209 results on '"Iga, R."'
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2. A Case of Medullary Thyroid Carcinoma with Multiple Pulmonary and Liver Metastases.
3. Fine Grain Body-Biasing: A strategy for asynchronous circuits
4. Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate
5. Novel adjustment structure and method for InP-based Mach-Zehnder interferometer polarization splitter
6. Cylindrical anisotropic $��^{2}$ dynamos
7. 8 x 50-Gb/s simultaneous operation of EADFB laser array using flip-chip interconnection technique
8. Compact flip‐chip interconnection 8 × 50 Gbit/s EADFB laser array module for 400 Gbit/s transceiver
9. 50 Gbit/s uncooled operation (5–85°C) of 1.3 µm electroabsorption modulator integrated with DFB laser
10. Extremely compact transmitter optical sub-assembly for next-generation 10-km 100GbE transceivers
11. Ultra-high-speed electroabsorption modulator integrated lasers for 100GbE and beyond
12. Theoretical and Experimental Investigations of Laser Characteristics of Novel Rear-Grating Structure and Its Application to Uncooled Light Source
13. Parallel-ring-resonator Tunable Laser Integrated with Electroabsorption Modulator for 100-Gb/s (25-Gb/s × 4) Optical Packet Switching
14. Tunable Distributed Amplification (TDA-) DFB Laser with Asymmetric Structure
15. 1.3-$\mu$m 4$\,\times\,$25-Gb/s Monolithically Integrated Light Source for Metro Area 100-Gb/s Ethernet
16. Low-voltage operation of 100-Gbit/s EADFB laser array module
17. 4×25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet
18. P274 PIOGLITAZONE SUPPRESSES ONLY PLASMA SMALL, DENSE LDL BUT NOT LARGE LDL IN TYPE 2 DIABETIC PATIENTS
19. 25 Gbit/s 1.3 [micro sign]m InGaAlAs-based electroabsorption modulator integrated with DFB laser for metro-area (40 km) 100 Gbit/s Ethernet system
20. Analysis of Wear-Out Degradation of a DFB Laser Using an Optical-Beam-Induced Current Monitor
21. 100°C 10 Gbit∕s directly modulated InGaAsP DFB lasers with Ru-doped semi-insulating buried heterostructure
22. Highly reliable (<1000 FITs at 95/spl deg/C) 1.5-/spl mu/m DFB laser high-mesa SIBH structure for CWDM systems
23. A 40-gb/s InGaAlAs-InAlAs MQW n-i-n Mach-Zehnder Modulator with a drive Voltage of 2.3 V
24. Monolithically integrated eight-channel WDM modulators with cyclic AWGs for multichannel-block operation over C-band
25. Monolithically integrated eight-channel WDM modulator with narrow channel spacing and high throughput
26. Recovery of 160 GHz optical clock from 160 Gbit∕s data stream using modelocked laser diode
27. Zn-doped InGaAs with high carrier concentration enhanced by Sb surfactant for low specific contact resistance.
28. 4×25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet.
29. Lossless electroabsorption modulator monolithically integrated with a semiconductor optical amplifier and a passive waveguide
30. Recovery of 80 GHz optical clock from 160 Gbit∕s data using regeneratively modelocked laser diode
31. 160 GHz actively modelocked semiconductor laser
32. A 160-GHz semiconductor mode-locked laser directly driven by an 80-GHz electrical signal
33. 40 Gbit∕s n–i–n InP Mach–Zehnder modulator with a voltage of 2.2 V
34. High extinction ratio performance of DWDM monolithic multichannel modulation circuit
35. Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers
36. Correlation between Fe-Zn inter-diffusion observed by scanning capacitance microscopy and device characteristics of electro-absorption modulators
37. Single Transverse Mode Operation of 1.55-μm Buried Heterostructure VCSELs
38. Ruthenium-doped InP buried 1.3-μm DFB lasers on a p-type substrate.
39. Suppression of Zn diffusion into absorption layers in electroabsorption (EA) modulators due to the use of Ru-doped semi-insulating InP buried heterostructures.
40. High performance of 1.55-μm buried-heterostructure vertical-cavity surface-emitting lasers
41. Low threshold (380 /spl mu/A) and single transverse mode operation of 1.55-/spl mu/m BH vertical-cavity surface-emitting lasers
42. Wide bandwidth of over 50 GHz travelling-wave electrode electroabsorption modulator integrated DFB lasers
43. 1.55-μm buried-heterostructure VCSELs with InGaAsP/lnP-GaAs/AlAs DBRs on a GaAs substrate
44. Single transverse mode operation of 1.55-μm buried heterostructure VCSELs on GaAs substrate.
45. Buried-heterostructure long-wavelength vertical-cavity surface-emitting lasers with InGaAsP/InP-GaAs/AlAs DBRs
46. Compact and stable electroabsorption optical modulator modules
47. Fabrication and performance of AlGaAs-GaAs distributed Bragg reflector lasers and distributed feedback lasers utilizing first-order diffraction gratings formed by a periodic groove structure
48. High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semi-insulating-InP buried structure
49. Thin-film wafer fusion fabrication technology for buried heterostructure InGaAsP/InP lasers on GaAs
50. Ammonium sulfide combined etching (ACE): an effective treatment for reducing impurities prior to MOVPE InP regrowth in a process using hydrocarbon gas reactive ion etching (RIE)
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