10,446 results on '"Itoh, K."'
Search Results
2. Search for $\alpha$ condensed states in $^{13}$C using $\alpha$ inelastic scattering
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Inaba, K., Sasamoto, Y., Kawabata, T., Fujiwara, M., Funaki, Y., Hatanaka, K., Itoh, K., Itoh, M., Kawase, K., Matsubara, H., Maeda, Y., Suda, K., Sakaguchi, S., Shimizu, Y., Tamii, A., Tameshige, Y., Uchida, M., Uesaka, T., Yamada, T., and Yoshida, H. P.
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Nuclear Experiment ,Nuclear Theory - Abstract
We searched for the $\alpha$ condensed state in $^{13}$C by measuring the $\alpha$ inelastic scattering at $E_{\alpha} = 388$ MeV at forward angles including 0 degrees. We performed the distorted-wave Born-approximation calculation with the single-folding potential and the multipole decomposition analysis to determine the isoscalar transition strengths in $^{13}$C. We found a bump structure around $E_x = 12.5$ MeV due to the isoscalar monopole ($IS0$) transition. A peak-fit analysis suggested that this bump consisted of several $1/2^-$ states. We propose that this bump is due to the mirror state of the 13.5 MeV-state in $^{13}$N, which dominantly decays to the $\alpha$ condensed state in $^{12}$C. It was speculated that the $1/2^-$ states around $E_x = 12.5$ MeV were candidates for the $\alpha$ condensed state, but the $3\alpha + n$ orthogonality condition model suggests that the $\alpha$ condensed state is unlikely to emerge as the negative parity states. We also found two $1/2^+$ or $3/2^+$ states at $E_x = 14.5$ and 16.1 MeV excited with the isoscalar dipole ($IS1$) strengths. We suggest that the 16.1-MeV state is a possible candidate for the $\alpha$ condensed state predicted by the cluster-model calculations on the basis of the good correspondence between the experimental and calculated level structures. However, the theoretical $IS1$ transition strength for this state is significantly smaller than the measured value. Further experimental information is strongly desired to establish the $\alpha$ condensed state in $^{13}$C., Comment: 24 pages, 12 figures, published in PTEP
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- 2021
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3. Fast Bayesian tomography of a two-qubit gate set in silicon
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Evans, T. J., Huang, W., Yoneda, J., Harper, R., Tanttu, T., Chan, K. W., Hudson, F. E., Itoh, K. M., Saraiva, A., Yang, C. H., Dzurak, A. S., and Bartlett, S. D.
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Quantum Physics - Abstract
Benchmarking and characterising quantum states and logic gates is essential in the development of devices for quantum computing. We introduce a Bayesian approach to self-consistent process tomography, called fast Bayesian tomography (FBT), and experimentally demonstrate its performance in characterising a two-qubit gate set on a silicon-based spin qubit device. FBT is built on an adaptive self-consistent linearisation that is robust to model approximation errors. Our method offers several advantages over other self-consistent tomographic methods. Most notably, FBT can leverage prior information from randomised benchmarking (or other characterisation measurements), and can be performed in real time, providing continuously updated estimates of full process matrices while data is acquired., Comment: 10 pages + 6 page appendix, 6 figures, comments welcome
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- 2021
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4. Electrical control of the $g$-tensor of a single hole in a silicon MOS quantum dot
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Liles, S. D., Martins, F., Miserev, D. S., Kiselev, A. A., Thorvaldson, I. D., Rendell, M. J., Jin, I. K., Hudson, F. E., Veldhorst, M., Itoh, K. M., Sushkov, O. P., Ladd, T. D., Dzurak, A. S., and Hamilton, A. R.
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Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Single holes confined in semiconductor quantum dots are a promising platform for spin qubit technology, due to the electrical tunability of the $g$-factor of holes. However, the underlying mechanisms that enable electric spin control remain unclear due to the complexity of hole spin states. Here, we study the underlying hole spin physics of the first hole in a silicon planar MOS quantum dot. We show that non-uniform electrode-induced strain produces nanometre-scale variations in the HH-LH splitting. Importantly, we find that this \RR{non-uniform strain causes} the HH-LH splitting to vary by up to 50\% across the active region of the quantum dot. We show that local electric fields can be used to displace the hole relative to the non-uniform strain profile, allowing a new mechanism for electric modulation of the hole g-tensor. Using this mechanism we demonstrate tuning of the hole $g$-factor by up to 500\%. In addition, we observe a \RR{potential} sweet spot where d$g_{(1\overline{1}0)}$/d$V$ = 0, offering a configuration to suppress spin decoherence caused by electrical noise. These results open a path towards a previously unexplored technology: engineering of \RR{non-uniform} strains to optimise spin-based devices., Comment: 12 pages, 4 figures
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- 2020
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5. Coherent spin qubit transport in silicon
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Yoneda, J., Huang, W., Feng, M., Yang, C. H., Chan, K. W., Tanttu, T., Gilbert, W., Leon, R. C. C., Hudson, F. E., Itoh, K. M., Morello, A., Bartlett, S. D., Laucht, A., Saraiva, A., and Dzurak, A. S.
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Condensed Matter - Mesoscale and Nanoscale Physics ,Quantum Physics - Abstract
A fault-tolerant quantum processor may be configured using stationary qubits interacting only with their nearest neighbours, but at the cost of significant overheads in physical qubits per logical qubit. Such overheads could be reduced by coherently transporting qubits across the chip, allowing connectivity beyond immediate neighbours. Here we demonstrate high-fidelity coherent transport of an electron spin qubit between quantum dots in isotopically-enriched silicon. We observe qubit precession in the inter-site tunnelling regime and assess the impact of qubit transport using Ramsey interferometry and quantum state tomography techniques. We report a polarization transfer fidelity of 99.97% and an average coherent transfer fidelity of 99.4%. Our results provide key elements for high-fidelity, on-chip quantum information distribution, as long envisaged, reinforcing the scaling prospects of silicon-based spin qubits.
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- 2020
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6. Structural Alternation Correlated to the Conductivity Enhancement of PEDOT:PSS Films by Secondary Doping
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Itoh, K., Kato, Y., Honma, Y., Masunaga, H., Fujiwara, A., Iguchi, S., and Sasaki, T.
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Condensed Matter - Materials Science - Abstract
"Secondary doping" in poly(3,4-ethylenedioxy-thiophene):poly(styrenesulfonate) (PEDOT:PSS) is quite effective and a frequently used method for the conductivity enhancement. This simple approach, the addition of co-solvents to the PEDOT:PSS solution before film fabrication, is an essential way to derive the high electrical performance of PEDOT:PSS, but the mechanism still remains unclear. In this study, nanoscale structural changes synchronized with the conductivity enhancement via secondary doping in PEDOT:PSS films were investigated. During secondary doping with ethylene glycol near the critical dopant concentration, non-crystalized PEDOT molecules uncoupled from PSS chains and then underwent nano-crystallization. These structural changes might be the key driving force for conductivity enhancement via secondary doping., Comment: 9 pages, 7 figures, accepted for publication in J. Phys. Chem. C
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- 2019
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7. Deuterium occupation of interatomic hole sites in Ni67Zr33 amorphous alloy
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Itoh, K., Saida, J., Barney, E.R., and Hannon, A.C.
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- 2023
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8. Silicon quantum processor unit cell operation above one Kelvin
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Yang, C. H., Leon, R. C. C., Hwang, J. C. C., Saraiva, A., Tanttu, T., Huang, W., Lemyre, J. Camirand, Chan, K. W., Tan, K. Y., Hudson, F. E., Itoh, K. M., Morello, A., Pioro-Ladrière, M., Laucht, A., and Dzurak, A. S.
