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β-Ga2O3 has received widespread attention due to its ultrawide bandgap, which potentially permits applications in extreme conditions. Ultrafast laser irradiation of β-Ga2O3 provides a means for exploring the response of the material under such conditions, which could result in the generation of point defects as well as a localized modification of structural features that could yield properties that differ from the pristine surface. However, an understanding of defects generated by femtosecond laser irradiation in the vicinity of laser-induced periodic surface structures (LIPSS) remains to be explored. We correlate topographic features with optical and electronic properties by combining near-nm scale resolution cathodoluminescence with Kelvin probe force microscopy. Defects are found to correlate with crystalline order and near-surface morphology, as well as changes in work function. They are also suggested to be closely related to the formation of high spatial frequency LIPSS. These results suggest a need for precise tuning of laser irradiation conditions as well as possible post-processing to control defects in future Ga2O3 devices. [ABSTRACT FROM AUTHOR]

β-Ga2O3 has received widespread attention due to its ultrawide bandgap, which potentially permits applications in extreme conditions. Ultrafast laser irradiation of β-Ga2O3 provides a means for exploring the response of the material under such conditions, which could result in the generation of point defects as well as a localized modification of structural features that could yield properties that differ from the pristine surface. However, an understanding of defects generated by femtosecond laser irradiation in the vicinity of laser-induced periodic surface structures (LIPSS) remains to be explored. We correlate topographic features with optical and electronic properties by combining near-nm scale resolution cathodoluminescence with Kelvin probe force microscopy. Defects are found to correlate with crystalline order and near-surface morphology, as well as changes in work function. They are also suggested to be closely related to the formation of high spatial frequency LIPSS. These results suggest a need for precise tuning of laser irradiation conditions as well as possible post-processing to control defects in future Ga2O3 devices. [ABSTRACT FROM AUTHOR]

We attempted to deposit a platinum (Pt) layer onto a tungsten trioxide (WO3) thin film (Pt/WO3). The Pt layer deposited on WO3 was oxidized by calcining Pt/WO3 in air to form PtOx/WO3. An n-type anomalous photo-thermoelectric (photo-TE) effect was confirmed for Pt/WO3 and Pt/HyWO3−x. HyWO3−x is a protonated WO3 after the gaschromic (GC) reaction of WO3 in Pt/WO3. The anomalous photo-TE effect was that both the electrical conductivity (σphoto) and the absolute value of the Seebeck coefficient (Sphoto) increased under UV light or visible light irradiation. After stopping the irradiation, σphoto and Sphoto decreased. In contrast, an n-type normal photo-TE effect was observed for PtOx/HyWO3−x after the GC reaction of PtOx/WO3, in which σphoto increased and the absolute value of Sphoto decreased under ultraviolet (UV) light irradiation, and vice versa after stopping the irradiation. These findings indicate that Pt was responsible for the anomalous photo-TE effect due to the electron accumulation capability of Pt, to which electrons were transferred from the conduction band of HyWO3−x. In contrast, electrons could not energetically transfer from HyWO3−x to PtO2, which existed in PtOx particles at the surface. Therefore, PtOx/HyWO3−x behaved similar to sole HyWO3−x, indicating the normal photo-TE effect. [ABSTRACT FROM AUTHOR]

Strain engineering using ion beams is a current topic of research interest in semiconductor materials. Synchrotron-based high-resolution x-ray diffraction has been utilized for strain-depth analysis in GaAs irradiated with 300 keV Ar and 4H-SiC and GaAs irradiated with 100 MeV Ag ions. The direct displacement-related defect formation, anticipated from the elastic energy loss of Ar ions, can well explain the irradiation-induced strain depth profiles. The maximum strain in GaAs is evaluated to be 0.88% after Ar irradiation. The unique energy loss depth profile of 100 MeV Ag (swift heavy ions; SHIs) and resistance of pristine 4H-SiC and GaAs to form amorphous/highly disordered ion tracks by ionization energy loss of monatomic ions allow us to examine strain buildup due to the concentrated displacement damage by the elastic energy loss near the end of ion range (∼ 12 μ m). Interestingly, for the case of SHIs, the strain-depth evolution requires consideration of recovery by ionization energy loss component in addition to the elastic displacement damage. For GaAs, strain builds up throughout the ion range, and the maximum strain increases and then saturates at 0.37% above an ion fluence of 3 × 10 13 Ag/cm 2. For 4H-SiC, the maximum strain reaches 4.6% and then starts to recover for fluences above 1 × 10 13 Ag/cm 2. Finally, the contribution of irradiation defects and the purely mechanical contribution to the total strain have been considered to understand the response of different compounds to ion irradiation. [ABSTRACT FROM AUTHOR]

The outstanding radiation damage stability of an NiCoCrFePd high entropy alloy (HEA) as compared to conventional alloys poses the question for the mechanism of an ion–matter interaction. The positron annihilation lifetime spectroscopic and TEM (transmission electron microscopic) measurements are implemented to trace different kinds of defects produced by 120 MeV Au+9 ion irradiation and their evolution as a function of ion fluence. The variation of lifetimes and corresponding intensities with the ion fluence indicates the formation of dislocation-type defects at a lower ion fluence and vacancy clusters at a higher ion fluence caused by coalescence or agglomeration of dislocation defects. Formation of different types of defects in turn modulates the strain development inside the crystal. Additionally, the HR-TEM investigation of NiCoCrFePd HEA also exhibits the formation of dislocation and vacancy clusters with the average size of vacancy clusters increases from ∼2.9 ± 0.1 to ∼3.8 ± 0.1 nm with the increases in the ion fluence. Surprisingly, the average defect cluster size in NiCoCrFePd HEA is suppressed compared to NiCoCrFe MEA, thereby showing the enhanced radiation stability on Pd incorporation due to the high defect recombination caused by reduced thermal conductivity and high lattice distortion. Nano-indentation measurement shows that the radiation hardening behavior of the NiCoCrFePd HEA responded slowly owing to its damage suppression property as compared to the NiCoCrFe MEA. Additionally, softening behavior also appeared at an early fluence in NiCoCrFe MEA compared to the NiCoCrFePd HEA signifying its excellent resistance to defect accumulation. [ABSTRACT FROM AUTHOR]

