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2. How to Consider SEEs When Designing a SiGe Low-Noise Amplifier—An Overview

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3. Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA

4. Single-Event Transient Study of Ga₂O₃ Rectifiers

18. SET-Induced Dropout and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs

19. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier

20. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs

21. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 2: Accurately Determining Laser-Equivalent LET

22. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 1: Metrics for Assessing Response Agreement

24. Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs

26. Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures

32. Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption

34. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach

36. Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation

37. Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform

39. Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation.

40. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs

41. New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles

42. Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform

43. Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam

45. Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics

47. Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs

48. Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform

49. The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology