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We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in organic light-emitting diode (OLED) pixels compared to their longer channel counterparts. The shorter channel IGZO TFTs (with a channel length (L) of 3 μm) biased with a back gate voltage of −3.5 V showed a larger subthreshold swing (SS = 0.21 V/dec) than the longer channel ones (with L = 5 μm, SS = 0.16 V/dec) with a similar threshold value (VTH = 0.7–0.8 V). A large SS is beneficial for controlling grayscale levels, especially at low gray levels, when IGZO TFTs are used as driving transistors in OLED pixels. Furthermore, the negatively back-gate-biased shorter channel SA TG coplanar IGZO TFTs exhibited significantly enhanced electrical stability compared to the longer channel ones under both positive gate bias and hot carrier stresses. The findings of this study are expected to be useful in expanding the utility of IGZO TFTs in OLED displays.

The incorporation of an atomic-layer-deposited Al2O3 capping layer was proposed as an effective method to enhance the electrical performance and stability of p-channel SnO thin-film transistors (TFTs). The SnO TFT with the Al2O3 capping layer demonstrated better electrical characteristics, such as higher field-effect mobility (μFE = 1.7 cm2/V·s), smaller subthreshold swing (SS = 2.9 V/dec), and larger current on/off ratio (ION/OFF = 1.6 × 104), than the pristine SnO TFT (μFE = 1.5 cm2/V·s, SS = 3.8 V/dec, and ION/OFF = 6.9 × 102). Furthermore, the Al2O3-capped SnO TFT exhibited significantly enhanced electrical stability under an applied negative-gate-bias stress compared to the pristine device. The observed phenomena were mainly attributed to the decreased number of oxygen-vacancy-induced hole trap states within the SnO owing to diffused hydrogen from the atomic-layer-deposited Al2O3 layer. Our experimental results thus demonstrate that incorporating the atomic-layer-deposited Al2O3 capping layer is a simple and effective method for improving the electrical characteristics of p-channel SnO TFTs.

In this letter, a novel metal oxide semiconductor field effect transistor (MOSFET) is designed to improve high temperature operation characteristic. The MOSFET used in this study can reduce the leakage current by reducing carrier injection at high temperature by using silicon on insulator (SOI) substrate and wide band gap material. The electron energy barrier formed by the wide band gap can inhibit the source carrier from being injected into the channel at high temperature. Feasibility of suggested device is confirmed by device simulation and analysis of device parameters affecting device operation is performed.

Abstract We use the p-adic q-integral and group action to count the number of the generating functions of modified q-Euler polynomials in a prescribed set. Some generating function yields modified q-Euler polynomials with the isotropy group D4 $D_{4}$ and some gives Euler polynomials with the isotropy group V4 $V_{4}$.

Abstract In this paper, we study some properties of degenerate Changhee-Genocchi numbers and polynomials and give some new identities of these polynomials and numbers which are derived from the generating function. In particular, we provide interesting identities related to the Changhee-Genocchi polynomials of the second kind and Changhee-Genocchi numbers of the second kind.

In this study, the effects of capping layers with different metals on the electrical performance and stability of p-channel SnO thin-film transistors (TFTs) were examined. Ni- or Pt-capped SnO TFTs exhibit a higher field-effect mobility (μFE), a lower subthreshold swing (SS), a positively shifted threshold voltage (VTH), and an improved negative-gate-bias-stress (NGBS) stability, as compared to pristine TFTs. In contrast, Al-capped SnO TFTs exhibit a lower μFE, higher SS, negatively shifted VTH, and degraded NGBS stability, as compared to pristine TFTs. No significant difference was observed between the electrical performance of the Cr-capped SnO TFT and that of the pristine SnO TFT. The obtained results were primarily explained based on the change in the back-channel potential of the SnO TFT that was caused by the difference in work functions between the SnO and various metals. This study shows that capping layers with different metals can be practically employed to modulate the electrical characteristics of p-channel SnO TFTs.

Recently, Dolgy-Jang-Kwon-Kim introduced Carlitz’s type q-Changhee polynomials. In this paper, we define Carlitz’s type modified degenerate q-Changhee polynomials and investigate some interesting identities of these polynomials.

Copper iodide (CuI) has been in the spotlight as a promising p-type semiconducting material due to its excellent electrical property and low fabrication temperature. Here, we propose a novel approach for constructing solution-processable p-type CuI TFTs sandwiched by both Al2O3 interfacial and passivation layers and demonstrate the improvement mechanism for device performance. The pristine CuI TFTs with optimized Al2O3-based sandwiched architecture exhibited enhanced device performance, such as a high current on-off ratio of 1.01 x 105, a low hysteresis of 0.76 V, and a subthreshold swing of 0.35 V decade-1. These parameters exceed the performance of CuI TFTs in previous reports to the best of our knowledge. We further systematically studied the effective roles of the Al2O3-based sandwiched architecture, inducing the creation of the iodine vacancy and decrease in the hole concentration, as well as improved crystallinity and grain size. Based on the results, high-performance CuI TFTs with excellent stability were achieved, sustaining the electrical performance after repeated operation over 100 times. Thus, this work can provide a new insight on solution-processable p-type CuI TFTs with Al2O3-based sandwiched architecture for developing high-performance complementary logic circuits. [ABSTRACT FROM AUTHOR]