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2. Possibilities of Realizing an Integrated Power Module for Terahertz Wave Generation

Author

Acharyya, Aritra, Biswas, Arindam, Kar, Subal, Satoh, Hiroaki, Inokawa, Hiroshi, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Acharyya, Aritra, editor, Biswas, Arindam, editor, and Inokawa, Hiroshi, editor

Published
2022
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3. Introduction to Millimeter-Wave, Infrared and Terahertz Technologies

Author

Acharyya, Aritra, Biswas, Arindam, Inokawa, Hiroshi, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Oneto, Luca, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zamboni, Walter, Series Editor, Zhang, Junjie James, Series Editor, Acharyya, Aritra, editor, Biswas, Arindam, editor, and Inokawa, Hiroshi, editor

Published
2022
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6. Design and Development of Terahertz Medical Screening Devices

Author

Karthikeyan, M. P., Samanta, Debabrata, Banerjee, Amit, Roy, Arjya, Inokawa, Hiroshi, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Chakraborty, Mithun, editor, Jha, Raman Kr., editor, Balas, Valentina Emilia, editor, Sur, Samarendra Nath, editor, and Kandar, Debdatta, editor

Published
2021
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7. Nanometer-Scale Photodetectors for High Performance and Unique Functionality

Author

Inokawa, Hiroshi, Satoh, Hiroaki, Banerjee, Amit, Nagarajan, Anitharaj, Manivannan, Revathi, Singh, Alka, Nishimura, Tomoki, Isogai, Koki, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Chakraborty, Mithun, editor, Jha, Raman Kr., editor, Balas, Valentina Emilia, editor, Sur, Samarendra Nath, editor, and Kandar, Debdatta, editor

Published
2021
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8. Noncontact Characterization Techniques of GaN-Based Terahertz Devices

Author

Mukherjee, Prajukta, Acharyya, Aritra, Inokawa, Hiroshi, Biswas, Arindam, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Acharyya, Aritra, editor, and Das, Palash, editor

Published
2021
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12. Edge-Terminated AlGaN/GaN/AlGaN Multi-Quantum Well Impact Avalanche Transit Time Sources for Terahertz Wave Generation.

Author

Ghosh, Monisha, Deb, Shilpi Bhattacharya, Acharyya, Aritra, Biswas, Arindam, Inokawa, Hiroshi, Satoh, Hiroaki, Banerjee, Amit, Seteikin, Alexey Y., and Samusev, Ilia G.

Subjects
SUBMILLIMETER waves, SCHOTTKY barrier diodes, GALLIUM nitride, ION implantation, OCEAN wave power, QUANTUM wells, MOLE fraction
Abstract

In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1−xN/GaN/AlxGa1−xN material system, with a fixed aluminum mole fraction of x = 0.3. Two distinct MQW diode configurations, namely p+-n junction-based and Schottky barrier diode structures, were investigated for their THz potential. To enhance reverse breakdown characteristics, we propose employing mesa etching and nitrogen ion implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed Al0.3Ga0.7N/GaN/Al0.3Ga0.7N MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise and improve overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and its applications. [ABSTRACT FROM AUTHOR]

Published
2024
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15. Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors

Author

Ono, Yukinori, Morizur, Jean-Francois, Nishiguchi, Katsuhiko, Takashina, Kei, Yamaguchi, Hiroshi, Hiratsuka, Kazuma, Horiguchi, Seiji, Inokawa, Hiroshi, and Takahashi, Yasuo

Subjects
Condensed Matter - Other Condensed Matter
Abstract

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a clear peak emerges in the conductance versus gate-voltage curves at low temperature. In addition, temperature dependence measurements reveal that the conductance obeys a variable-range-hopping law up to an unexpectedly high temperature of over 100 K. The symmetric dual-gate configuration of the silicon-on-insulator we use allows us to fully characterize the vertical-bias dependence of the conductance. Comparison to computer simulation of the phosphorus impurity band depth-profile reveals how the spatial variation of the impurity-band energy determines the hopping conduction in transistor structures. We conclude that the emergence of the conductance peak and the high-temperature variable-range hopping originate from the band bending and its change by the gate bias. Moreover, the peak structure is found to be strongly related to the density of states (DOS) of the phosphorus impurity band, suggesting the possibility of performing a novel spectroscopy for the DOS of phosphorus, the dopant of paramount importance in Si technology, through transport experiments., Comment: 9 figures

Published
2006
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20. Terahertz Radiation from High Electron Mobility Avalanche Transit Time Sources Prospective for Biomedical Spectroscopy.

Author

Khan, Sahanowaj, Acharyya, Aritra, Inokawa, Hiroshi, Satoh, Hiroaki, Biswas, Arindam, Dhar, Rudra Sankar, Banerjee, Amit, and Seteikin, Alexey Y.

Subjects
ELECTRON mobility, SUBMILLIMETER waves, BREAKDOWN voltage, SEMICONDUCTOR manufacturing, ELECTRON gas, CARRIER density, TWO-dimensional electron gas, SCHOTTKY barrier
Abstract

