate resistivity. In order to realize an effective ZnO:N/n-Si photodiode, a ZnO:N layer prepared with 15% NH4OH was deposited on well-aligned Si nanowires. The core–shell NW photodiode showed more sensitive photodetecting performance in UV light than the planar photodiode. Also, the significantly enhanced performances of the core–shell NW photodiode were evaluated by examining its spectral responsivity.

A highly efficient n-ZnO/p-Si core–shell nanowire (NW) photodiode was fabricated using ZnO grown by atomic layer deposition (ALD) on a well-ordered Si NW array. Si NW arrays were prepared by metal-assisted chemical etching, for which a metal mesh with a well-organized nanohole array was made using anodic aluminum oxide. This resulted in a good arrangement, smooth surface, and small diameter distribution of the Si NW array. Consequently, ZnO layers with various thicknesses from 15 to 30 nm were deposited by the ALD method. Because of the smooth surface of the well-ordered Si NWs yielding low surface roughness scattering, the resulting photodiode showed significantly improved device characteristics.

We investigated the device properties of ZnO homojunction core–shell nanorods (NRs) ultraviolet (UV) photo-detecting diodes depending on fabrication process. ZnO homojunction core–shell NRs fabrication was realized by atomic layer deposition (ALD) of highly conformal ZnO shell with high concentration of nitrogen (HNZO) over hydrothermally synthesized n-ZnO NRs. ALD of HNZO was carried out using diethyl zinc (DEZ) and diluted ammonium hydroxide (NH 4 OH) as a Zn precursor and reactant/nitrogen source, respectively. On the electrical analysis, HNZO films is found to be weak n-type or ambiguous and, finally this HNZO attributed the rectifying property at the junction with n-type ZnO NRs. ZnO planar device was also fabricated as a comparative reference. Comparative study between core–shell and planar device has shown that the responsivity of the core–shell device was turned out to be about two times higher than that of planar device. Photoluminescence (PL) intensity of core–shell device was significantly reduced compared to that of planar device for overall region of wavelength, which was attributed to rapid separation of photo-generated carriers. The carrier transport mechanism in core–shell NR device is discussed based on band bending phenomenon.

Background: The addition of the adjuvant dexmedetomidine to a nerve block improves the quality of the block and reduces perioperative opioid consumption. The aim of this study was to assess the effect of dexmedetomidine as an adjuvant for the thoracic paravertebral block (TPVB) in postoperative pain control after video-assisted thoracoscopic surgery (VATS). Methods: Sixty-six males, aged 15&ndash, 40 years, with spontaneous pneumothorax scheduled for VATS wedge resection were enrolled. Following surgery, ultrasound-guided TPVB was performed on the T3 and T5 levels with 30 mL of 0.5% ropivacaine, plus adjuvant dexmedetomidine 50 &mu, g or normal saline. The primary outcome was cumulative fentanyl consumption at 24 h. Pain severity, the requirement for additional rescue analgesics, hemodynamic variations, and side effects were also evaluated. Results: Median postoperative cumulative fentanyl consumption at 24 h was significantly lower in the dexmedetomidine group (122.6 (interquartile range (IQR) 94.5&ndash, 268.0) &mu, g vs. 348.1 (IQR, 192.8&ndash, 459.2) &mu, g, p-value = 0.001) with a Hodges&ndash, Lehman median difference between groups of 86.2 (95% confidence interval (CI), 4.2&ndash, 156.4) mg. Coughing numeric rating scale (NRS) was lower in the dexmedetomidine group at postoperative 2, 4, 8, and 24 h. However, resting NRS differed significantly only after 4 h postoperative. Conclusions: Dexmedetomidine as an adjunct in TPVB provided effective pain relief and significantly reduced opioid requirement in VATS.

Atomic layer deposition (ALD) is a promising nanomaterial synthesis technique due to its excellent confomality over complicated nanostructure. We fabricated ALD semiconducting oxide/semiconductor core-shell nanowire array and characterized the device performances as a photodiode. Si nanowires array with about 100~300 nm diameter were prepared using electroless etching technique. Nitrogen doped ALD ZnO was carried out using diethylzinc (DEZ) and diluted NH4OH various growth temperature. We measured responsivity and external quantum efficiency of the fabricated device as a function of wavelength of incident light and compared with thin film based photodiode. For NW array device, the photocurrent density and responsivity were significantly enhanced compared to thin film based device. Also, by combining self-assembly process, well ordered core-shell ZnO/Si nanowire arrays were prepared. The device performance made of ordered core-shell NW arrays was significantly enhanced. In addition, ZnO homojunction NW photodiode as well as ALD TiO2 outer shell NW photodiodes were fabricated and their device characterizations were compared to the planar type device.