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Condensed Matter - Mesoscale and Nanoscale Physics ,Quantum Physics - Abstract
Quantum computers are expected to outperform conventional computers for a range of important problems, from molecular simulation to search algorithms, once they can be scaled up to large numbers of quantum bits (qubits), typically millions. For most solid-state qubit technologies, e.g. those using superconducting circuits or semiconductor spins, scaling poses a significant challenge as every additional qubit increases the heat generated, while the cooling power of dilution refrigerators is severely limited at their operating temperature below 100 mK. Here we demonstrate operation of a scalable silicon quantum processor unit cell, comprising two qubits confined to quantum dots (QDs) at $\sim$1.5 Kelvin. We achieve this by isolating the QDs from the electron reservoir, initialising and reading the qubits solely via tunnelling of electrons between the two QDs. We coherently control the qubits using electrically-driven spin resonance (EDSR) in isotopically enriched silicon $^{28}$Si, attaining single-qubit gate fidelities of 98.6% and coherence time $T_2^*$ = 2$\mu$s during `hot' operation, comparable to those of spin qubits in natural silicon at millikelvin temperatures. Furthermore, we show that the unit cell can be operated at magnetic fields as low as 0.1 T, corresponding to a qubit control frequency of 3.5 GHz, where the qubit energy is well below the thermal energy. The unit cell constitutes the core building block of a full-scale silicon quantum computer, and satisfies layout constraints required by error correction architectures. Our work indicates that a spin-based quantum computer could be operated at elevated temperatures in a simple pumped $^4$He system, offering orders of magnitude higher cooling power than dilution refrigerators, potentially enabling classical control electronics to be integrated with the qubit array.
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- 2019
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9. Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot
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Leon, R. C. C., Yang, C. H., Hwang, J. C. C., Lemyre, J. Camirand, Tanttu, T., Huang, W., Chan, K. W., Tan, K. Y., Hudson, F. E., Itoh, K. M., Morello, A., Laucht, A., Pioro-Ladriere, M., Saraiva, A., and Dzurak, A. S.
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Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Once the periodic properties of elements were unveiled, chemical bonds could be understood in terms of the valence of atoms. Ideally, this rationale would extend to quantum dots, often termed artificial atoms, and quantum computation could be performed by merely controlling the outer-shell electrons of dot-based qubits. Imperfections in the semiconductor material, including at the atomic scale, disrupt this analogy between atoms and quantum dots, so that real devices seldom display such a systematic many-electron arrangement. We demonstrate here an electrostatically-defined quantum dot that is robust to disorder, revealing a well defined shell structure. We observe four shells (31 electrons) with multiplicities given by spin and valley degrees of freedom. We explore various fillings consisting of a single valence electron -- namely 1, 5, 13 and 25 electrons -- as potential qubits, and we identify fillings that yield a total spin-1 on the dot. An integrated micromagnet allows us to perform electrically-driven spin resonance (EDSR). Higher shell states are shown to be more susceptible to the driving field, leading to faster Rabi rotations of the qubit. We investigate the impact of orbital excitations of the p- and d-shell electrons on single qubits as a function of the dot deformation. This allows us to tune the dot excitation spectrum and exploit it for faster qubit control. Furthermore, hotspots arising from this tunable energy level structure provide a pathway towards fast spin initialisation. The observation of spin-1 states may be exploited in the future to study symmetry-protected topological states in antiferromagnetic spin chains and their application to quantum computing.
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- 2019
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10. Single-spin qubits in isotopically enriched silicon at low magnetic field
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Zhao, R., Tanttu, T., Tan, K. Y., Hensen, B., Chan, K. W., Hwang, J. C. C., Leon, R. C. C., Yang, C. H., Gilbert, W., Hudson, F. E., Itoh, K. M., Kiselev, A. A., Ladd, T. D., Morello, A., Laucht, A., and Dzurak, A. S.
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Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Single-electron spin qubits employ magnetic fields on the order of 1 Tesla or above to enable quantum state readout via spin-dependent-tunnelling. This requires demanding microwave engineering for coherent spin resonance control and significant on-chip real estate for electron reservoirs, both of which limit the prospects for large scale multi-qubit systems. Alternatively, singlet-triplet (ST) readout enables high-fidelity spin-state measurements in much lower magnetic fields, without the need for reservoirs. Here, we demonstrate low-field operation of metal-oxide-silicon (MOS) quantum dot qubits by combining coherent single-spin control with high-fidelity, single-shot, Pauli-spin-blockade-based ST readout. We discover that the qubits decohere faster at low magnetic fields with $T_{2}^{Rabi}=18.6$~$\mu$s and $T_2^*=1.4$~$\mu$s at 150~mT. Their coherence is limited by spin flips of residual $^{29}$Si nuclei in the isotopically enriched $^{28}$Si host material, which occur more frequently at lower fields. Our finding indicates that new trade-offs will be required to ensure the frequency stabilization of spin qubits and highlights the importance of isotopic enrichment of device substrates for the realization of a scalable silicon-based quantum processor.
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- 2018
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11. Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift
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Takeda, K., Yoneda, J., Otsuka, T., Nakajima, T., Delbecq, M. R., Allison, G., Hoshi, Y., Usami, N., Itoh, K. M., Oda, S., Kodera, T., and Tarucha, S.
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Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of Si/SiGe spin qubits can be limited by the microwave-induced frequency shift of electric dipole spin resonance and it can be improved by optimization of control pulses. As we increase the control microwave amplitude, we observe a shift of the qubit resonance frequency, in addition to the increasing Rabi frequency. We reveal that this limits control fidelity with a conventional amplitude-modulated microwave pulse below 99.8%. In order to achieve a gate fidelity > 99.9%, we introduce a quadrature control method, and validate this approach experimentally by randomized benchmarking. Our finding facilitates realization of an ultra-high fidelity qubit with electron spins in quantum dots.
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- 2018
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12. Overview of HL-2A recent experiments
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Xu, M, Duan, XR, Liu, Yi, Song, XM, Liu, DQ, Wang, YQ, Lu, B, Yang, QW, Zheng, GY, Ding, XT, Dong, JQ, Hao, GZ, Zhong, WL, Shi, ZB, Yan, LW, Zou, XL, Liu, YQ, Chen, W, Xiao, GL, Zhang, YP, Jiang, M, Hou, YM, Cheng, J, Liang, AS, Bai, XY, Cao, JY, Cao, Z, Chen, HT, Cui, CH, Cui, ZY, Delpech, L, Diamond, PH, Ekedahl, A, Feng, BB, Giruzzi, G, Gong, SB, He, HM, Hoang, T, Huang, M, Huang, Y, Ida, K, Inagaki, S, Isobe, M, Itoh, K, Itoh, S-I, Ji, XQ, Ke, R, Kobayashi, M, Lei, GJ, Li, B, Li, GS, Li, HJ, Li, JQ, Li, Q, Li, Qing, Li, XD, Li, YG, Li, Yongge, Mao, WC, Mazon, D, Mckee, GR, Morita, S, Nie, L, Peng, JF, Peysson, Y, Rao, J, Ren, Y, Tynan, GR, Wang, HX, Wang, QM, Wei, HL, Xia, F, Xiao, XP, Xuan, WM, Yan, Z, Yao, K, Yu, LM, Yu, Y, Yu, DL, Yuan, BD, Yuan, BS, Zhang, JH, Zhou, Y, and Liu, Yong
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magnetic fusion ,overview ,HL-2A tokamak ,Atomic ,Molecular ,Nuclear ,Particle and Plasma Physics ,Fluids & Plasmas - Abstract
The mission of HL-2A is to explore the key physical topics relevant to ITER and to the advanced tokamak operation (e.g. the operation of future HL-2M), such as the access of H-mode, energetic particle physics, edge-localized mode (ELM) mitigation/suppression and disruption mitigation. Since the 2016 Fusion Energy Conference, the HL-2A team has focused on the investigations on the following areas: (i) pedestal dynamics and L-H transition, (ii) techniques of ELM control, (iii) turbulence and transport, (iv) energetic particle physics. The HL-2A results demonstrated that the increase of mean shear flow plays a key role in triggering L-I and I-H transitions, while the change of flow is mainly induced by the ion pressure gradient. Both mitigation and suppression of ELMs were realized by laser blow-off seeded impurity (Al, Fe, W). The 30% Ne mixture supersonic molecular beam injection seeding also robustly induced ELM mitigation. The ELMs were mitigated by low-hybrid current drive. The stabilization of m/n = 1/1 ion fishbone activities by electron cyclotron resonance heating was found on the HL-2A. A new m/n = 2/1 ion fishbone activity was observed recently, and the modelling indicated that passing fast ions dominantly contribute to the driving of 2/1 fishbone. The non-linear coupling between the toroidal Alfven eigenmode and tearing mode (TM) led to the generation of a high frequency mode with the toroidal mode number n = 0. The turbulence was modulated by TM when the island width exceeds a threshold and the modulation is localized merely in the inner area of the islands. Meanwhile, turbulence radial spread took place across the island region.
