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Integrated photonics has recently become a leading platform for the realization and processing of optical entangled quantum states in compact, robust and scalable chip formats, with applications in long-distance quantum-secured communication, quantum-accelerated information processing and nonclassical metrology. However, the quantum light sources developed so far have relied on external bulky excitation lasers, making them impractical prototype devices that are not reproducible, hindering their scalability and transfer out of the laboratory into real-world applications. Here we demonstrate a fully integrated quantum light source that overcomes these challenges through the integration of a laser cavity, a highly efficient tunable noise suppression filter (>55 dB) exploiting the Vernier effect, and a nonlinear microring for entangled photon-pair generation through spontaneous four-wave mixing. The hybrid quantum source employs an electrically pumped InP gain section and a Si3N4 low-loss microring filter system, and demonstrates high performance parameters, that is, pair emission over four resonant modes in the telecom band (bandwidth of ~1 THz) and a remarkable pair detection rate of ~620 Hz at a high coincidence-to-accidental ratio of ~80. The source directly creates high-dimensional frequency-bin entangled quantum states (qubits/qudits), as verified by quantum interference measurements with visibilities up to 96% (violating Bell’s inequality) and by density matrix reconstruction through state tomography, showing fidelities of up to 99%. Our approach, leveraging a hybrid photonic platform, enables scalable, commercially viable, low-cost, compact, lightweight and field-deployable entangled quantum sources, quintessential for practical, out-of-laboratory applications such as in quantum processors and quantum satellite communications systems.

Integrated mode-locked lasers are useful tools in microwave photonic applications as a local oscillator. In particular, hybrid integrated lasers could easily be integrated with passive processing circuits. In this Letter, we report on the self-mode-locking of a hybrid integrated laser comprising two indium phosphide gain sections and a silicon nitride feedback circuit that filters light using two ring resonators. The hybrid laser is shown to mode-lock and to have a mostly frequency-modulated field in the cavity using a stepped-heterodyne optical complex spectrum analysis. A mostly frequency modulated field output is good for high powers per line due to a more continuous emission, compared with mode-locked lasers using a saturable absorber; additionally, the filter limits the bandwidth of the comb, condensing the power to the fewer comb lines.

Recently, quantum advantage over classical computation has been claimed using photons [1] . To control photonic quantum computations such as Boson sampling, a non-universal approach on quantum computation, large-scale quantum processors are needed [2] , [3] . To realize scalable and robust photonic quantum processors integrated photonics is a key technology. In our approach we use the integrated waveguide platform based on silicon nitride [4] , due to its low intrinsic losses and technological maturity. The low losses result in a high fidelity of the quantum photonics processor which is mandatory for reliable quantum computation while maturity of the platform allows for scaling up of the dimensions of the processor. Here, we present a universal 12-mode quantum photonics processor which is the largest of its kind to date.

Photonic processors are pivotal for both quantum and classical information processing tasks using light. In particular, linear optical quantum information processing requires both large-scale and low-loss programmable photonic processors. In this paper, we report the demonstration of the largest universal quantum photonic processor to date: a low-loss 12-mode fully tunable linear interferometer with all-to-all mode coupling based on stoichiometric silicon nitride waveguides.

Hybrid integration of semiconductor optical amplifiers with frequency-selective feedback circuits, implemented using low-loss Si3N4 waveguides, enables robust chip-sized lasers with outstanding properties. Deploying ring resonators as a tunable feedback filter provides single-mode operation over a wide wavelength range. Moreover, these rings resonantly enhance the cavity length, which results in ultra-narrow intrinsic linewidth, as low as 40 Hz. Here, we present an overview on state-of-the-art developments regarding these lasers. We compare linewidth and tuning results for different feedback circuit configurations. Finally, we report on the first demonstration of a hybrid-integrated semiconductor laser that operates in the visible wavelength range.

Photonics integration is a key technology for realizing large-scale photonic quantum information processing. We demonstrate state-of-art reconfigurable photonic processors based on low-loss silicon nitride waveguide networks. We present the science behind such a processor, which consists of a large mesh of integrated reconfigurable Mach Zehnder interferometers. In this talk, we will present the newest results of the current generation of our programmable quantum photonic processors obtained by classical as well as quantum optical characterization. Furthermore, we show the challenges of scaling up quantum photonic processors and the range of potential applications of large-scale quantum information processing those will enable.