This study explores the enhancement of thermoelectric response in a zigzag chain through irradiation with arbitrarily polarized light. The irradiation induces changes in hopping strengths, creating an asymmetric transmission profile around the Fermi energy, which is a crucial factor for achieving a higher figure of merit (FOM). Specific light configurations result in an FOM exceeding unity. We employ the Floquet–Bloch ansatz and minimal coupling scheme to model the irradiation effect, with transport properties evaluated using Green's function technique within the Landauer–Büttiker formalism. The investigation covers electrical conductance, thermopower, and thermal conductance due to electrons and phonons. Our research deepens understanding and opens avenues for tailoring nanostructures to fine-tune thermoelectric properties, advancing highly efficient energy conversion devices exploiting irradiation effects. [ABSTRACT FROM AUTHOR]

Surface flashover that occurs on the surface of epoxy resin (EP) is one of the main causes of insulation failure in the power system. The newly emerging polar groups on the surface are highly desirable for enhancing the surface flashover performance of EP. Here, we present a facile ultraviolet (UV) irradiation method to enable the controlled introduction of C–OH and C = O groups on the EP surface. The resultant UV-irradiated EPs (UV-EPs) are highly uniform with little variation in surface roughness while exhibiting tunable polar content with the irradiation time. We also present the first systematic investigation into the effect of UV irradiation time on the surface flashover voltage of UV-EPs, with a maximum increase of 23.07% compared to the pristine EP. Mechanistic studies suggest that the enhancement of the surface flashover voltage is mainly dominated by the density of the deep trap, which is strongly dependent on the UV-induced C–OH and C = O groups on the surface. Besides that, the UV-EPs also display long-term stability due to the stable presence of polar groups, which further demonstrates the feasibility of this method for the development of EP with excellent properties. [ABSTRACT FROM AUTHOR]

For photoelectrochemical water splitting, tungsten trioxide (WO3) films with a monoclinic structure were synthesized on fluorine-doped tin oxide coated glass substrates with a vacuum evaporation method. To control the WO3 film thickness from 0.42 to 5.6 μm, the crystal orientation was intergraded from the (200) crystal plane to the (002) one. In x-ray diffraction measurements, the intensity ratio of the (002) crystal plane to the (200) one was defined as rp. In the WO3 photoelectrode with higher (002)-preferred orientation, the photocurrent continued to flow even when the incident light against the photoelectrode was completely blocked after the irradiation for 60 s. This suggests that hydrogen continues to be produced owing to the electrons charged by the formation of a hydrogen tungsten bronze (HxWO3) phase. After 72 s, the photocurrent density of the WO3 photoelectrode with rp = 42 became one-tenth of the value before the incident light was blocked. This charge release time was remarkably long compared to those of the WO3 photoelectrodes with (200)-preferred orientation and non-orientation. Therefore, it was considered that the hydrogen ion diffusion through the defects in the WO3 crystals tends to occur in the [002] crystal direction. However, the improvement in the (002)-preferred orientation can facilitate the structural change from the WO3 phase to the HxWO3 one for the entire film. [ABSTRACT FROM AUTHOR]

The study of light-emitting defects in silicon created by ion implantation has gained renewed interest with the development of quantum optical devices. Improving techniques for creating and optimizing these defects remains a major focus. This work presents a comprehensive analysis of a photoluminescence line at a wavelength of 1240 nm (1 eV) caused by defects arising from the ion irradiation of the SiO2/Si system and subsequent thermal annealing. It is assumed that this emission is due to the formation of defect complexes WM with trigonal symmetry similar to the well-known W-centers. A distinctive feature of these defects is their thermal resistance up to temperatures of 800 °C and less pronounced temperature quenching compared to the W-line. The difference in the properties of these defect centers and W-centers can be explained by their different defect environments, resulting from the larger spatial separation between vacancies and interstitial atoms diffusing from the irradiated layer. This, in turn, is associated with the difference in the distribution of primary radiation defects during irradiation of the SiO2/Si system and silicon not covered with a SiO2 film. The patterns of changes in the WM line depending on various factors, such as the thickness of the SiO2 film, type of conductivity and impurity concentration in the original silicon, irradiation parameters, and annealing regimes, is studied and explained in detail. These findings demonstrate the benefits of this new approach when compared to previous methods. [ABSTRACT FROM AUTHOR]

Extensive experimental and computational studies have demonstrated outstanding physical and chemical properties of the novel materials of compositionally complex carbides (CCCs), enabling their promising applications in advanced fission and fusion energy systems. This perspective provides a comprehensive overview of radiation damage behavior reported in the literature to understand the fundamental mechanisms related to the impact of multi-principal metal components on phase stability, irradiation-induced defect clusters, irradiation hardening, and thermal conductivity of compositionally complex carbides. Several future research directions are recommended to critically evaluate the feasibility of designing and developing new ceramic materials for extreme environments using the transformative "multi-principal component" concept. Compared to the existing materials for nuclear applications including stainless steels, nickel alloys, ZrC, SiC, and potentially high-entropy alloys, as well as certain other compositionally complex ceramic families. CCCs appear to be more resistant to amorphization, growth of irradiation defect clusters, and void swelling. [ABSTRACT FROM AUTHOR]

The authors implanted P atoms at 50 and 140-keV energies with respective fluences of 1 × 10 14 and 2 × 10 14 /cm 2 into diamond thin films synthesized by chemical vapor deposition on the type-Ib diamond substrate formed by high-pressure and high-temperature conditions. The occupational sites of implanted P atoms were determined in each processing stage of P implantation, ion-beam-induced epitaxial crystallization (IBIEC) annealing by 3-MeV-Ne 2 + ion irradiation at 750 ° C, and thermal annealing at 850 ° C in vacuum, by quantitatively comparing the random and channeling yields in Rutherford backscattering (RBS) measurements. In the analysis of RBS spectra, simulated distributions were fitted to the experimentally obtained spectra and we quantitatively identified the occupational sites and ratio of implanted P atoms. In addition, we investigated the diffusion phenomenon of implanted P atoms during annealing processes from the depth profile of scattered He ions. Consequently, the averaged occupational ratio in the substitutional lattice site was stably recorded around 50%. From the depth profile in the RBS spectra, thermal diffusion of implanted P atoms was clearly observed during the last thermal annealing after MeV-IBIEC annealing. We finally discuss the potentials of the MeV-IBIEC irradiation at relatively low temperatures applying to useful and credible annealing methods for electrical activation as well as recovery of damaged crystallinity. [ABSTRACT FROM AUTHOR]

Optical and electrical properties of Hf- and Zn-doped β-Ga2O3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga2O3:Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga2O3:Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga2O3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies. [ABSTRACT FROM AUTHOR]