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- 2019
13. Non-linear charge oscillation driven by a single-cycle light-field in an organic superconductor
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Kawakami, Y., Amano, T., Yoneyama, Y., Akamine, Y., Itoh, H., Kawaguchi, G., Yamamoto, H., Kishida, H., Itoh, K., Sasaki, T., Ishihara, S., Tanaka, Y., Yonemitsu, K., and Iwai, S.
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Condensed Matter - Strongly Correlated Electrons - Abstract
Intense light-field application to solids produces enormous/ultrafast non-linear phenomena such as high-harmonic generations 1, 2 and attosecond charge dynamics 3, 4. They are distinct from conventional photonics. However, main targets have been limited to insulators and semiconductors, although theoretical approaches have been made also for correlated metals and superconductors 5. Here, in a layered organic superconductor, a non-linear charge oscillation driven by a nearly single-cycle strong electric field of >10 megavolts /cm is observed as a stimulated emission. The charge oscillation is different from a linear response and ascribed to a polar charge oscillation with a period of 6 fs. This non-linear polar charge oscillation is enhanced by critical fluctuations near a superconducting transition temperature and a critical end point of first order Mott transitions. Its observation on an ultrafast timescale of 10 fs clarifies that the Coulomb repulsion plays an essential role in superconductivity of organic superconductors., Comment: 5 Figs. for main text, 3 Figs for supplementary information
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- 2018
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14. Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
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Yang, C. H., Chan, K. W., Harper, R., Huang, W., Evans, T., Hwang, J. C. C., Hensen, B., Laucht, A., Tanttu, T., Hudson, F. E., Flammia, S. T., Itoh, K. M., Morello, A., Bartlett, S. D., and Dzurak, A. S.
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Condensed Matter - Mesoscale and Nanoscale Physics ,Quantum Physics - Abstract
The performance requirements for fault-tolerant quantum computing are very stringent. Qubits must be manipulated, coupled, and measured with error rates well below 1%. For semiconductor implementations, silicon quantum dot spin qubits have demonstrated average single-qubit Clifford gate error rates that approach this threshold, notably with error rates of 0.14% in isotopically enriched $^{28}$Si/SiGe devices. This gate performance, together with high-fidelity two-qubit gates and measurements, is only known to meet the threshold for fault-tolerant quantum computing in some architectures when assuming that the noise is incoherent, and still lower error rates are needed to reduce overhead. Here we experimentally show that pulse engineering techniques, widely used in magnetic resonance, improve average Clifford gate error rates for silicon quantum dot spin qubits to 0.043%,a factor of 3 improvement on previous best results for silicon quantum dot devices. By including tomographically complete measurements in randomised benchmarking, we infer a higher-order feature of the noise called the unitarity, which measures the coherence of noise. This in turn allows us to theoretically predict that average gate error rates as low as 0.026% may be achievable with further pulse improvements. These fidelities are ultimately limited by Markovian noise, which we attribute to charge noise emanating from the silicon device structure itself, or the environment.
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- 2018
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15. Dynamical decoupling of interacting dipolar spin ensembles
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Petersen, Evan S., Tyryshkin, A. M., Itoh, K. M., Ager, Joel W., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H. -J., Thewalt, M. L. W., and Lyon, S. A.
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Condensed Matter - Mesoscale and Nanoscale Physics ,Quantum Physics - Abstract
We demonstrate that CPMG and XYXY decoupling sequences with non-ideal $\pi$ pulses can reduce dipolar interactions between spins of the same species in solids. Our simulations of pulsed electron spin resonance (ESR) experiments show that $\pi$ rotations with small ($<$~10\%) imperfections refocus instantaneous diffusion. Here, the intractable N-body problem of interacting dipoles is approximated by the average evolution of a single spin in a changing mean field. These calculations agree well with experiments and do not require powerful hardware. Our results add to past attempts to explain similar phenomena in solid state nuclear magnetic resonance (NMR). Although the fundamental physics of NMR are similar to ESR, the larger linewidths in ESR and stronger dipolar interactions between electron spins compared to nuclear spins preclude drawing conclusions from NMR studies alone. For bulk spins, we also find that using XYXY results in less inflation of the deduced echo decay times as compared to decays obtained with CPMG., Comment: 10 pages, 5 figures
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- 2018
16. Three-dimensional localization spectroscopy of individual nuclear spins with sub-Angstrom resolution
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Zopes, J., Cujia, K. S., Sasaki, K., Boss, J. M., Itoh, K. M., and Degen, C. L.
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Quantum Physics ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
We report on precise localization spectroscopy experiments of individual 13C nuclear spins near a central electronic sensor spin in a diamond chip. By detecting the nuclear free precession signals in rapidly switchable external magnetic fields, we retrieve the three-dimensional spatial coordinates of the nuclear spins with sub-Angstrom resolution and for distances beyond 10 Angstroms. We further show that the Fermi contact contribution can be constrained by measuring the nuclear g-factor enhancement. The presented method will be useful for mapping the atomic-scale structure of single molecules, an ambitious yet important goal of nanoscale nuclear magnetic resonance spectroscopy.
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- 2018
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17. Fidelity benchmarks for two-qubit gates in silicon
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Huang, W., Yang, C. H., Chan, K. W., Tanttu, T., Hensen, B., Leon, R. C. C., Fogarty, M. A., Hwang, J. C. C., Hudson, F. E., Itoh, K. M., Morello, A., Laucht, A., and Dzurak, A. S.
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Condensed Matter - Mesoscale and Nanoscale Physics ,Quantum Physics - Abstract
Universal quantum computation will require qubit technology based on a scalable platform, together with quantum error correction protocols that place strict limits on the maximum infidelities for one- and two-qubit gate operations. While a variety of qubit systems have shown high fidelities at the one-qubit level, superconductor technologies have been the only solid-state qubits manufactured via standard lithographic techniques which have demonstrated two-qubit fidelities near the fault-tolerant threshold. Silicon-based quantum dot qubits are also amenable to large-scale manufacture and can achieve high single-qubit gate fidelities (exceeding 99.9%) using isotopically enriched silicon. However, while two-qubit gates have been demonstrated in silicon, it has not yet been possible to rigorously assess their fidelities using randomized benchmarking, since this requires sequences of significant numbers of qubit operations ($\gtrsim 20$) to be completed with non-vanishing fidelity. Here, for qubits encoded on the electron spin states of gate-defined quantum dots, we demonstrate Bell state tomography with fidelities ranging from 80% to 89%, and two-qubit randomized benchmarking with an average Clifford gate fidelity of 94.7% and average Controlled-ROT (CROT) fidelity of 98.0%. These fidelities are found to be limited by the relatively slow gate times employed here compared with the decoherence times $T_2^*$ of the qubits. Silicon qubit designs employing fast gate operations based on high Rabi frequencies, together with advanced pulsing techniques, should therefore enable significantly higher fidelities in the near future.