Photonics-based techniques spearhead the generation of high-frequency signals in the millimeter-and Terahertz wave, crucial for ultrabroadband mobile wireless link development. Photonic integration is enabling to provide the photonic approach with added advantages of energy-efficiency, flexibility and scalability, in addition to signal quality. We present an optical heterodyne system based on a novel dual laser module containing two InP-Si3N4 hybrid lasers with intracavity wavelength selective optical filters with output optical power per laser of up to 15 dBm (31 mW), wide wavelength tuning of about 60 nm, and narrow optical linewidth below 100 kHz. To the best of our knowledge, we present for the first time the continuous-wave generation of RF frequencies over a wide tuning range from C-band (4 GHz – 8-GHz) to W-band (75 GHz – 110 GHz) achieving record low RF electrical linewidth around 108 kHz and long-term drift < 12 MHz with two free-running lasers. This is the best beat-note linewidth obtained with such an integrated source in a free-runnning regime and with a wide tuning range ever reported.

We present a light source for coherent anti-Stokes Raman scattering (CARS) based on broadband spontaneous four-wave mixing, with the potential to be further integrated. By using 7 mm long silicon nitride waveguides, which offer tight mode confinement and a high nonlinear refractive index coefficient, broadband signal and idler pulses were generated with 4 nJ of input pulse energy. In comparison to fiber-based experiments, the input energy and the waveguide length were reduced by two orders of magnitude, respectively. The idler and residual pump pulses were used for CARS measurements, enabling chemically selective and label-free spectroscopy over the entire fingerprint region, with an ultrafast fiber-based pump source at 1033 nm wavelength. The presented simple light source paves the path towards cost-effective, integrated lab-on-a-chip CARS applications.

Silicon nitride waveguides offer a high nonlinear refractive index and tight mode confinement, ideal for efficient four-wave mixing (FWM) processes. We present a light source for coherent anti-Stokes Raman scattering (CARS), with the potential to be set up as an all-integrated device, based on spontaneous FWM in silicon nitride waveguides with only a single ultrafast fiber-based pump source at 1030 nm wavelength. Broadband signal and idler pulses are generated with only 5 nJ input pulse energy, such that the idler and residual pump pulses can be used for CARS measurements, enabling chemically-selective and label-free imaging over the entire fingerprint region.

Tunable semiconductor lasers with a narrow linewidth have found a wide range of important applications, reaching from coherent communications, remote optical sensing such as Lidar to arising applications such as microwave photonics (MWP). Especially, integrated microwave photonics [1,2] aims to achieve RF-to-RF signal processing in the optical domain with a small footprint while offering wide bandwidths. Recently, we developed a hybrid integrated photonic platform [3] based on active InP components such as gain sections, modulators, and detectors with passive silicon nitride-based TriPleX enabling low loss optical signal processing due to its low propagation losses (< 0.1 dB/cm). The combination of these two platforms enables fully integrated RF-to-RF analog photonic links (APL). The link gain of an APL quadratically depends on the sensitivity of the modulator, responsivity of the photodetector (PD) as well as the optical power at the receiving PD [2]. Therefore, to achieve an efficient APL with a high link gain an optical input power of typically more than 20 dBm is needed. Furthermore, high optical powers can keep the noise figure at a minimum by making the use of additional amplifiers obsolete. However, so far current hybrid as well as heterogeneously integrated lasers lack sufficient optical power to achieve such efficient APLs. Here, we present, to the best of our knowledge, the first hybrid integrated laser consisting of more than one InP gain sections sharing a common laser mirror. The resulting on-chip power of 20.7 dBm using two gain sections at a pump current of twice 300 mA is the highest optical power of a hybrid integrated laser to date. Furthermore, the laser shows a low intrinsic linewidth of 320 Hz as well as a low relative intensity noise ( The scheme and a photograph of the dual-gain section hybrid integrated laser is shown in Fig.1 (a) and (b), respectively. The laser comprises of two InP reflective semiconductor optical amplifier (RSOA) chips and a low-loss TriPleX frequency selective mirror chip. The frequency selective mirror is based on a well-known principle of Vernier mirror with two micro-resonators of slightly different length and, hence, free-spectral ranges of 208 GHz and 215 GHz. To achieve a higher optical output power the mirror chip is coupled to two individual InP RSOAs with a length of 700 μm instead of one [4]. The coupling losses from the InP RSOAs to TriPleX laser cavity are estimated to be about 1 dB. Each of the RSOAs has an individual electrical connection to apply a pump current. On the TriPleX chip, thermo-optic tuners are used to set the frequency selective mirror, to control the phases of the RSOAs within the cavity, two tunable Mach-Zehnder couplers are used to combine both output coupling of the cavity and the power in the output waveguide. The output waveguides are coupled to a fiber array with standard polarization maintaining fibers with a coupling loss of 0.5 dB.