Optical and electrical properties of Hf- and Zn-doped β-Ga2O3 samples, which are n-type and insulating, respectively, were altered via high-energy electron irradiation at 2.5 or 0.5 MeV. The β-Ga2O3:Hf samples irradiated with 2.5 MeV electrons experienced a color change from blue to yellow and a large drop in conductivity, attributed to the creation of gallium vacancies, which compensate donors. This irradiation resulted in the absence of free carrier absorption and the presence of Cr3+ photoluminescence (PL). PL mapping prior to irradiation revealed optically active ZnO precipitates that formed during the growth of β-Ga2O3:Zn. These precipitates have a 384 nm (3.23 eV) stacking fault emission in the core; in the outer shell of the precipitate, the PL blue-shifts to 377 nm (3.29 eV) and a broad defect band is observed. After 0.5 MeV electron irradiation, the defect band broadened and increased in intensity. The blue PL band (435 nm) of β-Ga2O3 was enhanced for both Hf- and Zn-doped samples irradiated with 0.5 MeV. This enhancement is correlated with an increase in oxygen vacancies. [ABSTRACT FROM AUTHOR]

We studied the photoluminescence decay kinetics of three nanosized anatase TiO2 photocatalysts (particle diameter: 7, 25, or 200 nm) at the pico- and nanosecond timescales for elucidating the origin of the luminescence. Luminescence spectra from these photocatalysts obtained under steady-state excitation conditions comprised green luminescence that decayed on the picosecond timescale and red luminescence that persisted at the nanosecond timescale. Among the photocatalysts with different sizes, there were marked differences in the rate of luminescence decay at the picosecond timescale (<600 ps), although the spectral shapes were comparable. The similarity in the spectral shape indicated that self-trapped excitons (STEs) directly populated in the bulk of the particle by light excitation emit the luminescence in a picosecond timescale, and the difference in the rate of luminescence decay originated from the quenching at the particle surface. Furthermore, we theoretically considered excitation light intensity dependence on the quantum yield of the luminescence and found that the quenching reaction was not limited by the diffusion of the STEs but by the reaction at the particle surface. Both the spectral shape and time-evolution of the red luminescence from the deep trapped excitons in the nanosecond timescale varied among the photocatalysts, suggesting that the trap sites in different photocatalysts have different characteristics with respect to luminescence. Therefore, the relation between trap states and photocatalytic activity will be elucidated from the red luminescence study. [ABSTRACT FROM AUTHOR]

Nanopore/pillar formation on a Ge substrate can be induced by ion irradiation, which activates the ion beam sputtering and self-organization of point defects. Considering that the size and morphology of nanostructures are dependent on damage production, the irradiation parameters significantly affect nanostructuring. Here, the projected range of incident ions was selected as a parameter to be investigated. The projected range was modified by adding an Au buffer layer on the surface of the substrate, enabling the ions to stop in a shallower layer. The experimental results showed that the deposited Au layer affected the size and morphology of the nanostructures produced by ion irradiation. As a unique morphology, network-like structures were observed on the Au-deposited substrates. These structures were larger than ordinary porous structures. [ABSTRACT FROM AUTHOR]

The increasing presence of 1,1,1,2-tetrafluoroethane (CF3CH2F) in the atmosphere has prompted detailed studies into its complex photodissociation behavior. Experiments focusing on CF3CH2F irradiation have unveiled an array of ions, with the persistent observation of the rearrangement product CHF2+ not yet fully understood. In this work, we combine density functional theory, coupled-cluster calculations with a complete basis set formalism, and atom-centered density matrix propagation molecular dynamics to investigate the energetics and dynamics of different potential pathways leading to CHF2+. We found that the two-body dissociation pathway involving an HF rearrangement, which was previously considered complex for CHF2+ formation, is actually straightforward but not likely due to the facile loss of HF. In contrast, our calculations reveal that the H elimination pathway, once thought of as a potential route to CHF2+, is not only comparably disadvantageous from both thermodynamic and kinetic points of view but also does not align with experimental data, particularly the lack of a rebound peak at m/z 101–102. We establish that the formation of CHF2+ is predominantly via the HF elimination channel, a conclusion experimentally corroborated by studies involving the trifluoroethylene cation CF2CHF+, a key intermediate in this process. [ABSTRACT FROM AUTHOR]

Vanadium dioxide (VO2) manifests an abrupt metal–insulator transition (MIT) from monoclinic to rutile phases, with potential use for tunable electronic and optical properties and spiking neuromorphic devices. Understanding pathways to modulate electronic transport in VO2, as well as its response to irradiation (e.g., for space applications), is critical to better enable these applications. In this work, we investigate the selective modulation of electronic transport in VO2 films subject to different 10 keV helium ion (He+) fluences. Under these conditions, the resistivity in the individual monoclinic and rutile phases varied by 50%–200%, while the MIT transformation temperature remains constant within 4 °C independent of irradiation fluence. Importantly, different trends in the resistivity of the monoclinic and rutile phases were observed both as a function of total He fluence as well as in films grown on different substrates (amorphous SiO2/Si vs single crystal Al2O3). Through a combination of measurements including majority carrier sign via Seebeck, low frequency noise, and TEM, our investigation supports the presence of different kinds of point defects (V in; O in), which may arise due to grain boundary defect interactions. Our work suggests the utility of He irradiation for the selective modulation of VO2 transport properties for neuromorphic, in contrast to other established but non-selective methods, like doping. [ABSTRACT FROM AUTHOR]

Low-energy ion beam irradiation, combined with the introduction of impurities, presents a promising approach for nanopatterning silicon (Si) surfaces. In this research, we investigate the surface evolution of Si (100) surfaces irradiated by 75 eV helium (He) plasma, in the presence of tantalum (Ta), traditionally regarded as an impurity incapable of initiating pattern formation, as evidenced in prior studies. The Ta impurities are pre-deposited onto the Si surfaces using the magnetron sputtering method, which offers a more controlled and quantifiable approach compared with the conventional co-deposition route. After irradiation at 800 K, dense cone arrays are produced on the Si surface. The growth of the cones is explored for fluence spanning (1–10) × 1025 m−2. The cross-sectional scanning electron microscope images indicate that the cone lengths and base width are well characterized by t1/2 dependence. The kinetics of the cone growth follow Fick's law, characterized by an effective diffusive mechanism with the coefficients of diffusion: D = 6.49 ± 0.83 × 10−16 m−2 s−1. Transmission electron microscope observations reveal that the cone has distinct inner and outer parts with different microstructures and a clear interface. The growth mechanism of these cones is elucidated as a composite process involving preferential sputtering, the destabilizing influence of He bubbles, and the migration of adatoms. [ABSTRACT FROM AUTHOR]