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- 2018
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18. Assessment of a silicon quantum dot spin qubit environment via noise spectroscopy
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Chan, K. W., Huang, W., Yang, C. H., Hwang, J. C. C., Hensen, B., Tanttu, T., Hudson, F. E., Itoh, K. M., Laucht, A., Morello, A., and Dzurak, A. S.
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Quantum Physics - Abstract
Preserving coherence long enough to perform meaningful calculations is one of the major challenges on the pathway to large scale quantum computer implementations. Noise coupled from the environment is the main contributing factor to decoherence but can be mitigated via engineering design and control solutions. However, this is only possible after acquiring a thorough understanding of the dominant noise sources and their spectrum. In this paper, we employ a silicon quantum dot spin qubit as a metrological device to study the noise environment experienced by the qubit. We compare the sensitivity of this qubit to electrical noise with that of an implanted phosphorus donor in silicon qubit in the same environment and measurement set-up. Our results show that, as expected, a quantum dot spin qubit is more sensitive to electrical noise than a donor spin qubit due to the larger Stark shift, and the noise spectroscopy data shows pronounced charge noise contributions at intermediate frequencies (2-20 kHz).
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- 2018
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19. Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
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Fogarty, M. A., Chan, K. W., Hensen, B., Huang, W., Tanttu, T., Yang, C. H., Laucht, A., Veldhorst, M., Hudson, F. E., Itoh, K. M., Culcer, D., Morello, A., and Dzurak, A. S.
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Quantum Physics - Abstract
Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using $^{28}$Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis., Comment: 10 pages, 4 figures
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- 2017
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20. A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
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Yoneda, J., Takeda, K., Otsuka, T., Nakajima, T., Delbecq, M. R., Allison, G., Honda, T., Kodera, T., Oda, S., Hoshi, Y., Usami, N., Itoh, K. M., and Tarucha, S.
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Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation in nanostructures, however, its compatibility with enhanced coherence should be crucially questioned. Here we realise a single-electron spin qubit with isotopically-enriched phase coherence time (20 microseconds) and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge (instead of conventional magnetic) noise featured by a 1/f spectrum over seven decades of frequency. The qubit nevertheless exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average. Our work strongly suggests that designing artificial spin-electric coupling with account taken of charge noise is a promising route to large-scale spin-qubit systems having fault-tolerant controllability.
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- 2017
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21. High resolution quantum sensing with shaped control pulses
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Zopes, J., Sasaki, K., Cujia, K. S., Boss, J. M., Chang, K., Segawa, T. F., Itoh, K. M., and Degen, C. L.
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Quantum Physics - Abstract
We investigate the application of amplitude-shaped control pulses for enhancing the time and frequency resolution of multipulse quantum sensing sequences. Using the electronic spin of a single nitrogen vacancy center in diamond and up to 10,000 coherent microwave pulses with a cosine square envelope, we demonstrate 0.6 ps timing resolution for the interpulse delay. This represents a refinement by over 3 orders of magnitude compared to the 2 ns hardware sampling. We apply the method for the detection of external AC magnetic fields and nuclear magnetic resonance signals of carbon-13 spins with high spectral resolution. Our method is simple to implement and especially useful for quantum applications that require fast phase gates, many control pulses, and high fidelity., Comment: 5 pages, 4 figures, plus supplemental material
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- 2017
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22. Quantum-disordered state of magnetic and electric dipoles in a hydrogen-bonded Mott system
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Shimozawa, M., Hashimoto, K., Ueda, A., Suzuki, Y., Sugii, K., Yamada, S., Imai, Y., Kobayashi, R., Itoh, K., Iguchi, S., Naka, M., Ishihara, S., Mori, H., Sasaki, T., and Yamashita, M.
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Condensed Matter - Strongly Correlated Electrons ,Condensed Matter - Materials Science - Abstract
Strongly enhanced quantum fluctuations often lead to a rich variety of quantum-disordered states. A representative case is liquid helium, in which zero-point vibrations of the helium atoms prevent its solidification at low temperatures. A similar behaviour is found for the internal degrees of freedom in electrons. Among the most prominent is a quantum spin liquid (QSL), in which localized spins are highly correlated but fluctuate even at absolute zero. Recently, a coupling of spins with other degrees of freedom has been proposed as an innovative approach to generate even more fascinating QSLs such as orbital--spin liquids. However, such ideas are limited to the internal degrees of freedom in electrons. Here, we demonstrate that a coupling of localized spins with the zero-point motion of hydrogen atoms (proton fluctuations) in a hydrogen-bonded organic Mott insulator provides a new class of QSLs. We find that a divergent dielectric behaviour towards a hydrogen-bond order is suppressed by the quantum proton fluctuations, resulting in a quantum paraelectric (QPE) state. Furthermore, our thermal-transport measurements reveal that a QSL state with gapless spin excitations rapidly emerges upon entering the QPE state. These findings indicate that the quantum proton fluctuations give rise to a novel QSL --- a quantum-disordered state of magnetic and electric dipoles --- through the coupling between the electron and proton degrees of freedom., Comment: 10 pages, 8 figures
- Published
- 2017
- Full Text
- View/download PDF
23. Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits
- Author
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Muhonen, J. T., Dehollain, J. P., Laucht, A., Simmons, S., Kalra, R., Hudson, F. E., Jamieson, D. N., McCallum, J. C., Itoh, K. M., Dzurak, A. S., and Morello, A.
- Subjects
Quantum Physics ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be used to coherently rotate the spin to a desired pure state. We explicitly demonstrate that phase coherence is preserved throughout multiple sequential single-shot weak measurements, and that the partial state collapse can be reversed. Second, we use the relation between measurement strength and perturbation of the nuclear state as a physical meter to extract the tunneling rates between the $^{31}$P donor and a nearby electron reservoir from data, conditioned on observing no tunneling events. Our experiments open avenues to measurement-based state preparation, steering and feedback protocols for spin systems in the solid state, and highlight the fundamental connection between information gain and state modification in quantum mechanics., Comment: 6 pages main text + 3 pages supplementary
- Published
- 2017
- Full Text
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24. Coherent Rabi dynamics of a superradiant spin ensemble in a microwave cavity
- Author
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Rose, B. C., Tyryshkin, A. M., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H. -J., Thewalt, M. L. W., Itoh, K. M., and Lyon, S. A.
- Subjects
Quantum Physics ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
We achieve the strong coupling regime between an ensemble of phosphorus donor spins in a highly enriched $^{28}$Si crystal and a 3D dielectric resonator. Spins were polarized beyond Boltzmann equilibrium using spin selective optical excitation of the no-phonon bound exciton transition resulting in $N$ = $3.6\cdot10^{13}$ unpaired spins in the ensemble. We observed a normal mode splitting of the spin ensemble-cavity polariton resonances of 2$g\sqrt{N}$ = 580 kHz (where each spin is coupled with strength $g$) in a cavity with a quality factor of 75,000 ($\gamma \ll \kappa \approx$ 60 kHz where $\gamma$ and $\kappa$ are the spin dephasing and cavity loss rates, respectively). The spin ensemble has a long dephasing time (T$_2^*$ = 9 $\mu$s) providing a wide window for viewing the dynamics of the coupled spin ensemble-cavity system. The free induction decay shows up to a dozen collapses and revivals revealing a coherent exchange of excitations between the superradiant state of the spin ensemble and the cavity at the rate $g\sqrt{N}$. The ensemble is found to evolve as a single large pseudospin according to the Tavis-Cummings model due to minimal inhomogeneous broadening and uniform spin-cavity coupling. We demonstrate independent control of the total spin and the initial Z-projection of the psuedospin using optical excitation and microwave manipulation respectively. We vary the microwave excitation power to rotate the pseudospin on the Bloch sphere and observe a long delay in the onset of the superradiant emission as the pseudospin approaches full inversion. This delay is accompanied by an abrupt $\pi$ phase shift in the peusdospin microwave emission. The scaling of this delay with the initial angle and the sudden phase shift are explained by the Tavis-Cummings model., Comment: 9 pages, 7 figures
- Published
- 2017
- Full Text
- View/download PDF
25. Crystallization and vitrification of electrons in a glass-forming charge liquid
- Author
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Sasaki, S., Hashimoto, K., Kobayashi, R., Itoh, K., Iguchi, S., Nishio, Y., Ikemoto, Y., Moriwaki, T., Yoneyama, N., Watanabe, M., Ueda, A., Mori, H., Kobayashi, K., Kumai, R., Murakami, Y., Muller, J., and Sasaki, T.
