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In this work, SbxSy thin films were grown on glass substrates for the first time using the chemical molecular beam deposition method in the atmospheric pressure hydrogen flow. The structural, morphological and optical properties of SbxSy thin films grown at different substrate temperatures of 300 °C, 350 °C, 400 °C and 450 °C were studied. XRD results showed that the SbxSy thin films grown at different substrate temperatures have an orthorhombic crystal structure. Phase analysis indicated a weakening of Sb-S bonds with increasing substrate temperature. Also, the grain sizes of all obtained thin films ranged from 0.5 to 3 µm. The increase in temperature caused the grains to grow and the spaces between them to increase. Optical experiments reveal that as the substrate temperature increases, the optical band gap energy of the films increases from 1.52 eV to 1.73 eV, as well as an increase in the Urbach energy from 0.11 eV to 0.44 eV. The experimental values of the band gap for Sb2S3 films are near the optimum value for photovoltaic conversion. [ABSTRACT FROM AUTHOR]

In this work, we analyzed the temperature dependence of the current-voltage characteristics of the structure of glass/Mo/p-Sb2Se3/n-CdS/In. From an analysis of the temperature dependences of the direct branches of the I-V characteristic of the heterojunction, it was established that the dominant mechanism of current transfer at low biases (3kT/e2Se3/CdS interface. At V>0.8 V, the dominant current transfer mechanism is Newman tunneling. In the case of reverse bias (3kT/e

SbxSey films were obtained by chemical molecular beam deposition (CMBD) on soda-lime glass substrates. Sb and Se were used as sources, their evaporation temperature was 950–1000°C (Sb) and 500°C (Se), the substrate temperature was maintained at about 500°C. Using scanning electron microscopy, X-ray diffraction analysis, and Raman scattering, the effect of the Sb/Se composition ratio on the structure of the synthesized films was studied. It was revealed that the films have a crystalline (orthorhombic) structure with compactly located crystallites having the form of rods with an average size: l = 4–8 µm (length) and d = 2–3 µm (diameter). [ABSTRACT FROM AUTHOR]

Using the thermal evaporation method, thin crystalline films of Sb2(SxSe1-x)3 are produced at the substrate temperature of 300°C. The mixed powders of the Sb2S3 and Sb2Se3 is used as a source material. The influence of the S/Se component ratio on the morphology and structural characteristics of Sb2(SxSe1-x)3 thin films is investigated. As demonstrated by the results of X-ray energy dispersive spectroscopy, the formed films of Sb2(SxSe1-x)3 have a components ratio close to the stoichiometry. Besides, Morphological and structural analyses reveal significant differences in the surface morphology of Sb2(SxSe1-x)3 thin film absorbers, indicating that the properties of the films vary as a function of the S/Se composition ratio. [ABSTRACT FROM AUTHOR]