In this study, the degradation behavior of flexible GaInP/GaAs/InGaAs (IMM3J) solar cells and their metamorphic subcells under 1 MeV electron irradiation was investigated. The remaining factors such as short-circuit current density (Jsc), open-circuit voltage (Voc), and maximum power (Pmax) were 95.62, 85.52, and 79.73%, respectively, at an irradiation fluence of 2 × 1015 e/cm2. The spectral responses of the InGaAs and GaAs subcells degraded significantly, and the InGaAs subcell experienced greater degradation than the GaAs subcell after irradiation. In addition, the current-limiting unit was switched from GaInP to InGaAs after irradiation. Defect analysis by deep-level transient spectroscopy (DLTS) revealed that with increasing irradiation fluence, the defects that had the greatest impact on the performance of GaAs subcells were EV + 0.36 and EV + 0.42 eV. For InGaAs subcells, the defects that had the greatest impact on the performance were EV + 0.29 and EV + 0.24 eV. The decrease in the minority carrier lifetime is the main reason for the decrease in the electrical performance of solar cells, and the variation in the effective minority carrier lifetime (τeff) in the subcells with the irradiation fluence was calculated based on the DLTS results. At a fluence of 2 × 1015 e/cm2, the τeff of the GaAs and InGaAs subcells decreased from 2.93 × 10−10 and 9.10 × 10−10 s to 1.56 × 10−11 and 1.60 × 10−12 s, respectively. These results provide a reference for predicting the degradation of short-circuit current and open-circuit voltage of flexible IMM3J. [ABSTRACT FROM AUTHOR]

The nitrogen-vacancy (NV) center is a promising candidate to realize practical quantum sensors with high sensitivity and high spatial resolution at room temperature and atmospheric pressure. In conventional high-frequency AC magnetometry with NV centers, the setup requires a pulse sequence with an appropriate time synchronization and strong microwave power. To avoid these practical difficulties, AC magnetometry using continuous-wave optically detected magnetic resonance (CW-ODMR) was recently demonstrated. That previous study utilized radio frequency (RF)-dressed states generated by the coherent interaction between the electron spin of the NV center and the RF wave. However, the drawback of this method is that the detectable frequency of the AC magnetic fields is fixed. Here, we propose and demonstrate frequency-tunable magnetic field sensing based on CW-ODMR. In the new sensing scheme, we obtain RF double-dressed states by irradiation with RF fields at two different frequencies. One creates the RF-dressed states and changes the frequency of the target AC field. The other is a target AC field that induces a change in the CW-ODMR spectrum by generating the RF double-dressed states through coherent interaction with the RF-dressed states. The sensitivity of our method is estimated to be comparable to or even higher than that of the conventional method based on the RF field with a single frequency. The estimated bandwidth is 7.5 MHz, higher than that of the conventional method using the RF-dressed states. Our frequency-tunable magnetic field sensor based on CW-ODMR paves the way for new applications in diamond devices. [ABSTRACT FROM AUTHOR]

We have measured the absolute doubly differential angular sputtering yield for 20 keV Kr+ impacting a polycrystalline Cu slab at an incidence angle of θi = 45° relative to the surface normal. Sputtered Cu atoms were captured using collectors mounted on a half dome above the sample, and the sputtering distribution was measured as a function of the sputtering polar, θs, and azimuthal, ϕs, angles. Absolute results of the sputtering yield were determined from the mass gain of each collector, the ion dose, and the solid angle subtended, after irradiation to a total fluence of ∼1 × 1018 ions/cm2. Our approach overcomes shortcomings of commonly used methods that only provide relative yields as a function of θs in the incidence plane (defined by the ion velocity and the surface normal). Our experimental results display an azimuthal variation that increases with increasing θs and is clearly discrepant with simulations using binary collision theory. We attribute the observed azimuthal anisotropy to ion-induced formation of micro- and nano-scale surface features that suppress the sputtering yield through shadowing and redeposition effects, neither of which are accounted for in the simulations. Our experimental results demonstrate the importance of doubly differential angular sputtering studies to probe ion sputtering processes at a fundamental level and to explore the effect of ion-beam-generated surface roughness. [ABSTRACT FROM AUTHOR]

There is an ongoing debate on the apparent depletion of sulfur in the interstellar medium (ISM) compared to its universal abundance; therefore, the investigation of sulfurous compounds at low temperatures is of utmost importance. This work aims to study thioacetamide, H3C–C(=S)–NH2, in low-temperature inert Ar and para-H2 matrices by IR spectroscopy. The samples have been exposed to various sources of irradiation, such as Lyman-α or laser UV photons as well as energetic electrons. Using different host materials enabled assessing the matrix's impact on precursor decomposition. The response of the molecule to different types of irradiation has also been evaluated. The existence of three main decomposition channels were deduced: formation of (i) CH3, CH4, and HNCS; (ii) H2S and H2C=C=NH; and (iii) NH3 and H2C=C=S. The H3C–CN and H3C–NC isomers of H2C=C=NH could also be identified. Secondary products such as HNC and HCN were also detected in the quantum solid para-H2 in contrast to the more rigid Ar matrix. The listed decomposition products have been observed in the ISM, with the exception of H2C=C=NH and H3C–NC. The results point to the potential sensitivity of the precursor molecule to energetic radiation in space environments. Finally, the findings of this work will serve as a foundation for future irradiation experiments using the astrochemically more relevant pure thioacetamide ice. [ABSTRACT FROM AUTHOR]

The α-hydroxyethyl radical (CH3·CHOH, 2A) is a key intermediate in ethanol biochemistry, combustion, atmospheric chemistry, radiation chemistry, and astrochemistry. Experimental data on the vibrational spectrum of this radical are crucially important for reliable detection and understanding of the chemical dynamics of this species. This study represents the first detailed experimental report on the infrared absorption bands of the α-hydroxyethyl radical complemented by ab initio computations. The radical was generated in solid para-H2 and Xe matrices via the reactions of hydrogen atoms with matrix-isolated ethanol molecules and radiolysis of isolated ethanol molecules with x rays. The absorption bands with maxima at 3654.6, 3052.1, 1425.7, 1247.9, 1195.6 (1177.4), and 1048.4 cm−1, observed in para-H2 matrices appearing upon the H· atom reaction, were attributed to the OHstr, α-CHstr, CCstr, COstr + CCObend, COstr, and CCstr + CCObend vibrational modes of the CH3·CHOH radical, respectively. The absorption bands with the positions slightly red-shifted from those observed in para-H2 were detected in both the irradiated and post-irradiation annealed Xe matrices containing C2H5OH. The results of the experiments with the isotopically substituted ethanol molecules (CH3CD2OH and CD3CD2OH) and the quantum-chemical computations at the UCCSD(T)/L2a_3 level support the assignment. The photolysis with ultraviolet light (240–300 nm) results in the decay of the α-hydroxyethyl radical, yielding acetaldehyde and its isomer, vinyl alcohol. A comparison of the experimental and theoretical results suggests that the radical adopts the thermodynamically more stable anti-conformation in both matrices. [ABSTRACT FROM AUTHOR]

