Search

The properties of AZO (98-wt% ZnO, 2-wt% Al2O3) films produced in pure Ar and Ar (98%) + H2 (2%) (H2-diluted Ar) by radio-frequency (RF) magnetron sputtering were investigated as functions of the substrate temperatures. H2-diluted Ar improved the electrical properties of the AZO films fabricated at low substrate temperatures, but this benefit gradually diminished with increasing substrate temperature. This phenomenon was explained by O-H stretching in the Zn-O bond at low temperatures and by the formation of oxygen vacancies at high temperatures. The average optical transmission was over ~85%, and the orientation of the AZO films deposited both in pure Ar and in H2-diluted Ar was in the [002] direction.

Since multimedia data takes large part of realtime transmission in wireless communication environments such as IEEE 802.11, QoS issues became one of the important problems with network performance. 802.11e MAC provides differentiated services based on priority schemes to solve existing 802.11 MAC problems. The TXOP is an important factor with the priority to improve network performance and QoS because it defines the time duration in which multiple frames can be transferred at one time for each station. In this paper, therefore frame sizes, TXOP Limit, and Priority values in accordance with the number of stations are experimented and derived for best network performance and QoS. Using 802.11e standard parameters, simulation results show the best throughput when the number of stations is 5 and TXOP Limit value is 6.016ms. For fairness, the best result is achieved at 3.008ms of TXOP Limit value and 15-31 of CW(Contention Window) that is lower priority than CW 7-15.