The thermal atomic layer deposition (Th-ALD) of TiO2 films on stainless steel for use as a photocatalyst was investigated and compared to plasma-enhanced ALD (PE-ALD) using the same precursor. Th-ALD TiO2 films were deposited on stainless steel using a Ti(NMe2)4 [tetrakis(dimethylamido) Ti, TDMAT] precursor. The microstructure of the Th-ALD TiO2 films was greatly dependent on the growth temperature as an amorphous structure was obtained at 200 °C and a polycrystalline structure was achieved at temperatures above 300 °C. From the contact angle measurement of water, the crystalline TiO2 films exhibited super-hydrophilicity after UV irradiation. The anatase phase of both the Th- and PE-ALD TiO2 films grown on stainless steel showed higher photocatalytic abilities than the rutile phase grown at 400 °C. In addition, the anatase PE-ALD TiO2 film demonstrated a higher photocatalytic efficiency than the Th-ALD films. The photocatalytic efficiency of the Th-ALD TiO2 films was investigated as a function of film thickness and it was found that the efficiency was saturated above a film thickness of 120 nm.

Zinc oxide (ZnO) thin films were prepared by plasma-enhanced atomic layer deposition (PE-ALD) using oxygen plasma as a reactant and the properties were compared with those of thermal atomic layer deposition (TH-ALD) ZnO thin films. While hexagonal wurzite phase with preferential (0 0 2) orientation was obtained for both cases, significant differences were observed in various aspects of film properties including resistivity values between these two techniques. Photoluminescence (PL) measurements have shown that high resistivity of PE-ALD ZnO thin films is due to the oxygen interstitials at low growth temperature of 200 °C, whose amount decreases with increasing growth temperature. Thin film transistors (TFT) using TH- and PE-ALD ZnO as an active layer were also fabricated and the device properties were evaluated comparatively.

A double step-down dual active bridge converter with high voltage gain and high efficiency is proposed in this paper. The proposed converter achieves double step down function by adding only one capacitor at the primary side of transformer. Moreover, the three switches at the primary side has reduced voltage stress and the proposed converter operates in a wide ZVS range under light load. Additionally there is no transformer saturation problem by the addition of this capacitor. Hence, it removes the need of additional control scheme and circuit which improves the efficiency of the system in terms of cost and complexity. Moreover, by applying trapezoidal scheme at transformer primary side, two low side switches of proposed converter has improved turn-off loss. A 4 kW prototype converter is constructed to verify the performance of the proposed converter.

Why is the development of a deep trench superjunction (SJ) MOSFET above 600 V and under 8.0 mohm cm2 difficult? A deep trench SJ MOSFET is expected to have a low turn-on resistance because the post thermal process after the epitaxial process, which is normally used in a multi-step epitaxy structure, is unnecessary. When designing a deep trench SJ MOSFET, the trench angle is the most important factor because this determines the breakdown voltage (BV) and BV variations. In this paper, we investigated how the trench angle affects the BV and BV window as a condition of the possible thermal process. By employing a physical concept, ΔCharge, we explained why the maximum BV is decreased and the BV window is increased as the trench angle decreases. Also, we systematically scrutinized the transition of the vertical electric field by varying the trench angle. Furthermore, in a real case, the principle of the trench angle which contributes to the deviation of the charge imbalance and specific resistance of SJ is described. Finally, we discuss the challenge of SJ MOSFET development in the industry.

Core-shell p-n junction diode was fabricated using the atomic layer deposition (ALD) of ZnO on p-Si nanowire (NW) array prepared by electroless etching method. I-V measurements have shown that the carrier concentrations in ALD ZnO for both of the core-shell and planar diodes are effectively controlled by nitrogen doping to a proper level to form rectifying junction. Responsivity of the core-shell device was about 0.98 A/W at 660 nm, which is significantly improved compared to planar device. The superior sensitivity of core-shell structure is attributed to the effective carrier separation and collection originating from the characteristic of core-shell NWs full depletion.