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12 results on '"Isik Goktas, Nebile"'

2. Detection of Be dopant pairing in VLS grown GaAs nanowires with twinning superlattices

Author

Mead, Christopher, Huang, Chunyi, Isik Goktas, Nebile, Fiordaliso, Elisabetta Maria, LaPierre, Ray R., Lauhon, Lincoln J., Mead, Christopher, Huang, Chunyi, Isik Goktas, Nebile, Fiordaliso, Elisabetta Maria, LaPierre, Ray R., and Lauhon, Lincoln J.

Abstract

Control over the distribution of dopants in nanowires is essential for regulating their electronic properties, but perturbations in nanowire microstructure may affect doping. Conversely, dopants may be used to control nanowire microstructure including the generation of twinning superlattices (TSLs)—periodic arrays of twin planes. Here the spatial distribution of Be dopants in a GaAs nanowire with a TSL is investigated using atom probe tomography. Homogeneous dopant distributions in both the radial and axial directions are observed, indicating a decoupling of the dopant distribution from the nanowire microstructure. Although the dopant distribution is microscopically homogenous, radial distribution function analysis discovered that 1% of the Be atoms occur in substitutional-interstitial pairs. The pairing confirms theoretical predictions based on the low defect formation energy. These findings indicate that using dopants to engineer microstructure does not necessarily imply that the dopant distribution is non-uniform.

Published
2023

3. Selective Area Growth of GaAs Nanowires and Microplatelet Arrays on Silicon by Hydride Vapor-Phase Epitaxy

Author

Zeghouane, Mohammed, primary, Grégoire, Gabin, additional, Chereau, Emmanuel, additional, Avit, Geoffrey, additional, Staudinger, Philipp, additional, Moselund, Kirsten E., additional, Schmid, Heinz, additional, Coulon, Pierre-Marie, additional, Shields, Philip, additional, Isik Goktas, Nebile, additional, LaPierre, Ray R., additional, Trassoudaine, Agnès, additional, André, Yamina, additional, and Gil, Evelyne, additional

Published
2023
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5. Optical and structural analysis of ultra-long GaAs nanowires after nitrogen-plasma passivation

Author

André, Yamina, primary, Isik Goktas, Nebile, additional, Monier, Guillaume, additional, Hijazi, Hadi, additional, Mehdi, Hussein, additional, Bougerol, Catherine, additional, Bideux, Luc, additional, Trassoudaine, Agnès, additional, Paget, Daniel, additional, Leymarie, Joël, additional, Gil, Evelyne, additional, Robert-Goumet, Christine, additional, and LaPierre, Ray R, additional

Published
2020
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7. (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

Author

Landesman, Jean-Pierre, primary, Isik Goktas, Nebile, additional, LaPierre, Ray R, additional, Ghanad-Tavakoli, Shahram, additional, Pargon, Erwine, additional, Petit-Etienne, Camille, additional, Levallois, Christophe, additional, Jiménez, Juan, additional, and Dadgostar, Shabnam, additional

Published
2020
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9. Effect of the plasma etching on InAsP/InP quantum well structures measured through low temperature micro-photoluminescence intensity scanning

Author

Isik Goktas, Nebile, Landesman, Jean-Pierre, Lapierre, Ray, Ghanad-Tavakoli, Shahram, Pargon, Erwine, Levallois, Christophe, McMaster University [Hamilton, Ontario], Institut de Physique de Rennes (IPR), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Centre National de la Recherche Scientifique (CNRS), Laboratoire des technologies de la microélectronique (LTM ), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut des Fonctions Optiques pour les Technologies de l'informatiON (Institut FOTON), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)-IMT Atlantique Bretagne-Pays de la Loire (IMT Atlantique), Institut Mines-Télécom [Paris] (IMT)-Institut Mines-Télécom [Paris] (IMT), Université de Rennes (UR)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), and Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-École Nationale Supérieure des Sciences Appliquées et de Technologie (ENSSAT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics], [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2019

10. Si Doping of Vapor–Liquid–Solid GaAs Nanowires: n-Type or p-Type?

Author

Hijazi, Hadi, primary, Monier, Guillaume, additional, Gil, Evelyne, additional, Trassoudaine, Agnès, additional, Bougerol, Catherine, additional, Leroux, Christine, additional, Castellucci, Dominique, additional, Robert-Goumet, Christine, additional, Hoggan, Philip E., additional, André, Yamina, additional, Isik Goktas, Nebile, additional, LaPierre, Ray R., additional, and Dubrovskii, Vladimir G., additional

Published
2019
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12. (Invited) Effect of the Plasma Etching on InAsP/InP Quantum Well Structures Measured through Low Temperature Micro-Photoluminescence and Cathodoluminescence

Author

Landesman, Jean-Pierre, Isik Goktas, Nebile, LaPierre, Ray R, Ghanad-Tavakoli, Shahram, Pargon, Erwine, Petit-Etienne, Camille, Levallois, Christophe, Jiménez, Juan, and Dadgostar, Shabnam

Abstract

Photoluminescence and cathodoluminescence spectral imaging were performed across rectangular stripes etched in samples with InAsxP1-xquantum wells of constant thickness and variable composition grown on InP. In particular, the effects of different etching chemistries (CH4/H2/Ar and Cl2/CH4/Ar) were investigated. The results discussed deal with modifications of the luminescence line shapes (which differ with etching process) and with the intensity variation of the emissions associated with the quantum wells across the stripes. The possible origins of these effects are investigated in terms of carrier recombination on the vertical sidewalls of the stripes and lateral diffusion of species from the plasma during etching. Cathodoluminescence measurements on samples under DC-bias also show the quantum confined Stark effect which is correlated to the material modifications induced by the etching.

Published
2020
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