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Mixed amorphous films are of interest as electronic materials and materials based on silicon monoxide are under substantial investigation. Comparisons are made between SiO/GeO[sub 2] and SiO/SnO[sub 2] films. In general the electrical properties of the two series are similar but the optical properties demonstrate significant differences. The effect of SnO[sub 2] addition has a greater effect on paramagnetic resonance than adding GeO[sub 2]. [ABSTRACT FROM AUTHOR]

AC electrical properties of unannealed and annealed amorphous SiO/SnO[sub 2] thin films having different compositions and thicknesses and prepared by vacuum evaporation at 2 × 10[sup -6] torr are investigated. Measurements were taken over the frequency range 200 Hz-1 MHz. The density of localized states (N) before and after annealing for different compositions have been calculated. A decrease in N after annealing accounts for the behaviour of electrical characteristics and indicates the occurrence of some structural changes of the thin films. [ABSTRACT FROM AUTHOR]

Measurements were carried out on the AC electrical properties of vacuum-evaporated SiO/SnO[sub 2] films having different compositions at temperatures between 173 K and 413 K and over the frequency range 200 Hz-1 MHz. The measured conductivity shows a frequency dependence σ [sub AC] χ ω[sup s] with s having different values for higher and lower temperatures. AC conductivity at higher frequencies may be due to electronic hopping. The Elliott (1977) model satisfactorily explains the frequency dependence of conductivity and the temperature dependence of s. The value of the dielectric constant remains unchanged at high frequencies irrespective of temperature change, whereas its value increases at higher temperature with the decrease in frequency. Although the capacitance of the sample shows an increase in value with the increase in temperature within the lower frequency range (10³10[sup 5] Hz), its value remains fairly constant at low temperatures within the measured frequency range. Tan δ, the dielectric loss has been found to increase with increase in temperature and decrease in frequency. [ABSTRACT FROM AUTHOR]