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Symmetry breaking in topological matter has become in recent years a key concept in condensed matter physics to unveil novel electronic states. In this work, we predict that broken inversion symmetry and strong spin-orbit coupling in trigonal PtBi 2 lead to a type-I Weyl semimetal band structure. Transport measurements show an unusually robust low dimensional superconductivity in thin exfoliated flakes up to 126 nm in thickness (with T c ∼ 275-400 mK), which constitutes the first report and study of unambiguous superconductivity in a type-I Weyl semimetal. Remarkably, a Berezinskii-Kosterlitz-Thouless transition with T BKT ∼ 310 mK is revealed in up to 60 nm thick flakes, which is nearly an order of magnitude thicker than the rare examples of two-dimensional superconductors exhibiting such a transition. This makes PtBi 2 an ideal platform to study low dimensional and unconventional superconductivity in topological semimetals.

A method is presented to use atomic force microscopy to measure the cleavage energy of van der Waals materials and similar quasi-two-dimensional materials. The cleavage energy of graphite is measured to be 0.36 J/m 2 , in good agreement with literature data. The same method yields a cleavage energy of 0.6 J/m 2 for MoS 2 as a representative of the dichalcogenides. In the case of the weak topological insulator Bi 14 Rh 3 I 9 no cleavage energy is obtained, although cleavage is successful with an adapted approach. The cleavage energies of these materials are evaluated by means of density-functional calculations and literature data. This further validates the presented method and sets an upper limit of about 0.7 J/m 2 to the cleavage energy that can be measured by the present setup. In addition, this method can be used as a tool for manipulating exfoliated flakes, prior to or after contacting, which may open a new route for the fabrication of nanostructures.

The magnetic properties of the van der Waals magnetic topological insulators MnBi_{2}Te_{4} and MnBi_{4}Te_{7} are investigated by magnetotransport measurements. We evidence that the relative strength of the interlayer exchange coupling J to the uniaxial anisotropy K controls a transition from an A-type antiferromagnetic order to a ferromagneticlike metamagnetic state. A bilayer Stoner-Wohlfarth model allows us to describe this evolution, as well as the typical angular dependence of specific signatures, such as the spin-flop transition of the uniaxial antiferromagnet and the switching field of the metamagnet.

Disorder remains a key limitation in the search for robust signatures of topological superconductivity in condensed matter. Whereas clean semiconducting quantum wires gave promising results discussed in terms of Majorana bound states, disorder makes the interpretation more complex. Quantum wires of 3D topological insulators offer a serious alternative due to their perfectly-transmitted mode. An important aspect to consider is the mixing of quasi-1D surface modes due to the strong degree of disorder typical for such materials. Here, we reveal that the energy broadening γ of such modes is much smaller than their energy spacing Δ, an unusual result for highly-disordered mesoscopic nanostructures. This is evidenced by non-universal conductance fluctuations in highly-doped and disordered Bi2Se3 and Bi 2 Te 3 nanowires. Theory shows that such a unique behavior is specific to spin-helical Dirac fermions with strong quantum confinement, which retain ballistic properties over an unusually large energy scale due to their spin texture. Our result confirms their potential to investigate topological superconductivity without ambiguity despite strong disorder.

The transport length l tr and the mean free path l e are determined for bulk and surface states in a Bi 2 Se 3 nanoribbon by quantum transport and transconductance measurements. We show that the anisotropic scattering of spin-helical Dirac fermions results in a strong enhancement of l tr (≈ 200 nm) and of the related mobility μ tr (≈ 4000 cm 2 V -1 s -1 ), which confirms theoretical predictions.1 Despite strong disorder, the long-range nature of the scattering potential gives a large ratio l tr /l e ≈ 8, likely limited by bulk/surface coupling. This suggests that the spin-flip length l sf ≈ l tr could reach the micron size in materials with a reduced bulk doping and paves the way for building functionalized spintronic and ballistic electronic devices out of disordered 3D topological insulators.

Shubnikov-de Haas oscillations were studied under high magnetic field in Bi2Se3 nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 × 10(19) cm(-3) to 6 × 10(17) cm(-3). The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.

Quantum coherent transport of surface states in a mesoscopic nanowire of the three-dimensional topological insulator Bi(2}Se(3) is studied in the weak-disorder limit. At very low temperatures, many harmonics are evidenced in the Fourier transform of Aharonov-Bohm oscillations, revealing the long phase coherence length of spin-chiral Dirac fermions. Remarkably, from their exponential temperature dependence, we infer an unusual 1/T power law for the phase coherence length L(φ)(T). This decoherence is typical for quasiballistic fermions weakly coupled to their environment.

The discovery of two-dimensional electron gases at the heterointerface between two insulating perovskite-type oxides, such as LaAlO(3) and SrTiO(3), provides opportunities for a new generation of all-oxide electronic devices. Key challenges remain for achieving interfacial electron mobilities much beyond the current value of approximately 1,000 cm(2) V(-1) s(-1) (at low temperatures). Here we create a new type of two-dimensional electron gas at the heterointerface between SrTiO(3) and a spinel γ-Al(2)O(3) epitaxial film with compatible oxygen ions sublattices. Electron mobilities more than one order of magnitude higher than those of hitherto-investigated perovskite-type interfaces are obtained. The spinel/perovskite two-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface. Our findings pave the way for studies of mesoscopic physics with complex oxides and design of high-mobility all-oxide electronic devices.

We report on an Hanbury Brown-Twiss experiment probing the statistics of microwave photons emitted by a tunnel junction in the shot-noise regime at low temperature. By measuring the cross correlation of the fluctuations of the occupation numbers of the photon modes of both detection branches, we show that while the statistics of electrons is Poissonian, the photons obey chaotic statistics. This is observed even for low photon occupation number when the voltage across the junction is close to hν/e.

Doped catalyst-free GaAs nanowires have been grown by molecular beam epitaxy with the gallium-assisted method. The spatial dependence of the dopant concentration and resistivity have been measured by Raman spectroscopy and four point electrical measurements. Along with theoretical considerations, the doping mechanisms have been revealed. Two competing mechanisms have been revealed: dopant incorporation from the side facets and from the gallium droplet. In the latter incorporation path, doping compensation seems to play an important role in the effective dopant concentration. Hole concentrations of at least 2.4 x 10(18) cm(-3) have been achieved, which to our knowledge is the largest p doping range obtained up to date. This work opens the avenue for the use of doped GaAs nanowires in advanced applications and in mesoscopic physics experiments.

Mesoscopic transport measurements reveal a large effective phase coherence length in epitaxial GaMnAs ferromagnets, contrary to usual 3d-metal ferromagnets. Universal conductance fluctuations of single nanowires are compared for epilayers with a tailored anisotropy. At large magnetic fields, quantum interferences are due to structural disorder only, and an unusual behavior related to hole-induced ferromagnetism is evidenced, for both quantum interferences and decoherence. At small magnetic fields, phase coherence is shown to persist down to zero field, even in presence of magnons, and an additional spin disorder contribution to quantum interferences is observed under domain walls nucleation.