Strain plays an important role in the performance and reliability of AlGaN/GaN high electron mobility transistors (HEMTs). However, the impact of strain on the performance of proton irradiated GaN HEMTs is yet unknown. In this study, we investigated the effects of strain relaxation on the properties of proton irradiated AlGaN/GaN HEMTs. Controlled strain relief is achieved locally using the substrate micro-trench technique. The strain relieved devices experienced a relatively smaller increase of strain after 5 MeV proton irradiation at a fluence of 5 × 1014 cm−2 compared to the non-strain relieved devices, i.e., the pristine devices. After proton irradiation, both pristine and strain relieved devices demonstrate a reduction of drain saturation current (Ids,sat), maximum transconductance (Gm), carrier density (ns), and mobility (μn). Depending on the bias conditions the pristine devices exhibit up to 32% reduction of Ids,sat, 38% reduction of Gm, 15% reduction of ns, and 48% reduction of μn values. In contrast, the strain relieved devices show only up to 13% reduction of Ids,sat, 11% reduction of Gm, 9% reduction of ns, and 30% reduction of μn values. In addition, the locally strain relieved devices show smaller positive shift of threshold voltage compared to the pristine devices after proton irradiation. The less detrimental impact of proton irradiation on the transport properties of strain relieved devices could be attributed to reduced point defect density producing lower trap center densities, and evolution of lower operation related stresses due to lower initial residual strain. [ABSTRACT FROM AUTHOR]

Electron-driven processes in isolated curcumin (CUR) molecules are studied by means of dissociative electron attachment (DEA) spectroscopy under gas-phase conditions. Elementary photostimulated reactions initiated in CUR molecules under UV irradiation are studied using the chemically induced dynamic nuclear polarization method in an acetonitrile solvent. Density functional theory is applied to elucidate the energetics of fragmentation of CUR by low-energy (0–15 eV) resonance electron attachment and to characterize various CUR radical forms. The adiabatic electron affinity of CUR molecule is experimentally estimated to be about 1 eV. An extra electron attachment to the π1* LUMO and π2* molecular orbitals is responsible for the most intense DEA signals observed at thermal electron energy. The most abundant long-lived (hundreds of micro- to milliseconds) molecular negative ions CUR– are detected not only at the thermal energy of incident electrons but also at 0.6 eV, which is due to the formation of the π3* and π4* temporary negative ion states predicted to lie around 1 eV. Proton-assisted electron transfer between CUR molecules is registered under UV irradiation. The formation of both radical-anions and radical-cations of CUR is found to be more favorable in its enol form. The present findings shed some light on the elementary processes triggered in CUR by electrons and photons and, therefore, can be useful to understand the molecular mechanisms responsible for a variety of biological effects produced by CUR. [ABSTRACT FROM AUTHOR]

Pt/GaN Schottky barrier diodes and GaN epitaxial layers on sapphire substrates were studied under swift heavy ion irradiation using 100 MeV O7+ ions having fluences in the range of 1 × 1010–6.4 × 1013 ions/cm2. It was observed that ideality factor, Schottky barrier height, and series resistance increased, while carrier concentration decreased with increasing ion fluence. The ex situ measurements, such as x-ray diffraction and UV–Vis spectroscopy, revealed that GaN layers exhibit negligible variation in structural and bandgap characteristics after irradiation with oxygen ions. The cross-sectional transmission electron microscopy images of the GaN epitaxial layer irradiated at 5 × 1012 ions/cm2 confirmed the absence of irradiation-induced tracks or defect clusters, indicating only point defects that can act as charge traps without structural damage. [ABSTRACT FROM AUTHOR]

An investigation into the effects of 63 MeV proton irradiation on high-sensitivity mid-wave infrared InGaAs/InAsSb nBn devices is performed. Three different structures with various absorber region doping profiles are irradiated and characterized to assess their impact on performance degradation. Minority carrier lifetime is measured using time-resolved photoluminescence and lifetime damage factors are assessed. The majority carrier concentration is determined via capacitance–voltage measurements and dopant introduction rates are calculated. An analysis of dark current density is performed using these material parameters, revealing a reduction in mobility with proton fluence and the emergence of a proton-induced trap energy level. Quantum efficiency is calculated at each proton fluence, and quantum efficiency damage factors show that the graded doping structure exhibits the least reduction of quantum efficiency with dose, attributed to its effective mobility enhancement. Conclusively, detector sensitivity, assessed via shot-noise limited noise-equivalent irradiance, shows that the graded doping structure is the least susceptible to high energy proton irradiation-induced performance degradation. [ABSTRACT FROM AUTHOR]

The quest for lowering energy consumption during thin film growth by magnetron sputtering techniques becomes of particular importance in view of sustainable development goals. As large fraction of the process energy is consumed in substrate heating for the purpose of providing high adatom mobility necessary to grow dense films, the most straightforward strategy toward more environment-friendly processing is to find alternatives to thermally activated surface diffusion. One possibility is offered by high mass metal ion irradiation of the growing film surface, which has been recently shown to be very effective in densification of transition metal nitride layers grown with no external heating, such that Zone 2 microstructures of the structure-zone model are obtained in the substrate temperature Ts range otherwise typical for Zone 1 growth. The large mass difference between the incident ion and the atoms constituting the film results in effective creation of low energy recoils, which leads to film densification at low Ts. Due to their high mass, metal ions become incorporated at lattice sites beyond the near-surface region of intense recoil generation leading to further densification, while preventing the buildup of residual stress. The practical implementation of this technique discussed in this Perspective employs heavy metal targets operating in the high-power impulse magnetron sputtering (HiPIMS) mode to provide periodic metal-ion fluxes that are accelerated in the electric field of the substrate to irradiate layers deposited from direct current magnetron sputtering (DCMS) sources. A key feature of this hybrid HiPIMS/DCMS configuration is the substrate bias that is synchronized with heavy metal ion fluxes for selective control of their energy and momentum. As a consequence, the major fraction of process energy is used at sputtering sources and for film densification, rather than for heating of the entire vacuum vessel. Model material systems include TiN and metastable NaCl-structure Ti1−yAlyN films, which are well-known for challenges in stoichiometry and phase stability control, respectively, and are of high relevance for industrial applications. This Perspective provides a comprehensive overview of the novel film growth method. After presenting basic concepts, time-resolved measurements of ion fluxes at the substrate plane, essential for selective control of metal ion energy and momentum, are discussed. The role of metal ion mass, energy, momentum, and concentration is described in more detail. As some applications require substrate rotation for conformal coating, a section is devoted to the related complexity in the implementation of metal-ion-synchronized growth under industrial conditions. [ABSTRACT FROM AUTHOR]