An overview of the most recent developments and improvements to the low-loss TriPleX Si3N4 waveguide technology is presented in this paper. The TriPleX platform provides a suite of waveguide geometries (box, double stripe, symmetric single stripe, and asymmetric double stripe) that can be combined to design complex functional circuits, but more important are manufactured in a single monolithic process flow to create a compact photonic integrated circuit. All functionalities of the integrated circuit are constructed using standard basic building blocks, namely straight and bent waveguides, splitters/combiners and couplers, spot size converters, and phase tuning elements. The basic functionalities that have been realized are: ring resonators and Mach–Zehnder interferometer filters, tunable delay elements, and waveguide switches. Combination of these basic functionalities evolves into more complex functions such as higher order filters, beamforming networks, and fully programmable architectures. Introduction of the active InP chip platform in a combination with the TriPleX will introduce light generation, modulation, and detection to the low-loss platform. This hybrid integration strategy enables fabrication of tunable lasers, fully integrated filters, and optical beamforming networks.

We demonstrate supercontinuum generation in stoichiometric silicon nitride (Sisub3/subNsub4/subin SiOsub2/sub) integrated optical waveguides, pumped at telecommunication wavelengths. The pump laser is a mode-locked erbium fiber laser at a wavelength of 1.56 µm with a pulse duration of 120 fs. With a waveguide-internal pulse energy of 1.4 nJ and a waveguide with 1.0 µm × 0.9 µm cross section, designed for anomalous dispersion across the 1500 nm telecommunication range, the output spectrum extends from the visible, at around 526 nm, up to the mid-infrared, at least to 2.6 µm, the instrumental limit of our detection. This output spans more than 2.2 octaves (454 THz at the -30 dB level). The measured output spectra agree well with theoretical modeling based on the generalized nonlinear Schrödinger equation. The infrared part of the supercontinuum spectra shifts progressively towards the mid-infrared, well beyond 2.6 µm, by increasing the width of the waveguides.

Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser., 25 pages, 16 figures

In this paper a microwave photonic broadband true time delay (TTD) continuously tuneable beamformer module for phased array antenna applications is presented. This microwave photonics beamformer is based on the hybrid integration of Indium Phosphide and Silicon Nitride chips. This paper features results from the latest transmit microwave photonic beamformer based on a completely integrated photonic assembly interface.

We present the first hybrid integrated laser with two gain sections coupled to one tunable cavity. The resulting laser has a output power of up to 85 mW and an intrinsic linewidth of 320 Hz.

We describe the first demonstration and characterization of an optically integrated InP-Si3 N4 hybrid laser. The laser is formed by integration of an InP-based reflective semiconductor optical amplifier with a InP-Si3 N4 based feedback waveguide circuit. The circuit comprises a frequency selective and tunable Vernier mirror composed of two microring resonators with slightly different radii. A wide tuning range of more than 43 nm is achieved via the thermo-optic effect. The typical side mode suppression ratio is 35 dB. The narrowest linewidth achieved is about 90 kHz, and the relative intensity noise is less than -135 dBc/Hz.

In this paper, we present the first results on a fully integrated optical beamforming module based on hybrid integration of TriPleX and InP. The Furthermore, we discuss the implementation of various beamforming architecture used in two European H2020 research projects.