- Subjects
Condensed Matter - Strongly Correlated Electrons - Abstract
Charge ordering (CO) is a phenomenon in which electrons in solids crystallize into a periodic pattern of charge-rich and charge-poor sites owing to strong electron correlations. This usually results in long-range order. In geometrically frustrated systems, however, a glassy electronic state without long-range CO has been observed. We found that a charge-ordered organic material with an isosceles triangular lattice shows charge dynamics associated with crystallization and vitrification of electrons, which can be understood in the context of an energy landscape arising from the degeneracy of various CO patterns. The dynamics suggest that the same nucleation and growth processes that characterize conventional glass-forming liquids guide the crystallization of electrons. These similarities may provide insight into our understanding of the liquid-glass transition.
- Published
- 2016
- Full Text
- View/download PDF
26. Temporal-spatial structures of plasmas flows and turbulence around tearing mode islands in the edge tokamak plasmas
- Author
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Zhao, KJ, Nagashima, Y, Li, FM, Shi, Yuejiang, Diamond, PH, Dong, JQ, Itoh, K, Itoh, S-I, Zhuang, G, Liu, H, Chen, ZP, Cheng, J, Nie, L, Ding, YH, Hu, QM, Chen, ZY, Rao, B, Cheng, ZF, Gao, L, Zhang, XQ, Yang, ZJ, Wang, NC, Wang, L, Jin, W, Yan, W, Xu, JQ, Wu, YF, Yan, LW, Fujisawa, A, Inagaki, S, Kosuga, Y, and Sasaki, M
- Subjects
tearing mode ,magetic island ,plasma flow ,turbulence ,Atomic ,Molecular ,Nuclear ,Particle and Plasma Physics ,Fluids & Plasmas - Abstract
The temporal-spatial structures of plasma flows and turbulence around tearing mode islands are presented. The experiments were performed using Langmuir probe arrays in the edge plasmas of J-TEXT tokamak. The correlation analyses clearly show that the flows have similar structures of m/n = 3/1 as the magnetic island does (m and n are the poloidal and toroidal mode numbers, respectively). The sign of the potential fluctuations for the flows inverses and the powers significantly reduce at q = 3 surface. Approaching to the last closed flux surface for the magnetic islands, the radially elongated flow structure forms. The flows are concentrated near separatrix and show quadrupole structures. The turbulence is concentrated near X-point and partly trapped inside the magnetic islands.
- Published
- 2017
27. Overview of recent HL-2A experiments
- Author
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Duan, XR, Liu, Yi, Xu, M, Yan, LW, Xu, Y, Song, XM, Dong, JQ, Ding, XT, Chen, LY, Lu, B, Liu, DQ, Rao, J, Xuan, WM, Yang, QW, Zheng, GY, Zou, XL, Liu, YQ, Zhong, WL, Zhao, KJ, Ji, XQ, Mao, WC, Wang, QM, Li, Q, Cao, JY, Cao, Z, Lei, GJ, Zhang, JH, Li, XD, Bai, XY, Cheng, J, Chen, W, Cui, ZY, Delpech, L, Diamond, PH, Dong, YB, Ekedahl, A, Hoang, T, Huang, Y, Ida, K, Itoh, K, Itoh, S-I, Isobe, M, Inagaki, S, Mazon, D, Morita, S, Peysson, Y, Shi, ZB, Wang, XG, Xiao, GL, Yu, DL, Yu, LM, Zhang, YP, Zhou, Y, Cui, CH, Feng, BB, Huang, M, Li, YG, Li, B, Li, GS, Li, HJ, Li, Qing, Peng, JF, Wang, YQ, Yuan, BS, and Liu, Yong
- Subjects
tokamak ,plasma physics ,HL-2A ,Atomic ,Molecular ,Nuclear ,Particle and Plasma Physics ,Fluids & Plasmas - Published
- 2017
28. Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy
- Author
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Kimura, T., primary, Shimazu, H., additional, Kataoka, K., additional, Itoh, K., additional, Narita, T., additional, Uedono, A., additional, Tokuda, Y., additional, Tanaka, D., additional, Nitta, S., additional, Amano, H., additional, and Nakamura, D., additional
- Published
- 2024
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- View/download PDF
29. A single-atom quantum memory in silicon
- Author
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Freer, S., Simmons, S., Laucht, A., Muhonen, J. T., Dehollain, J. P., Kalra, R., Mohiyaddin, F. A., Hudson, F., Itoh, K. M., McCallum, J. C., Jamieson, D. N., Dzurak, A. S., and Morello, A.
- Subjects
Quantum Physics ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses., Comment: 14 pages, 6 figures. v2 has minor cosmetic improvements, and 11 additional references
- Published
- 2016
30. On the wave function renormalization for Wilson actions and their 1PI actions
- Author
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Igarashi, Y., Itoh, K., and Sonoda, H.
- Subjects
High Energy Physics - Theory - Abstract
We clarify the relation between the wave function renormalization for Wilson actions and that for the 1PI actions in the exact renormalization group formalism. Our study depends crucially on the use of two independent cutoff functions for the Wilson actions. We relate our results to those obtained previously by Bervillier, Rosten, and Osborn & Twigg., Comment: 24 pages, no figure
- Published
- 2016
31. Large Stark tuning of donor electron spin quantum bits in germanium
- Author
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Sigillito, A. J., Tyryshkin, A. M., Beeman, J. W., Haller, E. E., Itoh, K. M., and Lyon, S. A.
- Subjects
Quantum Physics ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult to selectively manipulate single donor electron spins. Here, we show that by replacing the prevailing semiconductor host material (silicon) with germanium, donor electron spin qubits can be electrically tuned by more than an ensemble linewidth, making them compatible with gate addressable quantum computing architectures. Using X-band pulsed electron spin resonance, we measured the Stark effect for donor electron spins in germanium. We resolved both spin-orbit and hyperfine Stark shifts and found that at 0.4 T, the spin-orbit Stark shift dominates. The spin-orbit Stark shift is highly anisotropic, depending on the electric field orientation relative to the crystal axes and external magnetic field. When the Stark shift is maximized, the spin-orbit Stark parameter is four orders of magnitude larger than in silicon. At select orientations a hyperfine Stark effect was also resolved and is an order of magnitude larger than in silicon. We report the Stark parameters for $^{75}$As and $^{31}$P donor electrons and compare them to the available theory. Our data reveal that $^{31}$P donors in germanium can be tuned by at least four times the ensemble linewidth making germanium an appealing new host material for spin qubits that offers major advantages over silicon.
