1. Generic nano-imprint process for fabrication of nanowire arrays
- Author
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Pierret, Aurelie, Hocevar, Moira, Diedenhofen, Silke L., Algra, Rienk E., Vlieg, E., Timmering, Eugene C., Verschuuren, Marc A., Immink, George W. G., Verheijen, Marcel A., and Bakkers, Erik P. A. M.
- Subjects
Condensed Matter - Materials Science - Abstract
A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process., Comment: 12 pages, 4 figures, 2 tables
- Published
- 2009
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