262 results on '"Iannuzzo, F."'
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2. Effect of short-circuit degradation on the remaining useful lifetime of SiC MOSFETs and its failure analysis
3. A non-invasive SiC MOSFET Junction temperature estimation method based on the transient light Emission from the intrinsic body diode
4. Parameters sensitivity analysis of silicon carbide buck converters to extract features for condition monitoring
5. Study of moisture transport in silicone gel for IGBT modules
6. FEM-aided damage model calibration method for experimental results
7. Radiation and magnetic field effects on new semiconductor power devices for HL-LHC experiments
8. Evaluating IGBT temperature evolution during short circuit operations using a TSEP-based method
9. Implications of short-circuit events on power cycling of 1.2-kV/20-A SiC MOSFET power modules
10. SiC MOSFET vs SiC/Si Cascode short circuit robustness benchmark
11. Impact of device aging in the compact electro-thermal modeling of SiC power MOSFETs
12. Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactions
13. Smart SiC MOSFET accelerated lifetime testing
14. Investigating SiC MOSFET body diode's light emission as temperature-sensitive electrical parameter
15. Power cycling test of transfer molded IGBT modules by advanced power cycler under different junction temperature swings
16. Failure mechanism analysis of fuses subjected to manufacturing and operational thermal stresses
17. Investigation of acoustic emission as a non-invasive method for detection of power semiconductor aging
18. Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules
19. Comparative study of wire bond degradation under power and mechanical accelerated tests
20. Advanced power cycler with intelligent monitoring strategy of IGBT module under test
21. Capacitive effects in IGBTs limiting their reliability under short circuit
22. A survey of SiC power MOSFETs short-circuit robustness and failure mode analysis
23. Reliability-oriented environmental thermal stress analysis of fuses in power electronics
24. Mission-profile-based stress analysis of bond-wires in SiC power modules
25. Comparison of thermal runaway limits under different test conditions based on a 4.5 kV IGBT
26. Power cycling test and failure analysis of molded Intelligent Power IGBT Module under different temperature swing durations
27. Robustness of MW-Level IGBT modules against gate oscillations under short circuit events
28. Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT
29. Junction temperature estimation method for a 600 V, 30A IGBT module during converter operation
30. Turn-off instabilities in large area IGBTs
31. Thermal damage in SiC Schottky diodes induced by SE heavy ions
32. Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit
33. Thermal instability during short circuit of normally-off AlGaN/GaN HFETs
34. Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure
35. Unclamped repetitive stress on 1200 V normally-off SiC JFETs
36. Reliability oriented design of power supplies for high energy physics applications
37. A time-resolved IBICC experiment using the IEEM of the SIRAD facility
38. A new test methodology for an exhaustive study of single-event-effects on power MOSFETs
39. Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET
40. Instable mechanisms during unclamped operation of high power IGBT modules
41. Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions
42. Experimental evidence of “latent gate oxide damages” in medium voltage power MOSFET as a result of heavy ions exposure
43. IGBT modules robustness during turn-off commutation
44. High performance, FPGA-based test apparatus for unclamped inductive switching of IGBTs
45. Switching Stability Analysis of Paralleled RC-IGBTs With Snapback Effect
46. The robustness of series-connected high power IGBT modules
47. POWER DISTRIBUTION ARCHITECTURE FOR HIGH ENERGY PHYSIC HOSTILE ENVIRONMENT
48. Experimental study of power MOSFET’s gate damage in radiation environment
49. The high frequency behaviour of high voltage and current IGBT modules
50. Investigation of MOSFET failure in soft-switching conditions
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