- Published
- 2016
- Full Text
- View/download PDF
32. Mesoscale electric fluctuations interacting with zonal flows, magnetic fluctuations and turbulence
- Author
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Zhao, KJ, Nagashima, Y, Diamond, PH, Dong, JQ, Itoh, K, Itoh, S-I, Yan, LW, Cheng, J, Fujisawa, A, Inagaki, S, Kosuga, Y, Sasaki, M, Huang, ZH, Yu, DL, Li, Q, Ji, XQ, Song, XM, Huang, Y, Liu, Yi, Yang, QW, Ding, XT, and Duan, XR
- Subjects
magnetic fluctuations ,turbulence ,zonal flows ,mesoscale electric fluctuations ,nonlinear synchronization ,Atomic ,Molecular ,Nuclear ,Particle and Plasma Physics ,Fluids & Plasmas - Published
- 2017
33. Role of phase space structures in collisionless drift wave turbulence and impact on transport modeling
- Author
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Kosuga, Y, Itoh, S-I, Diamond, PH, Itoh, K, and Lesur, M
- Subjects
drift wave turbulence ,phase space structure ,zonal flow ,transport ,Atomic ,Molecular ,Nuclear ,Particle and Plasma Physics ,Fluids & Plasmas - Published
- 2017
34. How turbulence fronts induce plasma spin-up.
- Author
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Kosuga, Y, Itoh, S-I, Diamond, PH, and Itoh, K
- Abstract
A calculation which describes the spin-up of toroidal plasmas by the radial propagation of turbulence fronts with broken parallel symmetry is presented. The associated flux of parallel momentum is calculated by using a two-scale direct-interaction approximation in the weak turbulence limit. We show that fluctuation momentum spreads faster than mean flow momentum. Specifically, the turbulent flux of wave momentum is stronger than the momentum pinch. The scattering of fluctuation momentum can induce edge-core coupling of toroidal flows, as observed in experiments.
- Published
- 2017
35. A simple model for electron dissipation in trapped ion turbulence
- Author
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Lesur, M, Cartier-Michaud, T, Drouot, T, Diamond, PH, Kosuga, Y, Réveillé, T, Gravier, E, Garbet, X, Itoh, S-I, and Itoh, K
- Subjects
Astronomical and Space Sciences ,Atomic ,Molecular ,Nuclear ,Particle and Plasma Physics ,Classical Physics ,Fluids & Plasmas - Abstract
Trapped ion resonance-driven turbulence is investigated in the presence of electron dissipation in a simplified tokamak geometry. A reduced gyrokinetic bounce-averaged model for trapped ions is adopted. Electron dissipation is modeled by a simple phase-shift δ between density and electric potential perturbations. The linear eigenfunction features a peak at the resonant energy, which becomes stronger with increasing electron dissipation. Accurately resolving this narrow peak in numerical simulation of the initial-value problem yields a stringent lower bound on the number of grid points in the energy space. Further, the radial particle flux is investigated in the presence of electron dissipation, including kinetic effects. When the density gradient is higher than the temperature gradient, and the phase-shift is finite but moderate (δ≈0.02), the particle flux peaks at an order-of-magnitude above the gyro-Bohm estimate. Slight particle pinch is observed for δ
- Published
- 2017
36. Synchronization of Geodesic Acoustic Modes and Magnetic Fluctuations in Toroidal Plasmas
- Author
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Zhao, KJ, Nagashima, Y, Diamond, PH, Dong, JQ, Itoh, K, Itoh, S-I, Yan, LW, Cheng, J, Fujisawa, A, Inagaki, S, Kosuga, Y, Sasaki, M, Wang, ZX, Wei, L, Huang, ZH, Yu, DL, Hong, WY, Li, Q, Ji, XQ, Song, XM, Huang, Y, Liu, Yi, Yang, QW, Ding, XT, and Duan, XR
- Subjects
Mathematical Sciences ,Physical Sciences ,Engineering ,General Physics - Abstract
The synchronization of geodesic acoustic modes (GAMs) and magnetic fluctuations is identified in the edge plasmas of the HL-2A tokamak. Mesoscale electric fluctuations (MSEFs) having components of a dominant GAM, and m/n=6/2 potential fluctuations are found at the same frequency as that of the magnetic fluctuations of m/n=6/2 (m and n are poloidal and toroidal mode numbers, respectively). The temporal evolutions of the MSEFs and the magnetic fluctuations clearly show the frequency entrainment and the phase lock between the GAM and the m/n=6/2 magnetic fluctuations. The results indicate that GAMs and magnetic fluctuations can transfer energy through nonlinear synchronization. Such nonlinear synchronization may also contribute to low-frequency zonal flow formation, reduction of turbulence level, and thus confinement regime transitions.
- Published
- 2016
37. Electron spin coherence of shallow donors in natural and isotopically enriched germanium
- Author
-
Sigillito, A. J., Jock, R. M., Tyryshkin, A. M., Beeman, J. W., Haller, E. E., Itoh, K. M., and Lyon, S. A.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Condensed Matter - Materials Science ,Quantum Physics - Abstract
Germanium is a widely used material for electronic and optoelectronic devices and recently it has become an important material for spintronics and quantum computing applications. Donor spins in silicon have been shown to support very long coherence times ($T_{2}$) when the host material is isotopically enriched to remove any magnetic nuclei. Germanium also has non-magnetic isotopes so it is expected to support long $T_{2}$s while offering some new properties. Compared to Si, Ge has a strong spin-orbit coupling, large electron wavefunction, high mobility, and highly anisotropic conduction band valleys which will all give rise to new physics. In this Letter, the first pulsed electron spin resonance (ESR) measurements of $T_{2}$ and the spin-lattice relaxation ($T_1$) times for $^{75}$As and $^{31}$P donors in natural and isotopically enriched germanium are presented. We compare samples with various levels of isotopic enrichment and find that spectral diffusion due to $^{73}$Ge nuclear spins limits the coherence in samples with significant amounts of $^{73}$Ge. For the most highly enriched samples, we find that $T_1$ limits $T_2$ to $T_2 = 2T_1$. We report an anisotropy in $T_1$ and the ensemble linewidths for magnetic fields oriented along different crystal axes but do not resolve any angular dependence to the spectral-diffusion-limited $T_2$ in samples with $^{73}$Ge.
- Published
- 2015
- Full Text
- View/download PDF
38. Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
- Author
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Mortemousque, P. A., Rosenius, S., Pica, G., Franke, D. P., Sekiguchi, T., Truong, A., Vlasenko, M. P., Vlasenko, L. S., Brandt, M. S., Elliman, R. G., and Itoh, K. M.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Quantum Physics - Abstract
Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center., Comment: 3 figures
- Published
- 2015
- Full Text
- View/download PDF
39. Spin-orbit coupling and operation of multi-valley spin qubits
- Author
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Veldhorst, M., Ruskov, R., Yang, C. H., Hwang, J. C. C., Hudson, F. E., Flatté, M. E., Tahan, C., Itoh, K. M., Morello, A., and Dzurak, A. S.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Spin qubits composed of either one or three electrons are realized in a quantum dot formed at a Si/SiO_2-interface in isotopically enriched silicon. Using pulsed electron spin resonance, we perform coherent control of both types of qubits, addressing them via an electric field dependent g-factor. We perform randomized benchmarking and find that both qubits can be operated with high fidelity. Surprisingly, we find that the g-factors of the one-electron and three-electron qubits have an approximately linear but opposite dependence as a function of the applied dc electric field. We develop a theory to explain this g-factor behavior based on the spin-valley coupling that results from the sharp interface. The outer "shell" electron in the three-electron qubit exists in the higher of the two available conduction-band valley states, in contrast with the one-electron case, where the electron is in the lower valley. We formulate a modified effective mass theory and propose that inter-valley spin-flip tunneling dominates over intra-valley spin-flips in this system, leading to a direct correlation between the spin-orbit coupling parameters and the g-factors in the two valleys. In addition to offering all-electrical tuning for single-qubit gates, the g-factor physics revealed here for one-electron and three-electron qubits offers potential opportunities for new qubit control approaches.