Integrated microwave photonics (IMWP) is a novel field in which the fast-paced progress in integrated, on-chip, optics is harnessed to provide breakthrough performances in well-established microwave photonic processing functions, which are traditionally realized using discrete optoelectronic components. A field where IMWP can have a strong impact is the one of Antenna Arrays for 5G networks. Such arrays offer a number of attractive characteristics, including a conformal array profile, electronic beamforming (beam shaping and beam steering), interference nulling and the capability to generate multiple antenna beams simultaneously. In many cases, however, the performance of a phased array is limited by the characteristics of the beamforming network (BFN) used. It is generally desired to realize beamformers with broad instantaneous bandwidth, continuous amplitude, and delay tunability while, at the same time, capable of feeding large arrays. This, however, is very challenging to achieve using only electronics. For this reason, in the last few years, an increasing amount of research has been directed to beamforming in the optical domain using, integrated microwave photonics solutions. Besides antenna array applications, opportunities for cost effective use of IMWP in switched delay lines has become feasible due to the continuous improvement of optical chips, particularly the achieved record-low propagation losses in Si 3 N 4 /SiO 2 -based-chips combined with the high integration density.

The next generation of applications in integrated microwave photonics[1], such as optical beam forming networks or programmable photonic processors[2], requires complex chip designs with hundreds or even thousands of actuators and low propagation losses. While passive material platforms such as silicon nitride possess ultra-low losses in the telecommunication C-Band, today their on-chip phase actuation, however, is solely based on thermo-optic tuners and, hence, suffering from huge power dissipation.

Integrated optical waveguides based on stoichiometric silicon nitride (SÌ3N4) grown with low pressure chemical vapor deposition (LPCVD) are of high importance for applications, e.g., in microwave photonics [1] and quantum optics [2] due to their record-low loss and broad spectral transparency range. The material's third-order nonlinearity and wide transparency have enabled efficient nonlinear conversion, specifically, supercontinuum generation with record-wide bandwidth [3, 4] and are promising for all-optical switching [5].

We report the observation of second-harmonic generation in stoichiometric silicon nitride waveguides grown via low-pressure chemical vapour deposition. Quasi-rectangular waveguides with a large cross section were used, with a height of 1 {\mu}m and various different widths, from 0.6 to 1.2 {\mu}m, and with various lengths from 22 to 74 mm. Using a mode-locked laser delivering 6-ps pulses at 1064 nm wavelength with a repetition rate of 20 MHz, 15% of the incoming power was coupled through the waveguide, making maximum average powers of up to 15 mW available in the waveguide. Second-harmonic output was observed with a delay of minutes to several hours after the initial turn-on of pump radiation, showing a fast growth rate between 10$^{-4}$ to 10$^{-2}$ s$^{-1}$, with the shortest delay and highest growth rate at the highest input power. After this first, initial build-up, the second-harmonic became generated instantly with each new turn-on of the pump laser power. Phase matching was found to be present independent of the used waveguide width, although the latter changes the fundamental and second-harmonic phase velocities. We address the presence of a second-order nonlinearity and phase matching, involving an initial, power-dependent build-up, to the coherent photogalvanic effect. The effect, via the third-order nonlinearity and multiphoton absorption leads to a spatially patterned charge separation, which generates a spatially periodic, semi-permanent, DC-field-induced second-order susceptibility with a period that is appropriate for quasi-phase matching. The maximum measured second-harmonic conversion efficiency amounts to 0.4% in a waveguide with 0.9 x 1 {\mu}m$^2$ cross section and 36 mm length, corresponding to 53 {\mu}W at 532 nm with 13 mW of IR input coupled into the waveguide. The according $\chi^{(2)}$ amounts to 3.7 pm/V, as retrieved from the measured conversion efficiency., Comment: 20 pages, 10 figures

We present the first demonstration of an optically integrated InP-Si 3 N 4 hybrid laser. The feasibility and viability of facet-to-facet, butt-coupled integration is proven by single-frequency operation, tunable across a wide range of 43 nm (including the entire telecom C-band) with sub-MHz spectral bandwidth.

We demonstrate the generation of ultra-broadband supercontinua in Si 3 N 4 waveguides at a pump wavelength of 1560nm. The supercontinuum extends to beyond 2.6 μm wavelength in the infrared and has a spectral width of more then 453 THz.