The luminescence properties of green Ba4Si6O16:Eu2+, rare-earths (RE) (RE = Sc, Y, La and Lu except Pm) phosphors are reported. Their long-lasting phosphorescence is discussed in view of trap depths and concentrations determined from thermally stimulated luminescence experiments. A second emission band centered at 439 nm was evidenced at low temperatures, which stems from the substitution of Eu2+ in the two non-equivalent Ba2+ sites of Ba4Si6O16. The mechanoluminescence properties of Ba4Si6O16:Eu2+, RE phosphors are described, and a new mechanoluminescence mechanism is proposed, in the case where RE = Ho3+, involving a trap distribution from 0.694 to 0.924 eV. Mechanical loading (post UV irradiation) induces a decrease in depth of the trap distribution, leading to an increase of the luminescence intensity, whereas a drop of the luminescence intensity is observed upon unloading, following the faster release of the charge carriers. [ABSTRACT FROM AUTHOR]

Vanadium dioxide (VO2) is a highly attractive and multifunctional material for technological applications due to its metal–insulator transition, which is accompanied by several orders of magnitude changes in electrical resistivity and optical transmissivity. In this work, we report on the metal–insulator transition of VO2 nanoparticles which are produced by a simple, efficient, and low-cost two-step preparation method based on infrared laser irradiation of V2O5 powder dispersed in water and subsequent stoichiometric stabilization by vacuum annealing at 773 K. VO2 nanoparticles have an average size of 36 nm with facet-like contours and undergo a structural phase transition from a monoclinic to a tetragonal phase, accompanied by a metal–insulator transition occurring around 323 K, which is about 17 K lower than bulk VO2. No evidence of the formation of intermediary metastable phases is observed. Our findings reveal that the size of VO2 nanoparticles is a key parameter to moving the transition closer to room temperature, which is important for many applications. [ABSTRACT FROM AUTHOR]

We have used a combination of pico-to-nano temporal/spatial scale computational physics and chemistry modeling of plasma–material interfaces in the tokamak fusion plasma edges to unravel the evolving characteristics, not readily accessible by empirical means, of lithium-, oxygen-, and hydrogen-containing materials of plasma-facing components under irradiation by hydrogen and its isotopes. In the present calculation, amorphous lithium compound surfaces containing oxygen, Li2O, and LiOH were irradiated by 1–100 eV particles at incident angles on the surface ranging from perpendicular to almost grazing angles. Consequential surface processes, reflection, retention, and sputtering were studied at "the same footing" and compared to earlier results from amorphous Li and LiH surfaces. The critical role of charging dynamics of lithium, oxygen, and hydrogen atoms in the surface chemistry during hydrogen-fuel irradiation was found to drive the kinetics and dynamics of these surfaces in unexpected ways that ultimately could have profound effects on fusion plasma confinement behavior and surface erosion. [ABSTRACT FROM AUTHOR]

Tetrathiafulvalene-p-chloranil exhibits photoinduced phase transition (PIPT) between neutral (N) and ionic (I) phases, in which the constituent molecules are approximately charge-neutral and ionic, respectively. In addition to visible-light irradiation, which can induce both N → I and I → N PIPTs, infrared irradiation has been reported to induce the N → I PIPT. These results suggest that N → I and I → N PIPTs can be driven by electronic excitation, and the I → N PIPT can also be driven by vibrational excitation. However, the feasibility of the N → I PIPT using vibrational excitation remains an open question. In this study, we address this issue by simulating the PIPT processes using a nonadiabatic molecular dynamics approach combined with real-time electron dynamics at the level of a semiempirical quantum chemical model, density-functional tight binding. The results show the importance of vibronic interactions in the PIPT processes, thereby suggesting the possibility of N → I PIPT by vibrational excitations with infrared irradiation. [ABSTRACT FROM AUTHOR]

ABSTRACT Power quality improvement in grid‐tied solar photovoltaic (PV) system is one of the emergent current research trends. To address the power quality concern, shunt active power filters (SAPF) are widely deployed and researched in grid‐tied PV systems. This paper presents a simplified adaptive transversal (SAT)‐filter control scheme for the two‐stage PV‐SAPF system. The proposed control has the ability to improve different power quality indices. Also, it features faster operation under steady‐state and under dynamic conditions, better dc‐offset rejection ability due to estimation of the accurate fundamental component of the load current. To justify the effectiveness of the proposed control scheme, a thorough comparison is carried out with different conventional and adaptive control schemes. Simulations and extensive experimental analysis are carried out under severe transient conditions such as balanced‐unbalanced supply, sudden load, and irradiation change scenario. [ABSTRACT FROM AUTHOR]

Reconfigurable and tunable holograms hold significant practical value in the fields of anti‐counterfeiting, optical security, and information display due to their ability to reprogram holographic patterns and create variable visual effects. However, current encryption techniques face challenges in achieving rapid encryption/decryption and ensuring consistent methods. In this study, a method for producing a reconfigurable encryption hologram utilizing the deformation and recovery properties of micropillars in response to liquid is demonstrated. Micron‐scale micropillars are fabricated using femtosecond laser two‐photon polymerization. By exploiting the rapid deformation and recovery capabilities of micropillars with specific pitches and aspect ratios in response to liquids, micropillar structures and holograms are combined to construct reconfigurable holograms. The encrypted pattern information in the reconfigurable holograms is only readable following immersion in alcohol and laser irradiation. The proposed method offers a facile, reversible, reusable, and practical solution for information encryption, with significant potential in anti‐counterfeiting and optical security. [ABSTRACT FROM AUTHOR]