- Published
- 2015
- Full Text
- View/download PDF
40. A Two Qubit Logic Gate in Silicon
- Author
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Veldhorst, M., Yang, C. H., Hwang, J. C. C., Huang, W., Dehollain, J. P., Muhonen, J. T., Simmons, S., Laucht, A., Hudson, F. E., Itoh, K. M., Morello, A., and Dzurak, A. S.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics ,Quantum Physics - Abstract
Quantum computation requires qubits that can be coupled and realized in a scalable manner, together with universal and high-fidelity one- and two-qubit logic gates \cite{DiVincenzo2000, Loss1998}. Strong effort across several fields have led to an impressive array of qubit realizations, including trapped ions \cite{Brown2011}, superconducting circuits \cite{Barends2014}, single photons\cite{Kok2007}, single defects or atoms in diamond \cite{Waldherr2014, Dolde2014} and silicon \cite{Muhonen2014}, and semiconductor quantum dots \cite{Veldhorst2014}, all with single qubit fidelities exceeding the stringent thresholds required for fault-tolerant quantum computing \cite{Fowler2012}. Despite this, high-fidelity two-qubit gates in the solid-state that can be manufactured using standard lithographic techniques have so far been limited to superconducting qubits \cite{Barends2014}, as semiconductor systems have suffered from difficulties in coupling qubits and dephasing \cite{Nowack2011, Brunner2011, Shulman2012}. Here, we show that these issues can be eliminated altogether using single spins in isotopically enriched silicon\cite{Itoh2014} by demonstrating single- and two-qubit operations in a quantum dot system using the exchange interaction, as envisaged in the original Loss-DiVincenzo proposal \cite{Loss1998}. We realize CNOT gates via either controlled rotation (CROT) or controlled phase (CZ) operations combined with single-qubit operations. Direct gate-voltage control provides single-qubit addressability, together with a switchable exchange interaction that is employed in the two-qubit CZ gate. The speed of the two-qubit CZ operations is controlled electrically via the detuning energy and we find that over 100 two-qubit gates can be performed within a two-qubit coherence time of 8 \textmu s, thereby satisfying the criteria required for scalable quantum computation.
- Published
- 2014
- Full Text
- View/download PDF
41. Pulsed Low-Field Electrically Detected Magnetic Resonance
- Author
-
Dreher, L., Hoehne, F., Morishita, H., Huebl, H., Stutzmann, M., Itoh, K. M., and Brandt, M. S.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
We present pulsed electrically detected magnetic resonance (EDMR) measurements at low magnetic fields using posphorus-doped silicon with natural isotope composition as a model system. Our measurements show that pulsed EDMR experiments, well established at X-band frequencies (10 GHz), such as coherent spin rotations, Hahn echoes, and measurements of parallel and antiparallel spin pair life times are also feasible at frequencies in the MHz regime. We find that the Rabi frequency of the coupled 31P electron-nuclear spin system scales with the magnetic field as predicted by the spin Hamiltonian, while the measured spin coherence and recombination times do not strongly depend on the magnetic field in the region investigated. The usefulness of pulsed low-field EDMR for measurements of small hyperfine interactions is demonstrated by electron spin echo envelope modulation measurements of the Pb0 dangling-bond state at the Si/SiO2 interface. A pronounced modulation with a frequency at the free Larmor frequency of hydrogen nuclei was observed for radio frequencies between 38 MHz and 400 MHz, attributed to the nuclear magnetic resonance of hydrogen in an adsorbed layer of water This demonstrates the high sensitivity of low-field EDMR also for spins not directly participating in the spin-dependent transport investigated., Comment: 12 pages, 5 figures
- Published
- 2014
- Full Text
- View/download PDF
42. Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
- Author
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Muhonen, J. T., Laucht, A., Simmons, S., Dehollain, J. P., Kalra, R., Hudson, F. E., Freer, S., Itoh, K. M., Jamieson, D. N., McCallum, J. C., Dzurak, A. S., and Morello, A.
- Subjects
Quantum Physics ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit.
- Published
- 2014
- Full Text
- View/download PDF
43. Centrifuge simulations of wave propagation using a moving load system
- Author
-
Itoh, K., primary, Takahashi, A., additional, Kusakabe, O., additional, Koda, M., additional, Murata, O., additional, and Lee, K.I., additional
- Published
- 2021
- Full Text
- View/download PDF
44. Experimental Study on Hypersonic Pitch-Up Anomaly in Shock Tunnel
- Author
-
Tanno, H., Komuro, T., Sato, K., Itoh, K., Sasoh, Akihiro, editor, Aoki, Toshiyuki, editor, and Katayama, Masahide, editor
- Published
- 2019
- Full Text
- View/download PDF
45. Coherent spin qubit transport in silicon
- Author
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Yoneda, J., Huang, W., Feng, M., Yang, C. H., Chan, K. W., Tanttu, T., Gilbert, W., Leon, R. C. C., Hudson, F. E., Itoh, K. M., Morello, A., Bartlett, S. D., Laucht, A., Saraiva, A., and Dzurak, A. S.
- Published
- 2021
- Full Text
- View/download PDF
46. Structural study of Ni67Zr33 amorphous alloy: Interatomic space analysis approach
- Author
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Itoh, K., Saida, J., and Otomo, T.
- Published
- 2020
- Full Text
- View/download PDF
47. Host isotope mass effects on the hyperfine interaction of group-V donors in silicon
- Author
-
Sekiguchi, T., Tyryshkin, A. M., Tojo, S., Abe, E., Mori, R., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H. -J., Ager, J. W., Haller, E. E., Thewalt, M. L. W., Morton, J. J. L., Lyon, S. A., and Itoh, K. M.
- Subjects
Condensed Matter - Materials Science ,Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
The effects of host isotope mass on the hyperfine interaction of group-V donors in silicon are revealed by pulsed electron nuclear double resonance (ENDOR) spectroscopy of isotopically engineered Si single crystals. Each of the hyperfine-split P-31, As-75, Sb-121, Sb-123, and Bi-209 ENDOR lines splits further into multiple components, whose relative intensities accurately match the statistical likelihood of the nine possible average Si masses in the four nearest-neighbor sites due to random occupation by the three stable isotopes Si-28, Si-29, and Si-30. Further investigation with P-31 donors shows that the resolved ENDOR components shift linearly with the bulk-averaged Si mass., Comment: 5 pages, 4 figures, 1 table
- Published
- 2014
- Full Text
- View/download PDF
48. Inductive measurement of optically hyperpolarized phosphorous donor nuclei in an isotopically-enriched silicon-28 crystal
- Author
-
Gumann, P., Patange, O., Ramanathan, C., Haas, H., Moussa, O., Thewalt, M. L. W., Riemann, H., Abrosimov, N. V., Becker, P., Pohl, H. -J., Itoh, K. M., and Cory, D. G.
- Subjects
Condensed Matter - Materials Science ,Quantum Physics - Abstract
We experimentally demonstrate the inductive readout of optically hyperpolarized phosphorus-31 donor nuclear spins in an isotopically enriched silicon-28 crystal. The concentration of phosphorus donors in the crystal was 1.5 x 10$^{15}$ cm$^{-3}$, three orders of magnitude lower than has previously been detected via direct inductive detection. The signal-to-noise ratio measured in a single free induction decay from a 1 cm$^3$ sample ($\approx 10^{15}$ spins) was 113. By transferring the sample to an X-band ESR spectrometer, we were able to obtain a lower bound for the nuclear spin polarization at 1.7 K of 64 %. The $^{31}$P-T$_{2}$ measured with a Hahn echo sequence was 420 ms at 1.7 K, which was extended to 1.2 s with a Carr Purcell cycle. The T$_1$ of the $^{31}$P nuclear spins at 1.7 K is extremely long and could not be determined, as no decay was observed even on a timescale of 4.5 hours. Optical excitation was performed with a 1047 nm laser, which provided above bandgap excitation of the silicon. The build-up of the hyperpolarization at 4.2 K followed a single exponential with a characteristic time of 577 s, while the build-up at 1.7 K showed bi-exponential behavior with characteristic time constants of 578 s and 5670 s., Comment: 8 pages, 6 figures
- Published
- 2014
- Full Text
- View/download PDF
49. An addressable quantum dot qubit with fault-tolerant control fidelity
- Author
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Veldhorst, M., Hwang, J. C. C., Yang, C. H., Leenstra, A. W., de Ronde, B., Dehollain, J. P., Muhonen, J. T., Hudson, F. E., Itoh, K. M., Morello, A., and Dzurak, A. S.
