240 results on '"Ishikawa, Fumitaro"'
Search Results
2. High-Performance Multiwavelength GaNAs Single Nanowire Lasers
3. Perturbation analysis on large band gap bowing of dilute nitride semiconductors
4. Reduced Hamiltonian for Electronic States of Dilute Nitride Semiconductors
5. Efficient low-power photon upconversion in core/shell heterostructured semiconductor nanowires
6. Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures
7. Enhancing Efficiency of Second-Harmonic Generation in III-V Nanowires via Lattice Engineering
8. GaAs/GaInNAs core-multishell nanowires with a triple quantum-well structure emitting in the telecommunication range
9. Electronic properties of nano-polycrystalline diamond synthesised by high-pressure and high-temperature technique
10. GaAsBi/GaAs MQWs grown by MBE using a two-substrate-temperature technique
11. Bismuth flux dependence of GaAsBi/GaAs MQWs grown by molecular beam epitaxy using two-substrate-temperature technique
12. Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
13. Strategic Molecular Beam Epitaxial Growth of GaAs/GaAsBi Heterostructures and Nanostructures
14. GaAsBi/GaAs MQWs MBE growth on (411) GaAs substrate
15. Wafer-scale integration of III–V semiconductor nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy
16. Perturbation analysis on large band gap bowing of dilute nitride semiconductors
17. Dilute Bismide Nanowires
18. GaAs/AlGaOx Heterostructured Nanowires
19. Designing Semiconductor Nanowires for Efficient Photon Upconversion via Heterostructure Engineering
20. AlGaOx nanowires obtained by wet oxidation as a visible white phosphor under UV-LED illumination
21. Crystalline quality of GaAs1−x Bi xgrown below 250°C using molecular beam epitaxy
22. Band gap engineering with sub-monolayer nitrogen insertion into InGaAs/GaAs quantum well
23. Molecular beam epitaxial growth of GaAs/GaNAsBi core–multishell nanowires
24. Anomalously Strong Second‐Harmonic Generation in GaAs Nanowires via Crystal‐Structure Engineering
25. Crystalline quality of GaAs1â' x Bi x grown below 250 °C using molecular beam epitaxy.
26. Sn-V centers in diamond activated by ultra high pressure and high temperature treatment
27. AlGaAs/GaAs superlattice photocathode grown by molecular beam epitaxy: correspondence between room temperature photoluminescence and quantum efficiency
28. Effects of growth temperature and thermal annealing on optical quality of GaNAs nanowires emitting in the near-infrared spectral range
29. Low substrate temperature and low As-pressure growth concept for the molecular beam epitaxial growth of [formula omitted] (Ga,In)(N,As) multiple quantum wells
30. AlGaAs/GaAs superlattice grown by molecular beam epitaxy for its application to semiconductor photocathode
31. 2-inch wafer sized GaAs nanowire ensembles on Sigrown by self-assisted molecular beam epitaxy
32. Twin defect-triggered deformations and Bi segregation in GaAs/GaAsBi core–multishell nanowires
33. Dispersing InP Nanocrystals in Nano-polycrystalline Diamond during the Direct Conversion from Graphite
34. Coherent strain evolution at the initial growth stage of AlN on SiC(0001) proved by in situ synchrotron X-ray diffraction
35. Self-assembled nanodisks in coaxial GaAs/GaAsBi/GaAs core–multishell nanowires
36. Deep-ultraviolet near band-edge emissions from nano-polycrystalline diamond
37. Study on ECR dry etching and selective MBE growth of AlGaN/GaN for fabrication of quantum nanostructures on GaN (0 0 0 1) substrates
38. Cathodoluminescence in-depth spectroscopy study of AlGaN/GaN heterostructures
39. Controlling Bi-Provoked Nanostructure Formation in GaAs/GaAsBi Core–Shell Nanowires
40. Growth of GaAs/GaNAs/GaAs Core-Multishell Nanowires Lasing at $1\mu \mathrm{m}$
41. Near-Infrared Lasing at 1 μm from a Dilute-Nitride-Based Multishell Nanowire
42. Pulsed laser irradiation as a process of conductive surface formation on nanopolycrystalline diamond
43. Depth-resolved cathodoluminescence characterization of buried InGaP/GaAs heterointerfaces
44. Outermost AlGaOx native oxide as a protection layer for GaAs/AlGaAs core-multishell nanowires.
45. Deep-ultraviolet near band-edge emissions from nano-polycrystalline diamond.
46. Annealing induced atomic rearrangements on (Ga,In) (N,As) probed by hard X-ray photoelectron spectroscopy and X-ray absorption fine structure
47. The Report on Topical Meeting of the Vacuum Society of Japan in September “Frontier of Light ∙ Electron ∙ Plasma developed from Vacuum Technology” and Introductory Course “Basic and Applications of Vacuum Technology”
48. Nitrogen δ-doping for band engineering of GaAs-related quantum structures.
49. The optical gain and radiative current density of GaInNAs/GaAs/AlGaAs separate confinement heterostructure quantum well lasers.
50. Impact of carrier localization on the photoluminescence characteristics of (Ga,In)(N,As) and (Ga,In)(N,As,Sb) quantum wells.
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.