Lead borate glass is the best radiation shielding glass when lead is in high concentration. However, it has low transparency after radiation exposure. Radiation decreases transparency due to chemical and physical changes in the glass matrix, such as creating or healing defects in the glass network. The addition of rare earth elements like cerium and dysprosium oxides to lead borate glasses can improve their transparency and durability as radiation shielding barriers. The newly manufactured glasses' optical absorption, structural, and radiation shielding properties were measured. The optical characteristics of the generated samples were examined to determine the effect of the cerium/dysprosium ratio on the structural alterations, specifically in the presence of bridging oxygen (BO) and non-bridging oxygen (NBO). Incorporating Ce3+ results in peaks at 195 nm for borate units, 225 nm for Ce3+, and a broadened peak at 393 nm due to overlapping peaks for Ce3+ and Ce4+ in the UV region. By adding Dy, multiple peaks are observed at 825, 902, 1095, 1275, and 1684 nm, corresponding to the transition from 6H15/2 ground state to 6F5/2, 6F7/2, 6F9/2, 6F11/2, and 6H11/2. The samples were also tested before and after exposure to gamma irradiation from a 60Co source at a dose of 75 kGy to assess their stability against radiation. The energy gap value during irradiation shows decreased non-bridging oxygen. The energy gap difference before and after irradiation for the M4 sample shows higher NBO to BO conversion, reducing radiation damage and improving structural stability. Furthermore, X-ray photoelectron spectroscopy was utilized to get insight into the coordination chemistry of the created glass samples. The half-value layer (HVL), radiation protection efficiency (RPE), neutron removal cross-section (FRNCS), mean free path (MFP), mass attenuation coefficients (MAC), and effective atomic numbers (Zef) of the glassy structure were calculated theoretically to assess its radiation shielding qualities. The linear attenuation coefficient order for the prepared samples was M1 > M2 > M3 > M4. The FRNCS values were 0.090, 0.083, 0.081, and 0.079 cm−1 for samples M1, M2, M3, and M4, respectively. [ABSTRACT FROM AUTHOR]

This study investigated changes in the crystal lattice, tribological properties and friction mechanism of AISI 316 steel irradiated with swift 160 MeV xenon ions. The irradiation process caused the increased roughness of the steel surface and the swelling of the material. The thickness of the irradiated layer increased by about 13 nm. Following irradiation with the fluences 2.5 × 1014 and 3.2 × 1014 (Xe24+/cm2), martensite formed in the surface layer. Fluctuating changes were also observed with respect to the coefficient of friction and the degree of wear of the AISI 316 steel samples. Irradiation also increased the microhardness of the steel. [ABSTRACT FROM AUTHOR]

Industrial dye effluent causes significant risks to the environment. The present study was focused on photocatalytic degradation of the dye Direct Red 28 using a ternary composite of graphitic carbon nitride, TiO2, and polyorthoanisidine (g-C3N4/TiO2/ POA), prepared by in-situ oxidative polymerization o-anisidine. The synthesized composite g-C3N4/TiO2/POA properties were characterized using different analytical techniques. X-ray diffraction (XRD) results revealed the prominent pattern of TiO2 and g-C3N4 in the composite peak at 2θ° while Fourier transform infrared (FTIR) results provided the confirmation peaks for g-C3N4/TiO2/POA and POA at 1,110 cm-1 and 1,084 cm-1 for C-O-C ether. Scanning electron microscopy (SEM) demonstrated an increase in the average size of the composite up to 428 nm. The energy-dispersive X-ray spectroscopy (EDX) spectrum provided the weight percentages of the C, O, and Ti in the composite were 8.5%, 45.69%, and 45.81%, respectively. The photocatalytic degradation of Direct Red 28 dye under UV irradiation using a composite showed that 86% Direct Red 28 dye was degraded by a 30 mg/L dose of g-C3N4/TiO2/POA in 240 min at pH 2. After four consecutive cycles, the utilized composite showed 79% degradation of Direct Red 28, demonstrating the stability and effectiveness of the g-C3N4/TiO2/POA photocatalyst. The high reusability and efficiency of the g-C3N4/TiO2/POA composite are due to increased light absorption range and reduced e-/h+ recombination rate in the presence of g-C3N4 and POA. [ABSTRACT FROM AUTHOR]

The relationship between the composition of the internal defect states, spectral properties, and correlated electronic structures of wurtzite zinc oxide (ZnO) crystals under 645 MeV Xe35+ irradiation is systematically investigated, employing experimental characterizations combined with first‐principle calculations. Based on the ion irradiation‐induced thermal expansion and relaxation processes, the high concentration of vacancy/interstitial defects produced from the transient disordered phase in molten track states trigger photoelectric changes, as follows: i) the generation of internal defect states effectively reduces the intrinsic bandgap (3.25 eV → 2.66 eV); ii) a large number of defective active sites inhibits the recombination between electron–hole pairs, causing dark conductance and photoconductance to increase with increasing damage levels until optimal fluence is achieved. Based on the density functional theory (DFT) with the GGA + U (GGA = generalized gradient approximation) method, the defective models associated with the different electronic structures, density of states, formation energy, and the nature of the chemical bonding are established. The narrowing of the bandgap observed experimentally and the enhancement of carrier concentration originating from the internal electron defect states are qualitatively verified, therefore laying the foundation for designing future nanoscale photoelectronic devices and microelectronics applications. [ABSTRACT FROM AUTHOR]

The optical properties of quantum dots are significantly influenced by photoactivation. However, the progress in the development of photoactivation carbon dot (CDs) is still stagnant. Herein, a method for preparing photoactivated CDs/NiFe2O4 by introducing affluent defects onto the surface of CDs through modification with NiFe2O4, extremely filling the gap of photoactivated CDs is proposed. Interestingly, a fantastic fluorescence detection strategy in a unique “OFF‐ON‐OFF” mode, combined with Ag+‐assisted fluorescence enhancement, to establish a dual‐channel regulation mechanism for ultra‐sensitive detection of Hg2+ is first proposed. By increasing surface traps and non‐radiative recombination, defect‐induced manipulation on the surface of CDs creates favorable conditions for enhancing photoactivation capacity. Unexpectedly, the CDs/NiFe2O4 shows a 25‐fold enhancement in fluorescence intensity after exposure to UV‐lamp. Compared to CDs/NiFe2O4, Ag+‐assisted photoactivation CDs/NiFe2O4 exhibits superior selectivity and sensitivity for Hg2+ detection, with low detection limits of 0.7 nM. Moreover, TiO2@CDs/NiFe2O4 catalyst is successfully prepared by anchoring CDs/NiFe2O4 onto the surface of TiO2, which demonstrates efficient degradation of tetracycline within 90 min under visible light irradiation, with a degradation rate of 98.3%. This work first provides a novel defects modification strategy for developing highly active photoactivated CDs technology that is significant for future environmentally sensitive applications. [ABSTRACT FROM AUTHOR]

