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The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid 2D-semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner, while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and in particular the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.

We discuss coupling of site-selectively induced quantum emitters in exfoliated monolayers of WSe$_2$ to plasmonic nanostructures. Squared and rectangular gold nanopillars, which are arranged in pitches of \SI{4}{\micro\meter} on the surface, have sizes of tens of nanometers, and act as seeds for the formation of quantum emitters in the atomically thin materials. We observe chraracteristic narrow-band emission signals from the monolayers, which correspond well with the positions of the metallic nanopillars with and without thin dielectric coating. Single photon emission from the emitters is confirmed by autocorrelation measurements, yielding $g^{2}(\tau=0)$ values as low as 0.17. Moreover, we observe a strong co-polarization of our single photon emitters with the frequency matched plasmonic resonances, indicating deterministic light-matter coupling. Our work represents a significant step towards the scalable implementation of coupled quantum emitter-resonator systems for highly integrated quantum photonic and plasmonics applications.

Atomic monolayers of transition metal dichalcogenides represent an emerging material platform for the implementation of ultra compact quantum light emitters via strain engineering. In this framework, we discuss experimental results on creation of strain induced single photon sources using a WSe2 monolayer on a silver substrate, coated with a very thin dielectric layer. We identify quantum emitters which are formed at various locations in the sample. The emission is highly linearly polarized, stable in linewidth and decay times down to 300 ps are observed. We provide numerical calculations of our monolayer-metal device platform to assess the strength of the radiative decay rate enhancement by the presence of the plasmonic structure. We believe, that our results represent a crucial step towards the ultra-compact integration of high performance single photon sources in nanoplasmonic devices and circuits.

Monolayers of transition metal dichalcogenide materials emerged as a new material class to study excitonic effects in solid state, since they benefit from enormous coulomb correlations between electrons and holes. Especially in WSe2, sharp emission features have been observed at cryogenic temperatures, which act as single photon sources . Tight exciton localization has been assumed to induce an anharmonic excitation spectrum, however, the evidence of the hypothesis, namely the demonstration of a localized biexciton, is elusive. Here, we unambiguously demonstrate the existence of a localized biexciton in a monolayer of WSe2, which triggers an emission cascade of single photons. The biexciton is identified by its time-resolved photoluminescence, superlinearity and distinct polarization in micro-photoluminescence experiments. We evidence the cascaded nature of the emission process in a cross-correlation experiment, which yields a strong bunching behavior. Our work paves the way to a new generation of quantum optics experiments with two-dimensional semiconductors., Comment: 13 pages, 3 Figures

Atomic monolayers represent a novel class of materials to study localized and free excitons in two dimensions and to engineer optoelectronic devices based on their significant optical response. Here, we investigate the role of the substrate on the photoluminescense response of MoSe$_2$ and WSe$_2$ monolayers exfoliated either on SiO$_2$ or epitaxially grown InGaP substrates. In the case of MoSe$_2$, we observe a significant qualitative modification of the emission spectrum, which is widely dominated by the trion resonance on InGaP substrates. However, the effects of inhomogeneous broadening of the emission features are strongly reduced. Even more strikingly, in sheets of WSe$_2$, we could routinely observe emission lines from localized excitons with linewidths down to the resolution limit of 70\,$\mu$ eV. This is in stark contrast to reference samples featuring WSe$_2$ monolayers on SiO$_2$ surfaces, where the emission spectra from localized defects are widely dominated by spectral diffusion and blinking behaviour. Our experiment outlines the enormous potential of III-V-monolayer hybrid architectures to obtain high quality emission signals from atomic monolayers, which are straight forward to integrate into nanophotonic and integrated optoelectronic devices.

Solid state cavity quantum electrodynamics is a rapidly advancing field which explores the frontiers of light-matter coupling. Plasmonic approaches are of particular interest in this field, since they carry the potential to squeeze optical modes to spaces significantly below the diffraction limit1,2, enhancing light-matter coupling. They further serve as an architecture to design ultra-fast, non-linear integrated circuits with smallest footprints3. Transition metal dichalcogenides are ideally suited as the active material in such circuits as they interact strongly with light at the ultimate monolayer limit4. Here, we implement a Tamm-plasmon-polariton structure, and study the coupling to a monolayer of WSe2, hosting highly stable excitons5. Exciton-Polariton formation at room temperature is manifested in the characteristic energy-momentum dispersion relation studied in photoluminescence, featuring an anti-crossing between the exciton and photon modes with a Rabi-splitting of 23.5 meV. Creating polaritonic quasi-particles in plasmonic architectures with atomic monolayers under ambient conditions is a crucial step towards compact, highly non-linear integrated photonic and polaritonic circuits6,7.