High spectral resolution coherent anti-Stokes Raman scattering (CARS) spectroscopy and microscopy are demonstrated with femtosecond laser systems. We perform optimal chirping in glass fibers and demonstrate a spectral resolution enhancement to better than 26 cm−1, which is limited by the bandwidth of the measured resonances. Considering the convolution with the resonance bandwidth this corresponds to a spectral resolution of approximately 2.5 cm−1, which is an enhancement by a factor of 165 with respect to the use of bandwidth-limited pulses. In microscopic imaging, a water background suppression of 81.5% is achieved.

We present detailed investigations of a femtosecond green-pumped optical parametric oscillator (OPO) based on lithium triborate. As pump source, a frequency-doubled Yb-fiber laser-amplifier system is used. The OPO generates signal pulses tunable over a spectral range from 780 to 940 nm and idler pulses tunable from 1630 to 1190 nm. More than 250 mW are generated in the signal beam and more than 300 mW in the idler beam. Without dispersion compensation chirped signal pulses with a pulse duration between 100 and 250 fs are measured. Using this system for coherent anti-Stokes Raman scattering spectroscopy, vibrational resonances between 1110 and 6760 cm−1 can be excited. Due to the chirped pulses, a spectral resolution of 100 cm−1 is achieved, which is 2.5 times higher compared to an excitation with time-bandwidth limited pulses.

We demonstrate the potential of all-optical switches in integrated waveguides based on intermodal cross-phase modulation between transverse modes. For this purpose, the differential phase between two transverse modes of a probe beam was altered by cross-phase modulation with a control beam propagating only in the fundamental mode. A switching behavior was accomplished by spatially filtering the resulting multimode interference of the probe modes, which changed depending on the control beam power. All-optical switching with a contrast of 82% at 1280 nm over a frequency range of 4.4 THz at 1.6 nJ was achieved, representing an improvement of the product of necessary power and waveguide length by a factor of nearly 2000 compared to similar experiments in graded-index fibers. Additionally, we show that the center wavelength of the switch can be tailored by changing the cross-sectional geometry of the waveguide or the involved probe modes.

We demonstrate the potential of birefringence-based, all-optical, ultrafast conversion between the transverse modes in integrated optical waveguides by modelling the conversion process by numerically solving the multi-mode coupled nonlinear Schroedinger equations. The observed conversion is induced by a control beam and due to the Kerr effect, resulting in a transient index grating which coherently scatters probe light from one transverse waveguide mode into another. We introduce birefringent phase matching to enable efficient all-optically induced mode conversion at different wavelengths of the control and probe beam. It is shown that tailoring the waveguide geometry can be exploited to explicitly minimize intermodal group delay as well as to maximize the nonlinear coefficient, under the constraint of a phase matching condition. The waveguide geometries investigated here, allow for mode conversion with over two orders of magnitude reduced control pulse energy compared to previous schemes and thereby promise nonlinear mode switching exceeding efficiencies of 90% at switching energies below 1 nJ.

We report ultra-broadband supercontinuum generation in high-confinement Si3N4 integrated optical waveguides. The spectrum extends through the visible (from 470 nm) to the infrared spectral range (2130 nm) comprising a spectral bandwidth wider than 495 THz, which is the widest supercontinuum spectrum generated on a chip.

In this thesis, we investigated nonlinear frequency conversion of optical wavelengths using integrated silicon nitride (Si3N4) waveguides. Two nonlinear conversion schemes were considered: seeded four-wave mixing and supercontinuum generation. The first—seeded four-wave mixing—is investigated by a numerical study and proposed as light source for coherent anti-Stokes Raman scattering (CARS). The compatibility of the silicon nitride-based integrated waveguide with microfluidic channels enables potential applications for on-chip CARS spectroscopy. Both four-wave mixing and supercontinuum generation require waveguides with a large core area to obtain the dispersion required for phase-matched nonlinear frequency conversion. A novel fabrication technique for manufacturing large-core Si3N4 waveguides was investigated. The main advantage of this novel technique is the ability to manufacture crack-free Si3N4 waveguides with sufficient thickness to phase match nonlinear optical processes, while simultaneously realizing a high device yield. To demonstrate that such waveguides can be dispersion engineered and, i.e., allow for phase matching for nonlinear frequency conversion, we experimentally investigated supercontinuum generation in these waveguides using two different pump wavelengths. For a pump wavelength of 1560 nm, the waveguide was dispersion engineered to have a zero-dispersion wavelength just above 1600 nm, such that the pump wavelength experiences anomalous dispersion. The generated supercontinuum spanned more than 700 nm (at -30 dB), limited by the available pump energy. Theoretical modeling showed an exceptionally good agreement with the measured spectrum, and that an octave-spanning supercontinuum is possible if the pump energy is increased. The pulse-to-pulse coherence was calculated for this case and we found that the supercontinuum was fully coherent over its bandwidth (-30 dB), showing that Si3N4 waveguides could be used to generate an optical frequency comb. For a pump wavelength of 1064 nm, the waveguide was designed to have a zero-dispersion wavelength just below 1000 nm to have, again, anomalous dispersion for the pump wavelength. At this pump wavelength, the generated supercontinuum spanned an ultrabroad-bandwidth of nearly 500 THz covering nearly the whole transparency window of Si3N4/SiO2 waveguides.