A Schottky barrier high-electron-mobility avalanche transit time (HEM-ATT) structure is proposed for terahertz (THz) wave generation. The structure is laterally oriented and based on AlGaN/GaN two-dimensional electron gas (2-DEG). Trenches are introduced at different positions of the top AlGaN barrier layer for realizing different sheet carrier density profiles at the 2-DEG channel; the resulting devices are equivalent to high–low, low–high and low-high–low quasi-Read structures. The DC, large-signal and noise simulations of the HEM-ATTs were carried out using the Silvaco ATLAS platform, non-sinusoidal-voltage-excited large-signal and double-iterative field-maximum small-signal simulation models, respectively. The breakdown voltages of the devices estimated via simulation were validated by using experimental measurements; they were found to be around 17–18 V. Under large-signal conditions, the series resistance of the device is estimated to be around 20 Ω. The large-signal simulation shows that the HEM-ATT source is capable of delivering nearly 300 mW of continuous-wave peak power with 11% conversion efficiency at 1.0 THz, which is a significant improvement over the achievable THz power output and efficiency from the conventional vertical GaN double-drift region (DDR) IMPATT THz source. The noise performance of the THz source was found to be significantly improved by using the quasi-Read HEM-ATT structures compared to the conventional vertical Schottky barrier IMPATT structure. These devices are compatible with the state-of-the-art medium-scale semiconductor device fabrication processes, with scope for further miniaturization, and may have significant potential for application in compact biomedical spectroscopy systems as THz solid-state sources. [ABSTRACT FROM AUTHOR]

Published
2023
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32. Performance improvement of on-chip integrable terahertz microbolometer arrays using nanoscale meander titanium thermistor.

Author

Banerjee, Amit, Satoh, Hiroaki, Elamaran, Durgadevi, Sharma, Yash, Hiromoto, Norihisa, and Inokawa, Hiroshi

Subjects
BOLOMETERS, NANOTECHNOLOGY, TITANIUM, ANTENNAS (Electronics), MICROMACHINING, MAGNETIC coupling
Abstract

In this study, uncooled antenna-coupled microbolometer arrays were fabricated to detect terahertz waves by using nanoscale meander-shaped Ti thermistors with design widths of DW = 0.1 and 0.2 μm, respectively, on SiO2 and SiNx substrates. Each unit device with a thermistor with DW = 0.1 μm yielded double the electrical responsivity (787 V/W) of unit devices with thermistors with DW = 0.2 μm (386 V/W) at the maximum allowable bias current (Ib = 50 for DW = 0.1 μm and 100 μA for DW = 0.2 μm, respectively). However, the calculated noise-equivalent power (NEP) of unit devices with thermistors with DW = 0.1 μm was 1.85 × 10 − 10 W / Hz at Ib = 50 μA and 1.58 × 10 − 10 W / Hz at Ib = 100 μA for unit devices with thermistors with DW = 0.2 μm. Hence, the reduction in DW did not lead to an improvement in NEP. This study validates our previous investigation into the effect of width on such device parameters such as the temperature coefficient of resistance (TCR) and resistivity in the context of device miniaturization. The smaller grain size in thinner metal interconnects (thermistors) can be linked to the lower TCR and increased resistivity of the devices. Thus, the enhancement in responsivity in the design was largely due to the nanoscale meander design that, however, was detrimental to the noise response of the devices. These devices with nanoscale Ti meander thermistors deliver high responsivity in unit devices with scope for further miniaturization and have significant potential for application as on-chip integrable detector arrays. [ABSTRACT FROM AUTHOR]

Published
2019
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37. Measurement of thermal conductivity and thermal diffusivity of one-dimensional-system material by scanning electron microscopy and infrared thermography

Author

Baskaran, Palanisamy, primary, Nanao, Ryo, additional, Yamanashi, Yojiro, additional, Sakaida, Masaki, additional, Suzuki, Yuhei, additional, Navaneethan, Mani, additional, Nisha, Kuruvankatil Dharmajan, additional, Hayakawa, Yasuhiro, additional, Inokawa, Hiroshi, additional, Shimomura, Masaru, additional, Murakami, Kenji, additional, and Ikeda, Hiroya, additional

Published
2021
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45. Mechanism of metal-semiconductor transition in electric properties of single-walled carbon nanotubes induced by low-energy electron irradiation

Author

Kanzaki, Kenichi, Suzuki, Satoru, Inokawa, Hiroshi, Ono, Yukinori, Vijayaraghavan, Aravind, and Kobayashi, Yoshihiro

Subjects
Nanotubes -- Electric properties, Nanotubes -- Structure, Field-effect transistors -- Design and construction, Electron beams -- Research, Physics
Abstract

A method for the electric behavior induced metal-semiconductor transition in single-walled nanotubes (SWNT) field-effect transistors (FETs) is presented. It is suggested that the energy barrier arising from an electric behavior-induced defect and by gate-induced band bending can provide details of the transition behavior.

Published
2007

48. A compact analytical model for asymmetric single electron tunneling transistors

Author

Inokawa, Hiroshi and Takahashi, Yasuo

Subjects
Junction transistors -- Electric properties, Semiconductor device, Business, Electronics, Electronics and electrical industries
Abstract

Single-electron tunneling transistor (SETT) can work in smaller dimensions and with less power consumption, hence it is a very promising device. Analysis of the behavior of SETT in circuits is important to take full advantage of the unique features of SETT in practical application.

Published
2003

49. A multiple-Valued logic and memory with combined single-electron and metal-oxide semiconductor transistors

Author

Inokawa, Hiroshi, Fujiwara, Akira, and takahashi, Yasuo

Subjects
Gate arrays -- Analysis, Silicon-on-isolator -- Electric properties, Metal oxide semiconductors -- Electric properties, Field programmable gate array, Business, Electronics, Electronics and electrical industries
Abstract

The devices combining single-electron and metal-oxide-semiconductor (MOS) transistors are newly proposed as multiple-valued (MV) logic. A universal literal gate that has sharp transfer characteristics and large output amplitude, is obtained by combining a single-electron devices (SET) with a MOSFET, which can be fabricated on the silicon-on-insulator (SOI) wafer by the pattern-dependent oxidation (PADOX) process.

Published
2003

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