143 results on '"Ildefonso, Adrian"'
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2. How to Consider SEEs When Designing a SiGe Low-Noise Amplifier—An Overview
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3. Comparing Third-Order Digital Modulation Schemes for SEU Resilience in RF Receivers Due to SETs in the SiGe LNA
4. Single-Event Transient Study of Ga₂O₃ Rectifiers
5. Status Update on the Pulsed Laser Single Event Effects SEE Test Guideline Desk Reference - A NASA-NRL Collaboration
6. Status Update on the Pulsed Laser Single Event Effects SEE Test Guideline Desk Reference - A NASA-NRL Collaboration
7. A Hybrid Model-Based and Data-Driven Framework for Automated Spacecraft Fault Detection
8. The Propagation of Extended SET Tails in RF Amplifiers Using 45-nm CMOS on PDSOI
9. Examination of Trapping Effects on Single-Event Transients in GaN HEMTs
10. Impact of Device Layout on Thermal Parameters and RF Performance of 90-nm SiGe HBTs
11. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response – Part 1: Metrics for Assessing Response Agreement
12. SET-Induced Drop-out and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs
13. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response – Part 2: Accurately Determining Laser-Equivalent LET
14. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs
15. The Effects of Carbon Doping on the Single-Event Transient Response of SiGe HBTs
16. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low Noise Amplifier
17. Hybrid Edge Termination in Vertical GaN: Approximating Beveled Edge Termination via Discrete Implantations
18. SET-Induced Dropout and Recovery of Cross-Coupled and Differential-Colpitts Microwave Oscillators Using SiGe HBTs
19. Comparing Digital Modulation Schemes in RF Receivers for Bit Errors Induced by Single-Event Transients in the Low-Noise Amplifier
20. Effects of Collector Profile on the SET Response of 130-nm High-Speed and High-Breakdown SiGe HBTs
21. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 2: Accurately Determining Laser-Equivalent LET
22. Quantitative Laser Testing for Predicting Heavy-Ion SEE Response—Part 1: Metrics for Assessing Response Agreement
23. Using Machine Learning to Mitigate Single-Event Upsets in RF Circuits and Systems
24. Pulsed-Laser Testing to Quantitatively Evaluate Latchup Sensitivity in Mixed-Signal ASICs
25. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
26. Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures
27. (Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC
28. Review—Opportunities in Single Event Effects in Radiation-Exposed SiC and GaN Power Electronics
29. Variability in Total-Ionizing-Dose Response of Fourth-Generation SiGe HBTs
30. Mapping the Spatial Dependence of Charge-Collection Efficiency in Semiconductor Devices Using Pulsed-Laser Testing
31. Review—Radiation Damage in Wide and Ultra-Wide Bandgap Semiconductors
32. Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by Two-Photon Absorption
33. High Responsivity Ge Phototransistor in Commercial CMOS Si-Photonics Platform for Monolithic Optoelectronic Receivers
34. Quantitative Prediction of Ion-Induced Single-Event Transients in an Operational Amplifier Using a Quasi-Bessel Beam Pulsed-Laser Approach
35. Analysis of the Impact of Radiation-Induced Optical Transients on Deep-Space Optical Communications Systems using PPM
36. Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation
37. Tradeoffs Between RF Performance and SET Robustness in Low-Noise Amplifiers in a Complementary SiGe BiCMOS Platform
38. Mitigation of Single-Event Effects in SiGe-HBT Current-Mode Logic Circuits
39. Response of Integrated Silicon Microwave pin Diodes to X-Ray and Fast-Neutron Irradiation.
40. The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs
41. New Approach for Pulsed-Laser Testing That Mimics Heavy-Ion Charge Deposition Profiles
42. Electronic-to-Photonic Single-Event Transient Propagation in a Segmented Mach–Zehnder Modulator in a Si/SiGe Integrated Photonics Platform
43. Single-Event Transients in SiGe HBTs Induced by Pulsed X-Ray Microbeam
44. Comparison of Single-Event Transients in SiGe HBTs on Bulk and Thick-Film SOI
45. Using Bessel beams and two-photon absorption to predict radiation effects in microelectronics
46. DC and RF Variability of SiGe HBTs Operating Down to Deep Cryogenic Temperatures
47. Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs
48. Total Ionizing Dose Effects in 70-GHz Bandwidth Photodiodes in a SiGe Integrated Photonics Platform
49. The Effects of Temperature on the Single-Event Transient Response of a High-Voltage (>30 V) Complementary SiGe-on-SOI Technology
50. Using SiGe-on-SOI HBTs to Build 300°C Capable Analog Circuits
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