Coherent anti-Stokes Raman scattering (CARS) offers label-free detection with chemical selectivity. In order to achieve spectral and therefore chemical resolution two synchronized narrowband pulses have to be provided by an appropriate light source. The often used complex laser systems as well as the more recently introduced all- fiber approaches based on seeded four-wave mixing (FWM) all lack the compatibility with integrated photonics. Here, we present theoretical investigations of a CARS light source based on silicon nitride waveguides, which is compatible, for instance, with integrated microfluidic channels and integrated light sources and therefore is of great interest for analyzing CARS spectra in a lab-on-a-chip setup. Furthermore, the required laser intensities are found to be reduced by one order of magnitude based on the higher efficiency of FWM in silicon nitride waveguides.

We present a theoretical investigation of an integrated nonlinear light source for coherent anti-Stokes Raman scattering (CARS) based on silicon nitride waveguides. Wavelength tunable and temporally synchronized signal and idler pulses are obtained by using seeded four-wave mixing. We find that the calculated input pump power needed for nonlinear wavelength generation is more than one order of magnitude lower than in previously reported approaches based on optical fibers. The tuning range of the wavelength conversion was calculated to be 1418 nm to 1518 nm (idler) and 788 nm to 857 nm (signal), which corresponds to a coverage of vibrational transitions from 2350 cm$^{-1}$ to 2810 cm$^{-1}$. A maximum conversion efficiency of 19.1% at a peak pump power of 300 W was obtained., Comment: 8 pages

The first green-pumped femtosecond optical parametric oscillator based on lithium triborate is presented. Up to 350 mW at signal (775 to 940 nm) and 300 mW at idler wavelength (1190 to 1630 nm) are generated.

In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm., 10 pages, 4 figures

We present a light source for coherent anti-Stokes Raman scattering, with the potential to be set up as an all-integrated device, based on spontaneous FWM in silicon nitride waveguides with only a single ultrafast pump source at 1030 nm wavelength.

For a compact Raman microscopy setup stimulated four-wave mixing in silicon nitride waveguides was used as a light source, driven by an ultrafast low-energy Ytterbium-fiber laser and being tuned via the narrowband low-power continuous-wave seed source.

In this work, we demonstrate the first stress-optic modulator in a silicon nitride-based waveguide platform (TriPleX) in the telecommunication C-band. In our stress-optic phase modulator the refractive index of the waveguiding materials is controlled by the stress-optic effect induced by actuating a 2 μm thick PZT layer on top of the TriPleX waveguide geometry. The efficiency of the modulator is optimized by, amongst others, focusing the applied stress in the waveguide core region through a local increase of the top cladding. Using a Mach-Zehnder interferometer, we measured a half-wave voltage, Vπ, at 34 V at a wavelength of 1550 nm using a modulator with a total length of 14.8 mm. The measured static power consumption of our stress-optic modulator is in the μW-region as it is only determined by small leakage currents (< 0.1 μA), while the dynamic power consumption at a rise time of 1 ms (1 kHz excitation) is less than 4 mW per modulator. The stress optical modulator goes with an excess loss of 0.01 dB per modulator only. This is in line with the typical low loss characteristics of TriPleX waveguides, being < 0.1 dB/cm at a wavelength of 1550 nm. These specifications make stress-optic modulators an excellent choice for next generation optical beam forming networks with a large number of actuators in silicon photonics in general and in the TriPleX platform in particular.