- Subjects
Condensed Matter - Mesoscale and Nanoscale Physics - Abstract
Exciting progress towards spin-based quantum computing has recently been made with qubits realized using nitrogen-vacancy (N-V) centers in diamond and phosphorus atoms in silicon, including the demonstration of long coherence times made possible by the presence of spin-free isotopes of carbon and silicon. However, despite promising single-atom nanotechnologies, there remain substantial challenges in coupling such qubits and addressing them individually. Conversely, lithographically defined quantum dots have an exchange coupling that can be precisely engineered, but strong coupling to noise has severely limited their dephasing times and control fidelities. Here we combine the best aspects of both spin qubit schemes and demonstrate a gate-addressable quantum dot qubit in isotopically engineered silicon with a control fidelity of 99.6%, obtained via Clifford based randomized benchmarking and consistent with that required for fault-tolerant quantum computing. This qubit has orders of magnitude improved coherence times compared with other quantum dot qubits, with T_2* = 120 mus and T_2 = 28 ms. By gate-voltage tuning of the electron g*-factor, we can Stark shift the electron spin resonance (ESR) frequency by more than 3000 times the 2.4 kHz ESR linewidth, providing a direct path to large-scale arrays of addressable high-fidelity qubits that are compatible with existing manufacturing technologies.
- Published
- 2014
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50. The Physics of the B Factories
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Bevan, A. J., Golob, B., Mannel, Th., Prell, S., Yabsley, B. D., Abe, K., Aihara, H., Anulli, F., Arnaud, N., Aushev, T., Beneke, M., Beringer, J., Bianchi, F., Bigi, I. I., Bona, M., Brambilla, N., rodzicka, J. B, Chang, P., Charles, M. J., Cheng, C. H., Cheng, H. -Y., Chistov, R., Colangelo, P., Coleman, J. P., Drutskoy, A., Druzhinin, V. P., Eidelman, S., Eigen, G., Eisner, A. M., Faccini, R., Flood, K. T ., Gambino, P., Gaz, A., Gradl, W., Hayashii, H., Higuchi, T., Hulsbergen, W. D., Hurth, T., Iijima, T., Itoh, R., Jackson, P. D., Kass, R., Kolomensky, Yu. G., Kou, E., Križan, P., Kronfeld, A., Kumano, S., Kwon, Y. J., Latham, T. E., Leith, D. W. G. S., Lüth, V., Martinez-Vidal, F., Meadows, B. T., Mussa, R., Nakao, M., Nishida, S., Ocariz, J., Olsen, S. L., Pakhlov, P., Pakhlova, G., Palano, A., Pich, A., Playfer, S., Poluektov, A., Porter, F. C., Robertson, S. H., Roney, J. M., Roodman, A., Sakai, Y., Schwanda, C., Schwartz, A. J., Seidl, R., Sekula, S. J., Steinhauser, M., Sumisawa, K., Swanson, E. S., Tackmann, F., Trabelsi, K., Uehara, S., Uno, S., van der Water, R., Vasseur, G., Verkerke, W., Waldi, R., Wang, M. Z., Wilson, F. F., Zupan, J., Zupanc, A., Adachi, I., Albert, J., Banerjee, Sw., Bellis, M., Ben-Haim, E., Biassoni, P., Cahn, R. N., Cartaro, C., Chauveau, J., Chen, C., Chiang, C. C., Cowan, R., Dalseno, J., Davier, M., Davies, C., Dingfelder, J. C., nard, B. Eche, Epifanov, D., Fulsom, B. G., Gabareen, A. M., Gary, J. W., Godang, R., Graham, M. T., Hafner, A., Hamilton, B., Hartmann, T., Hayasaka, K., Hearty, C., Iwasaki, Y., Khodjamirian, A., Kusaka, A., Kuzmin, A., Lafferty, G. D., Lazzaro, A., Li, J., Lindemann, D., Long, O., Lusiani, A., Marchiori, G., Martinelli, M., Miyabayashi, K., Mizuk, R., Mohanty, G. B., Muller, D. R., Nakazawa, H., Ongmongkolkul, P., Pacetti, S., Palombo, F., Pedlar, T. K., Piilonen, L. E., Pilloni, A., Poireau, V., Prothmann, K., Pulliam, T., Rama, M., Ratcliff, B. N., Roudeau, P., Schrenk, S., Schroeder, T., Schubert, K. R., Shen, C. P., Shwartz, B., Soffer, A., Solodov, E. P., Somov, A., Starič, M., Stracka, S., Telnov, A. V., Todyshev, K. Yu., Tsuboyama, T., Uglov, T., Vinokurova, A., Walsh, J. J., Watanabe, Y., Won, E., Wormser, G., Wright, D. H., Ye, S., Zhang, C. C., Abachi, S., Abashian, A., Abe, N., Abe, R., Abe, T., Abrams, G. S., Adam, I., Adamczyk, K., Adametz, A., Adye, T., Agarwal, A., Ahmed, H., Ahmed, M., Ahmed, S., Ahn, B. S., Ahn, H. S., Aitchison, I. J. R., Akai, K., Akar, S., Akatsu, M., Akemoto, M., Akhmetshin, R., Akre, R., Alam, M. S., Albert, J. N., Aleksan, R., Alexander, J. P., Alimonti, G., Allen, M. T., Allison, J., Allmendinger, T., Alsmiller, J. R. G., Altenburg, D., Alwyn, K. E., An, Q., Anderson, J., Andreassen, R., Andreotti, D., Andreotti, M., Andress, J. C., Angelini, C., Anipko, D., Anjomshoaa, A., Anthony, P. L., Antillon, E. A., Antonioli, E., Aoki, K., Arguin, J. 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T., De Mori, F., De Domenico, G., De Groot, N., De la Vaissière, C., de la Vaissière, Ch., de Lesquen, A., De Nardo, G., de Sangro, R., De Silva, A., DeBarger, S., Decker, F. J., Sanchez, P. del Amo, Del Buono, L., Del Gamba, V., del Re, D., Della Ricca, G., Denig, A. G., Derkach, D., Derrington, I. M., DeStaebler, H., Destree, J., Devmal, S., Dey, B., Di Girolamo, B., Di Marco, E., Dickopp, M., Dima, M. O., Dittrich, S., Dittongo, S., Dixon, P., Dneprovsky, L., Dohou, F., Doi, Y., Doležal, Z., Doll, D. A., Donald, M., Dong, L., Dong, L. Y., Dorfan, J., Dorigo, A., Dorsten, M. P., Dowd, R., Dowdell, J., Drásal, Z., Dragic, J., Drummond, B. W., Dubitzky, R. S., Dubois-Felsmann, G. P., Dubrovin, M. S., Duh, Y. C., Duh, Y. T., Dujmic, D., Dungel, W., Dunwoodie, W., Dutta, D., Dvoretskii, A., Dyce, N., Ebert, M., Eckhart, E. A., Ecklund, S., Eckmann, R., Eckstein, P., Edgar, C. L., Edwards, A. J., Egede, U., Eichenbaum, A. 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High Energy Physics - Experiment ,High Energy Physics - Phenomenology - Abstract
This work is on the Physics of the B Factories. Part A of this book contains a brief description of the SLAC and KEK B Factories as well as their detectors, BaBar and Belle, and data taking related issues. Part B discusses tools and methods used by the experiments in order to obtain results. The results themselves can be found in Part C. Please note that version 3 on the archive is the auxiliary version of the Physics of the B Factories book. This uses the notation alpha, beta, gamma for the angles of the Unitarity Triangle. The nominal version uses the notation phi_1, phi_2 and phi_3. Please cite this work as Eur. Phys. J. C74 (2014) 3026., Comment: 928 pages, version 3 (arXiv:1406.6311v3) corresponds to the alpha, beta, gamma version of the book, the other versions use the phi1, phi2, phi3 notation
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- 2014
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