Perfluoroalkyl substances (PFASs) and fluorinated polymers (FPs) have been extensively utilized in various industries, whereas their extremely high stability poses environmental persistence and difficulty in waste treatment. Current decomposition approaches of PFASs and FPs typically require harsh conditions such as heating over 400 °C. Thus, there is a pressing need to develop a new technique capable of decomposing them under mild conditions. Here, we demonstrated that perfluorooctanesulfonate (PFOS), known as a "persistent chemical," and Nafion, a widely utilized sulfonated FP for ion‐exchange membranes, can be efficiently decomposed into fluorine ions under ambient conditions via the irradiation of visible LED light onto semiconductor nanocrystals (NCs). PFOS was completely defluorinated within 8‐h irradiation of 405‐nm LED light, and the turnover number of the C−F bond dissociation per NC was 17200. Furthermore, 81 % defluorination of Nafion was achieved for 24‐h light irradiation, demonstrating the efficient photocatalytic properties under visible light. We revealed that this decomposition is driven by cooperative mechanisms involving light‐induced ligand displacements and Auger‐induced electron injections via hydrated electrons and higher excited states. This study not only demonstrates the feasibility of efficiently breaking down various PFASs and FPs under mild conditions but also paves the way for advancing toward a sustainable fluorine‐recycling society. [ABSTRACT FROM AUTHOR]

A method for preparing important building blocks for natural product synthesis has been developed using singlet oxygen generated from 5,10,15,20-tetraphenylporphyrin under blue LED irradiation. Using this method, the allylic oxidation of dicyclopentadiene proceeded smoothly in air atmosphere with an 87% yield. The conditions, using TPP under blue LED irradiation, were expanded to include the oxidation of cyclopentadiene. The approach offers a simple and cost-effective method of synthesizing important building blocks for natural product synthesis. [ABSTRACT FROM AUTHOR]

Malignant (high-grade) gliomas are aggressive intrinsic brain tumors that diffusely infiltrate the brain parenchyma. They comprise of World Health Organization (WHO) grade III and IV gliomas. Ionizing radiation or irradiation (IR) is frequently utilized in the treatment of both primary as well as metastatic brain tumors. On the contrary, macrophages (MΦ) are the most copious infiltrating immune cells of all the different cell types colonizing glioma. MΦ at tumor milieu are referred to as tumor-associated macrophages (TAMΦ). In malignant gliomas milieu, TAMΦ are also polarized into two distinct phenotypes such as M1 TAMΦ or M2 TAMΦ, which are capable of inhibiting or promoting tumor growth, respectively. Cranial-IR such as x- and γ-IR are sufficient to induce the migration of peripherally derived MΦ into the brain parenchyma. The IR facilitate a more immunosuppressive milieu via the stimulation of efferocytosis in TAMΦ, and an upsurge of tumor cell engulfment by TAMΦ exhibited detrimental effect of the anti-tumoral immune response in glioma. The MΦ inside the tumor mass are associated with multiple phenomena that include IR resistance and enrichment of the M2 MΦ after IR is able to facilitate glioblastoma multiforme (GBM) recurrence. Reviews on the role of cranial IR-induced peripheral and brain-engrafting macrophages (BeMΦ) in glioma are lacking. Specifically, most studies on peripheral, intrinsic as well as beMΦ on IR focus on WHO grade III and IV. Thus, this review precisely focuses primary on WHO grade III as well as IV gliomas. [ABSTRACT FROM AUTHOR]

Photocatalytic oxygen reduction reaction (ORR) is an environmentally friendly and cost‐effective approach for H2O2 synthesis. However, the current photosynthesis system suffers from sluggish kinetics, rapid recombination of photoexcited charge carriers, and weak redox potentials, resulting in unsatisfactory solar‐to‐chemical conversion efficiency. Herein, a Z‐scheme heterojunction (UiO/IKCN) is constructed through coupling I−/K+ co‐doped g‐C3N4 (IKCN) with NH2‐UiO‐66, a typical metal‐organic framework material. Under visible light irradiation, the optimal UiO/IKCN exhibits exceptional H2O2 production rates in pure water (13.3 mM g−1 h−1) and in isopropanol solution (72.6 mM g−1 h−1), that is 48.4 times higher than pristine CN in isopropanol (1.5 mM g−1 h−1). A high apparent quantum yield of 10.28% at 420 nm is achieved by UiO/IKCN, surpassing most previously reported values. The dominating role of two‐electron ORR in H2O2 photosynthesis is elucidated in detail. The significantly enhanced photocatalytic activity can be attributed to the facilitated charge separation and Z‐scheme charge transfer, which are unambiguously verified by stable‐state surface photovoltage, transient photoluminescence, femtosecond transient absorption spectroscopy, in‐situ irradiated X‐ray photoelectron spectroscopy, and density functional theory calculations. This study represents the first exploration of H2O2 production using NH2‐UiO‐66 and provides insights into the rational design of Z‐scheme heterojunction for highly efficient photosynthesis. [ABSTRACT FROM AUTHOR]

Developing novel and environmentally friendly green methodologies are critical in synthetic organic chemistry. Here, we investigated the one‐pot, efficient green synthesis of pyrazolo[3,4‐b]pyridine derivatives via a multicomponent approach. The reactions were operated in an aqueous medium by using microwave irradiation and conventional protocols. The green protocol offered high yields of desired product in swift reaction time, and good tolerance under reaction conditions. [ABSTRACT FROM AUTHOR]

A novel TiO2/g‐C3N4/CuFe2O4 nanocomposite is synthesized via a wet impregnation process and has been evaluated for photocatalytic degradation of organic pollutants such as Amoxicillin (Antibiotic), Chlorpyrifos (Pesticide), and Methylene blue (Dye) under dark and visible light conditions in water. The synthesis and its photocatalytic characterization of nanocomposite are analyzed using XRD, FT‐IR, HR‐SEM, TEM, EDS, XPS, UV‐Vis, DRS, PL, BET, EIS, VSM, and ESR analysis. Among the various organic pollutants analyzed using TiO2/g‐C3N4/CuFe2O4 to serve as a photocatalyst, the degradation of MB pollutant was significantly greater (99.5 %, k=0.0533 min−1) in comparison to the degradation of the AMX (97.6 %, k=0.0346 min−1) and CPF (97.3 %, k=0.0340 min−1) during visible light irradiation for a period of 90 minutes. The recyclability is validated over three cycles, displayed its stability with 76 % degradation of pollutants and the photocatalyst is also easily separated using a simple magnet for further recycling study. As observed in the results of ESR, the formation of O2 significantly accelerated the superoxide radical generation during the photocatalytic degradation of pollutants, enhancing degradation efficiency. It is worth highlighting that the remarkable degradation efficacy, stability and reusability exhibited by the synthesised nanocomposite prove advantageous for subsequent applications. [ABSTRACT FROM AUTHOR]